公开(公告)号：KR1020130096336A

公开(公告)日：2013-08-30

申请号：KR1020120016203

申请日：2012-02-17

Applicant: 엘지이노텍 주식회사

Inventor： 한대섭 ,  문용태 ,  박승환

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device is provided to improve light emitting efficiency by relieving the stress between a first conductive semiconductor layer and an active layer. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer (210), an active layer (230), and a second conductive semiconductor layer (240). An electron injection layer (220) is located between the first conductive semiconductor layer and the active layer and includes In. The active layer includes a well layer and a barrier layer which are alternately located. The electron injection layer includes multiple sub layers. An energy band gap of the sub layer is wider than an energy band gap of the well layer. The multiple sub layers include a sub well layer and a sub barrier layer which are alternately located.

Abstract translation: 目的：通过减轻第一导电半导体层和有源层之间的应力来提供发光器件以提高发光效率。 构成：发光结构包括第一导电半导体层（210），有源层（230）和第二导电半导体层（240）。 电子注入层（220）位于第一导电半导体层和有源层之间，并包括In。 活性层包括交替位置的阱层和势垒层。 电子注入层包括多个子层。 子层的能带隙比阱层的能带隙宽。 多个子层包括交替位置的子阱层和子阻挡层。

公开(公告)号：KR1020130020863A

公开(公告)日：2013-03-04

申请号：KR1020110082865

申请日：2011-08-19

Applicant: 엘지이노텍 주식회사

Inventor： 원종학 ,  정종필 ,  김종국 ,  문용태

IPC: H01L33/04 ,  H01L33/14

CPC classification number: H01L33/06 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device is provided to increase the probability of hole tunneling by using a thin barrier layer which is adjacent to a carrier injection layer. CONSTITUTION: A first active layer(120) is arranged on a semiconductor layer. The first active layer includes a first well layer. A second active layer(130) is arranged on the first well layer. The second active layer includes a second well layer which is thinner than the first well layer. A first layer and a second layer are laminated on a carrier injection layer(140).

Abstract translation: 目的：提供一种发光器件，以通过使用与载流子注入层相邻的薄的阻挡层来增加空穴隧穿的可能性。 构成：第一有源层（120）被布置在半导体层上。 第一活性层包括第一阱层。 第二活性层（130）布置在第一阱层上。 第二有源层包括比第一阱层薄的第二阱层。 第一层和第二层层压在载体注入层（140）上。

公开(公告)号：KR1020120018585A

公开(公告)日：2012-03-05

申请号：KR1020100081517

申请日：2010-08-23

Applicant: 엘지이노텍 주식회사

Inventor： 이정식 ,  한대섭 ,  문용태

IPC: H01L33/06 ,  H01L33/02 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/32

Abstract: PURPOSE: A light emitting device is provided to suppress the lattice mismatch and coefficient of thermal expansion of a material by forming a buffer layer between a nitride semiconductor and a substrate. CONSTITUTION: A first conductive semiconductor layer(120) is formed on a substrate(100). An active layer(130) of a multiple quantum well is formed on the first conductive semiconductor layer. A quantum well includes at least two quantum wells comprised of InGaN between the quantum wells. A second conductive semiconductor layer(140) is formed on the active layer. A first electrode(150) and a second electrode(160) are formed in the first conductive semiconductor layer and the second conductive semiconductor layer respectively.

Abstract translation: 目的：提供一种发光器件，通过在氮化物半导体和衬底之间形成缓冲层来抑制材料的晶格失配和热膨胀系数。 构成：在基板（100）上形成第一导电半导体层（120）。 在第一导电半导体层上形成多量子阱的有源层（130）。 量子阱包括在量子阱之间由InGaN组成的至少两个量子阱。 在有源层上形成第二导电半导体层（140）。 第一电极（150）和第二电极（160）分别形成在第一导电半导体层和第二导电半导体层中。

公开(公告)号：KR1020110128711A

公开(公告)日：2011-11-30

申请号：KR1020100059562

申请日：2010-06-23

Applicant: 엘지이노텍 주식회사

Inventor： 문용태 ,  이정식 ,  박중서 ,  권호기 ,  박승환

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/48

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/36 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device and a light emitting device package are provided to improve the self luminous efficiency of a quantum well layer by reducing compressive stress which is applied to a quantum-well layer in a light emitting layer. CONSTITUTION: A light emitting device comprises a first conductive semiconductor layer and a second conductive semiconductor layer(50). The light emitting layer is formed on the first conductive semiconductor layer. The second conductive semiconductor layer is formed on the light emitting layer. The light emitting layer includes a quantum well layer(33) and a quantum barrier layer(31). The face direction lattice constant of the first conductive semiconductor layer and the second conductive semiconductor layer is bigger than that of the quantum barrier layer and is smaller than that of the quantum well layer.

