Abstract:
본발명은유기반도체화합물에관한것으로서, 전하이동도가우수하고, 낮은밴드갭을가지며, 광흡수영역이넓고, 적절한분자준위를갖는것을특징으로하며, 본발명의전도성유기반도체화합물은유기광센서(OPD), 유기발광다이오드(OLED), 유기박막트랜지스터(OTFT), 유기태양전지등의다양한유기광전자소자용재료로활용될수 있다. 또한, 용액공정으로박막형성이가능하여대면적소자제작에유리하며소자의제작비용을절감할수 있다.
Abstract:
본 발명은 광흡수층의 Cu 2 ZnSnS 4-x Se x (0≤x≤4) 박막을 이온성 액체를 용매로 하여 정전류 방법을 통해 Cu, Zn, Sn, Se로 이루어진 전구체막을 형성하고 황열처리를 통하여 Cu 2 ZnSnS 4-x Se x (0≤x≤4) film을 제조하는 것을 특징으로 하는 Cu 2 ZnSnS 4-x Se x (0≤x≤4) 박막 태양전지 및 그 제조방법에 관한 것으로서, 진공 방법에 비해 대면적 대량생산의 비용적인 측면에서 이점이 있는 비진공 전착 방법을 제공하며, 이온성 액체를 이용함으로써 부반응으로 형성되는 인체에 유해한 부산물 생성 발생이 적을 뿐만 아니라, 네 가지 원소를 한번에 형성시킬 수 있는 간단한 단일 전착 방법 및 다단계 증착과 열처리 방법을 제공한다.
Abstract translation:本发明涉及一种Cu_2ZnSnS_4-xSe_x(0 <= x <= 4)薄膜太阳能电池及其制造方法,其形成光吸收层的Cu_2ZnSnS_4-xSe_x(0 <= x <= 4)膜,以形成 通过使用离子液体作为溶剂的恒定电流法由Cu,Zn,Sn和Se制成的前体膜,以及通过硫热处理制造Cu_2ZnSnS_4-xSe_x(0 <= x <= 4)膜的特征。 提供了一种简单的电沉积方法和提供非真空电沉积方法的多级沉积和热处理方法,与真空方法相比,从大面积批量生产的成本观点来看,这是有利的。 简单的电沉积方法和多级沉积和热处理方法可以一次形成四种元素,并且通过使用对人体有害的离子液体产生由副反应形成的较少有害的副产物。
Abstract:
본 발명은 낮은 밴드갭을 갖는 신규한 고분자 화합물과 그 제조 방법 및 이를 이용한 고효율 유기태양전지에 관한 것으로서, 본 발명에 따른 낮은 밴드갭 전자공여체로서의 전도성 고분자는 높은 광자 흡수능을 갖고, 우수한 정공이동도를 가지므로, 유기 광센서(OPD), 유기박막트랜지스터(OTFT), 유기발광다이오드(OLED), 유기 태양전지 등 다양한 분야에 적용할 수 있는 유기 광전자소자용 재료뿐만 아니라, n형 물질 개발에도 유용하게 사용될 수 있다.
Abstract:
The present invention relates to a method of manufacturing solid-state electrolyte dye-sensitized solar cells and an electrolyte filling device used therefor. According to the present invention, provided is a method of manufacturing dye-sensitized solar cells which can fill a solid-state electrolyte with uniform and improved efficiency and obtain excellent optical conversion efficiency.
Abstract:
The present invention relates to a method of producing a synthetic gas using solid acid, and specifically, to a producing method of a synthetic gas using solid acid wherein a hydrogen is produced by reacting the solid acid and water and a synthetic gas is produced by reacting the produced hydrogen and a carbon compound, thereby dramatically reducing the generation of environmental pollutants such as carbon dioxide.
Abstract:
The present invention relates to a method for preparing hydrogen using solid acid mixture, and more specifically, by providing a hydrogen preparing method comprising: (a) a solid acid mixture insertion step mixing a carbon body with solid acid mixture so as to prepare solid acid mixture and putting the prepared solid acid mixture into a reactor; (b) a raw material mixture insertion step which inserts raw mixture composed of methane/alcohol/water vaporized in the reactor; (c) a hydrogen generation step which the inserted solid acid mixture acts as a catalyst to the raw material mixture so as to break down the raw material mixture and generates hydrogen as a result of the break down reaction; and (d) a hydrogen discharging step which discharges the generated hydrogen to the outside of the reactor, a hydrogen preparing method which significantly improves economic efficiency and operation stability is provided.
Abstract:
The present invention relates to a device for coating a CIS based film. More particularly, the present invention relates to a device for coating a CIS based film which can be used in fabrication of all semiconductor thin films where light is absorbed and electron-hole pairs can be formed. According to the embodiment of the present invention, the device for coating a CIS based film which can be used in fabrication of all semiconductor thin films where light is absorbed and electron-hole pairs can be formed, uses a self-accelerated photoelectrochemical deposition phenomenon. According to the embodiment of the present invention, the device for coating a CIS based film can fabricate a CIS thin film with a compact microstructure and a flat and uniform surface.