Abstract:
PURPOSE: A cleaning solution for cleaning process after copper chemical mechanical polishing is provided to improve manufacture yield of semiconductor device and removal strength. CONSTITUTION: A cleaning solution for cleaning process after copper chemical mechanical polishing comprises ethylenediaminetetraacetate, 5-aminotetrazole, and a pH adjusting agent consisting of a basic compound. The concentration of the ethylenediaminetetraacetate is 0.006-0.3 M. The concentration of 5- aminotetrazole is 0.001-0.15 M. The basic compound is one or more selected from potassium hydroxide, tetramethylammonium hydroxide, and sodium hydroxide. The washing solution additionally includes one or more components selected from tetramethylammonium hydroxide, RE610, and alcohol ether sulfate.
Abstract:
PURPOSE: A slurry composition is provided to have excellent dispersion stability and polishing ratio in chemical mechanical polishing process, especially in copper CMP, and to improve polishing rate, polishing selectivity ratio, etc. CONSTITUTION: A slurry composition comprises: abrasive selected from a group consisting of ceria, alumina, silica, titania and zirconia and of which solid content is 0.5-10 weight%; a complexing agent having a carboxy group and amino group at the same time, and a corrosion inhibitor comprising an azole group. The complexing agent comprises one or more selected from serine, arginine, glutamine, and salts thereof and has a pH of 6-8. The corrosion inhibitor comprises 5-aminotetrazole or benzotriazoles.