Abstract translation: 目的：提供发光器件和发光器件封装，以通过降低施加到发光层中的量子阱层的压缩应力来提高量子阱层的自发光效率。 构成：发光器件包括第一导电半导体层和第二导电半导体层（50）。 发光层形成在第一导电半导体层上。 第二导电半导体层形成在发光层上。 发光层包括量子阱层（33）和量子势垒层（31）。 第一导电半导体层和第二导电半导体层的面向晶格常数大于量子势垒层的面方向晶格常数，并且小于量子阱层的面方向晶格常数。

公开(公告)号：KR101064025B1

公开(公告)日：2011-09-08

申请号：KR1020100066396

申请日：2010-07-09

Applicant: 엘지이노텍 주식회사

Inventor： 문용태 ,  이정식 ,  한대섭

IPC: H01L33/08 ,  H01L33/06

CPC classification number: H01L33/08 ,  F21K9/00 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/14 ,  H01L33/48 ,  H01L2924/12041

Abstract: 실시예는 발광소자, 발광소자 패키지 및 조명시스템에 관한 것이다.
실시예에 따른 발광소자는 제1 도전형 반도체층, 제2 도전형 반도체층 및 상기 제1 도전형 반도체층과 상기 제2 도전형 반도체층 사이에 발광층을 포함하고, 상기 발광층은, 상기 제2 도전형 반도체층에 인접한 제1 발광층; 상기 제1 도전형 반도체층에 인접한 제2 발광층; 및 상기 제1 발광층과 상기 제2 발광층 사이에 게이트 양자벽;을 포함한다.

公开(公告)号：KR100969127B1

公开(公告)日：2010-07-09

申请号：KR1020100014441

申请日：2010-02-18

Applicant: 엘지이노텍 주식회사

Inventor： 문용태 ,  임정순 ,  이정식

IPC: H01L33/02

CPC classification number: H01L33/007 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PURPOSE: A light emitting device, a manufacturing method thereof, and a light emitting device package thereof are provided to improve luminous efficiency and reliability by using a substrate which has a light transmissive property which has a low absorption rate in a range from the visible wavelength region to the ultraviolet wavelength region. CONSTITUTION: A substrate(105) comprises β-Ga2O5. A light emitting structure(110) comprises a first conductive semiconductor layer(112), an active layer(114), and a second conductive semiconductor layer(116) on the substrate. An electrode(120) is included on the light emitting structure. A porous film(108) is included in the lateral area of the substrate. The porous film has a different crystalline structure and is made of the same material as the substrate. The lateral side of the substrate has a curved surface.

Abstract translation: 目的：提供一种发光器件及其制造方法及其发光器件封装，以通过使用具有从可见波长的范围内具有低吸收率的透光性的衬底来提高发光效率和可靠性 区域到紫外线波长区域。 构成：基底（105）包含β-Ga 2 O 5。 发光结构（110）包括在衬底上的第一导电半导体层（112），有源层（114）和第二导电半导体层（116）。 在发光结构上包括电极（120）。 多孔膜（108）包含在基板的横向区域中。 多孔膜具有不同的晶体结构，并且由与基底相同的材料制成。 基板的侧面具有弯曲表面。

公开(公告)号：KR1020080010134A

公开(公告)日：2008-01-30

申请号：KR1020060070212

申请日：2006-07-26

Applicant: 엘지전자 주식회사 ,  엘지이노텍 주식회사

Inventor： 문용태

IPC: H01L33/12

Abstract: A nitride based light emitting device is provided to highly improve inner quantum efficiency by improving the band structure of a quantum well layer through a stress accommodation layer and to improve the characteristics of light by uniformly distributing indium. A nitride based light emitting device includes a light emitting layer(20), and a stress accommodation layer(40). The light emitting layer has a quantum well layer(21) and a quantum barrier layer(22). The stress accommodation layer is located on at least one side of the quantum well layer of the light emitting layers. The quantum barrier layer, the stress accommodation layer, and the quantum well layer are sequentially laminated so that the stress accommodation layer accommodates the stress applied to the quantum well layer.

