公开(公告)号：EP2341528A1

公开(公告)日：2011-07-06

申请号：EP10150107.0

申请日：2010-01-05

Applicant: ABB Technology AG

Inventor： Matthias, Sven ,  Kopta Arnost ,  Munaf Rahimo

IPC: H01L21/329 ,  H01L29/06 ,  H01L29/32 ,  H01L29/861

CPC classification number: H01L29/8611 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/32 ,  H01L29/66128

Abstract: A semiconductor device (1) and a method for producing such semiconductor device are proposed. The semiconductor device comprises a first layer (2) including a base layer (4) and a cathode layer (12) of a first conductivity type, a second layer (10) serving as an anode layer of a second conductivity type and further layers (14, 16) acting as anode and cathode contacts. Furthermore, a junction termination region (24) arranged in a circumferential region surrounding the second layer (10) is provided and comprises self-contained sub-regions (26) of the second conductivity type embedded into the first layer (2). Additionally, a low doping region (50) is provided in an intermediate region between the second layer (10) and the junction termination region (24). The proposed combination of junction termination region (24) and low doping region (50) may result in improved electrical characteristics while maximizing a safe operating area of the device (1). Particularly when the anode layer (10) is provided with a double anode structure comprising a heavily doped shallow portion (50) and a lightly doped deep portion (40), the proposed semiconductor device may be produced advantageously using only a single masking step during ion implantation for generating the second layer (10), the junction termination region (24) and the low doping region (42) simultaneously.

Abstract translation: 提出了一种半导体器件（1）及其制造方法。 半导体器件包括第一层（2），其包括基底层（4）和第一导电类型的阴极层（12），用作第二导电类型的阳极层的第二层（10） 14,16）充当阳极和阴极触点。 此外，设置布置在围绕第二层（10）的圆周区域中的接合终端区域（24），并且包括嵌入第一层（2）中的第二导电类型的独立子区域（26）。 另外，在第二层（10）和结端接区域（24）之间的中间区域中提供低掺杂区域（50）。 所提出的结端接区域（24）和低掺杂区域（50）的组合可以导致改善的电特性，同时最大化装置（1）的安全操作区域。 特别是当阳极层（10）设置有包括重掺杂浅部分（50）和轻掺杂深部分（40）的双阳极结构时，所提出的半导体器件可以有利地仅在离子中仅使用一个掩模步骤 用于同时产生第二层（10），结终端区（24）和低掺杂区（42）的注入。