LIGHT COUPLING ELEMENT AND ASSEMBLY
    21.
    发明申请

    公开(公告)号:WO2020003124A1

    公开(公告)日:2020-01-02

    申请号:PCT/IB2019/055345

    申请日:2019-06-25

    Abstract: A light coupling element including a groove and a light redirecting member is described. The groove is for receiving and aligning an optical waveguide and incudes an open front end and a back end. The light redirecting member includes an input side for receiving light from an optical waveguide received and supported in the groove and a light redirecting side for changing a direction of light received from the input side. The groove may include a bottom surface extending between the front and back ends of the groove and including a raised bottom surface portion raised upwardly relative to an unraised bottom surface portion. The unraised bottom surface portion of the bottom surface may be disposed between the raised bottom surface portion of the bottom surface and the input side of the light redirecting member. Optical coupling assemblies including the light coupling element and an optical waveguide are described.

    OPTICAL CONNECTOR AND OPTICAL CONNECTOR ASSEMBLY

    公开(公告)号:WO2019142078A1

    公开(公告)日:2019-07-25

    申请号:PCT/IB2019/050199

    申请日:2019-01-10

    Abstract: An optical connector includes multiple optical subconnectors, wherein each optical subconnector comprises a subconnector housing and one or more optical cable assemblies. The optical connector has two or more housing components, including at least a first housing component and a second housing component. Control of x, y, and z translation of the multiple optical subconnectors is distributed between the first and second housing components such that each housing component controls movement of the optical subconnectors along at least one but not all of the x, y, and z axes.

    OPTICAL WAVEGUIDE POSITIONING FEATURE IN A MULTIPLE WAVEGUIDES CONNECTOR
    23.
    发明申请
    OPTICAL WAVEGUIDE POSITIONING FEATURE IN A MULTIPLE WAVEGUIDES CONNECTOR 审中-公开
    多波导连接器中的光波导定位特性

    公开(公告)号:WO2017066022A1

    公开(公告)日:2017-04-20

    申请号:PCT/US2016/055122

    申请日:2016-10-03

    CPC classification number: G02B6/3839 G02B6/3861 G02B6/3885

    Abstract: A coupling unit includes a light coupling element comprising an attachment area for receiving and permanently attaching to a plurality of optical waveguides. One or more grooves are provided at the attachment area. Each groove is configured to receive an optical waveguide and defined by a bottom surface, a first region, a second region, and an opening. The first region is defined between the bottom surface and the second region. The first region in cross section has substantially parallel sidewalls separated by a spacing. The second region is disposed between the first region and the opening. A width of the opening is greater than the spacing.

    Abstract translation: 耦合单元包括光耦合元件,该光耦合元件包括用于接收并永久地附接到多个光波导的附接区域。 在附件区域提供一个或多个凹槽。 每个凹槽被配置为接收光波导并由底面,第一区域,第二区域和开口限定。 第一区域被限定在底面和第二区域之间。 第一区域的横截面具有基本平行的侧壁,所述侧壁以间隔分开。 第二区域设置在第一区域和开口之间。 开口的宽度大于间距。

    BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS
    24.
    发明申请

    公开(公告)号:WO2012173778A3

    公开(公告)日:2012-12-20

    申请号:PCT/US2012/040066

    申请日:2012-05-31

    Abstract: We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.

    RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY
    25.
    发明申请
    RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY 审中-公开
    重新发射半导体结构,具有提高效率

    公开(公告)号:WO2010129412A1

    公开(公告)日:2010-11-11

    申请号:PCT/US2010/033142

    申请日:2010-04-30

    Abstract: A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

    Abstract translation: 一叠半导体层(310)形成再发射半导体结构(RSC)。 堆叠(310)包括将第一波长的光转换成第二波长的光的有源区(316),所述有源区(316)包括至少一个势阱。 堆叠(310)还包括从堆叠的外表面延伸到活动区域的非活性区域(318)。 凹陷(326)形成在从外表面延伸到非活动区域(318)的堆叠(310)中。 平均凹陷深度为非活性区域的厚度的至少50%。 或者,平均凹陷深度为最近的潜在井距的至少50%。 还公开了凹陷(326)的其他替代表征。 在平面图中,凹陷(326)可以具有至少40%的包装密度。 凹陷(326)也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION
    26.
    发明申请
    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 审中-公开
    向下转换的光源具有均匀的波长发射

    公开(公告)号:WO2009085594A2

    公开(公告)日:2009-07-09

    申请号:PCT/US2008/086060

    申请日:2008-12-09

    CPC classification number: H01L27/156 H01L33/0079 H01L33/505

    Abstract: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    Abstract translation: 光源的布置被连接到半导体波长转换器。 每个光源以各自的峰值波长发射光,并且光源的布置由峰值波长的第一范围表征。 半导体波长转换器的特征在于当由光源布置泵浦时第二范围的峰值波长。 第二范围的峰值波长比第一范围的峰值波长窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长更长的波长的吸收边缘。 波长转换器也可以用于减少来自扩展光源的输出的波长变化。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME
    27.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:WO2009075973A2

    公开(公告)日:2009-06-18

    申请号:PCT/US2008/082778

    申请日:2008-11-07

    CPC classification number: H01L33/08 H01L33/0079 H01L33/32 H01L33/34

    Abstract: Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

    Abstract translation: 公开了发光器件及其制造方法。 发光装置包括发射蓝光或UV光并附着到半导体构造的发光二极管(LED)。 该半导体构造包括再发光半导体构造,其包括至少一个II-VI化合物层并且将所发射的蓝光或UV光的至少一部分转换成更长波长的光。 该半导体结构还包括包含AlInAs或GaInAs化合物的蚀刻停止结构。 蚀刻停止能够承受能够蚀刻InP的蚀刻剂。

    OPTICAL FERRULE ASSEMBLIES
    29.
    发明申请

    公开(公告)号:WO2022130071A1

    公开(公告)日:2022-06-23

    申请号:PCT/IB2021/060856

    申请日:2021-11-23

    Abstract: An optical ferrule assembly includes a hybrid optical ferrule having a glass portion assembled to a polymeric portion. The polymeric portion includes a groove for receiving and supporting an optical fiber having opposing open front and back ends. A light redirecting member includes an input surface for receiving light from the optical fiber and a light redirecting side. The open back end of the groove and the input surface define a recessed region therebetween. The glass portion includes an optically transparent glass insert disposed in the recessed region conforming in shape to an internal shape of the recessed region. An optical fiber is received and supported in the groove. The optical fiber includes a fiber end laser welded to the glass insert so that a central light ray from the optical fiber propagates through the glass insert before being received and redirected by the light redirecting side.

    LIGHT COUPLING ELEMENT
    30.
    发明申请

    公开(公告)号:WO2020240346A1

    公开(公告)日:2020-12-03

    申请号:PCT/IB2020/054739

    申请日:2020-05-19

    Abstract: A light coupling element including a plurality of waveguide attachment features and a light redirecting member is described. Each attachment feature has an entrance end opposite a terminal end. The entrance ends are arranged at a pitch Pe. The light redirecting member is disposed closer to the terminal ends, and farther from the entrance ends, and includes an input surface, a reflecting side and an exit surface. When a waveguide is attached at each attachment feature, a central light ray emitted by each waveguide enters the light redirecting member through the input surface, is redirected by the reflecting side and exits the light redirecting member at the exit surface, the central light ray intersecting the exit surface at an exit point, each attachment feature corresponding to a different exit point at the exit surface. The exits points are arranged at a pitch Px not equal to Pe.

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