Abstract translation: 提供了一种基于氮化物的发光器件，通过通过应力调节层改善量子阱层的带结构并通过均匀分布铟来改善光的特性来大大提高内量子效率。 氮化物系发光器件包括发光层（20）和应力调节层（40）。 发光层具有量子阱层（21）和量子势垒层（22）。 应力调节层位于发光层的量子阱层的至少一侧。 量子势垒层，应力调节层和量子阱层依次层叠，使得应力容纳层适应施加到量子阱层的应力。

公开(公告)号：KR1020070082744A

公开(公告)日：2007-08-22

申请号：KR1020060015756

申请日：2006-02-17

Applicant: 엘지전자 주식회사 ,  엘지이노텍 주식회사

Inventor： 문용태 ,  김성우

IPC: H01L33/14 ,  H01L33/22

Abstract: A method for fabricating a high-bright light emitting device is provided to minimize crystal defects transferred form the surface of a second GaN layer to the inside of the second GaN layer while changing the chemical composition of the surface of a GaN layer in forming a conventional MgN layer by forming an InMgN layer instead of the MgN layer. A first GaN layer(110), an active layer(120) and a second GaN layer(130) are sequentially formed on a substrate(100). A porous layer is formed on the second GaN layer, exposing the upper region of the second GaN layer through holes. Second GaN protrusions(150) are formed in the upper region of the second GaN layer exposed through the holes of the porous layer. The porous layer on the second GaN layer is removed to expose the upper part of the second GaN layer except the region where the second GaN protrusions are formed. The upper part of the exposed second GaN layer and the second GaN protrusions are covered with an electrode(160). The first GaN layer can be a GaN layer doped with n-type or p-type impurities. The second GaN layer can be a GaN layer doped with impurities of an opposite conductivity type to that of the first GaN layer.

Abstract translation: 提供一种制造高亮度发光器件的方法，用于将形成第二GaN层的表面的晶体缺陷的最小化最小化到第二GaN层的内部，同时在形成常规的GaN层的同时改变GaN层表面的化学组成 MgN层，形成InMgN层而不是MgN层。 在衬底（100）上依次形成第一GaN层（110），有源层（120）和第二GaN层（130）。 在第二GaN层上形成多孔层，通过孔露出第二GaN层的上部区域。 在通过多孔层的孔露出的第二GaN层的上部区域中形成第二GaN突起（150）。 除去第二GaN层上的多孔层以暴露第二GaN层的上部，除了形成第二GaN突起的区域之外。 暴露的第二GaN层的上部和第二GaN突起被电极（160）覆盖。 第一GaN层可以是掺杂有n型或p型杂质的GaN层。 第二GaN层可以是掺杂有与第一GaN层相反的导电类型的杂质的GaN层。

公开(公告)号：KR100734375B1

公开(公告)日：2007-07-03

申请号：KR1020060025692

申请日：2006-03-21

Applicant: 엘지전자 주식회사 ,  엘지이노텍 주식회사

Inventor： 문용태 ,  장준호

IPC: H01L33/12 ,  H01L33/16

CPC classification number: H01L33/005 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/12 ,  H01L33/16 ,  H01L33/36 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A vertically structured light emitting device and a manufacturing method thereof are provided to improve crystallization of a thin film and internal quantum efficiency by selectively growing the thin film on a surface where pillars are formed. Plural pillars(20) are formed on a substrate. Plural semiconductor layers(30) are formed on a surface where the pillars are formed. A first electrode(40) is formed on the semiconductor layers. A supporting layer(60) is formed on the first electrode. The substrate is removed. A second electrode(70) is formed on a surface whose substrate is removed. The substrate is one of sapphire, Si, ZnO, and Sic. The pillars are regularly arranged. The height of the pillar is 0.05 to 10 mum, a radius thereof is 0.01 to 6 mum, and an interval between the pillars is 0.03 to 18 mum.

Abstract translation: 提供一种垂直结构的发光器件及其制造方法，以通过在形成支柱的表面上选择性地生长薄膜来改善薄膜的结晶和内部量子效率。 多个支柱（20）形成在基板上。 在形成支柱的表面上形成有多个半导体层（30）。 第一电极（40）形成在半导体层上。 支撑层（60）形成在第一电极上。 去除衬底。 在其基板被去除的表面上形成第二电极（70）。 衬底是蓝宝石，Si，ZnO和Sic之一。 柱子经常安排。 柱的高度为0.05-10μm，半径为0.01至6μm，柱之间的间隔为0.03至18μm。

公开(公告)号：KR102212775B1

公开(公告)日：2021-02-05

申请号：KR1020140108387

申请日：2014-08-20

Applicant: 엘지이노텍 주식회사

Inventor： 문용태

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/00 ,  F21K9/20 ,  F21Y115/10

Abstract: 실시예는발광소자, 발광소자의제조방법, 발광소자패키지및 조명시스템에관한것이다. 실시예에따른발광소자는제1 도전형반도체층; 상기제1 도전형반도체층상에제1 밴드갭에너지를갖는제1 양자벽을구비하는제1 활성층; 상기제1 활성층상에상기제1 밴드갭에너지보다작은제2 밴드갭에너지를갖는제2 양자벽을구비하는제2 활성층; 및상기제2 활성층상에제2 도전형반도체층;을포함할수있다.