公开(公告)号：JP2006312600A

公开(公告)日：2006-11-16

申请号：JP2005135704

申请日：2005-05-09

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YAMADA NAOKI ,  SAKURAI ATSUSHI

IPC: C07F7/00 ,  C07F7/28 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To provide a compound of a group 4 metal, such as titanium or zirconium which is suitable as a raw material used in a thin film-producing method, such as a CVD method or an ALD method, using a vaporized precursor, is easily thermally and/or oxidatively decomposed, when deposited into a thin film, has a low melting point, can be transported in a liquid state, has a large vapor pressure, can easily be vaporized, when vaporized or transported, and can easily control the composition of an obtained thin film, when producing the thin film of many components.
SOLUTION: This metal compound is represented by the general formula (I) [R
1 to R
7 are each a 1 to 4C alkyl; A is a 1 to 4C alkanediyl; M is titanium, zirconium or hafnium atom; (m) is 1, 2 or 3].
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适合作为薄膜制造方法中使用的原料的第四族金属如钛或锆的化合物，例如CVD法或ALD法，使用 蒸发的前体易于热和/或氧化分解，当沉积成薄膜，具有低熔点时，可以以液态运输，蒸气压大，蒸发或运输时容易蒸发， 并且当制造许多组分的薄膜时，可以容易地控制所获得的薄膜的组成。 解决方案：该金属化合物由通式（I）表示：[R SP 1] / R 3至R 7 各自为1至4个烷基; A是1至4个烷二基; M是钛，锆或铪原子; （m）为1,2或3]。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006249046A

公开(公告)日：2006-09-21

申请号：JP2005071436

申请日：2005-03-14

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SAKURAI ATSUSHI ,  TSUKAMOTO NAOTO

IPC: C07F7/04 ,  C23C16/42 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a silicon compound having a high vapor pressure, capable of forming film at a low temperature, chemically stable on a normal temperature and normal pressure, excellent in preservation stability and a mixing stability with another source, and especially suitable as a precursor of a thin membrane production method having a gasification process such as a CVD (chemical vapor phase deposition) method, an ALD (atomic layer deposition) method or the like.
SOLUTION: This silicon alkoxide compound is expressed by general formula (I) [wherein, R is a 1-4C alkyl; R
1 to R
4 are each H or a 1-4C alkyl; A is a 1-4C alkanediyl; and (n) is 1-3 number].
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够在低温下形成薄膜的高蒸气压的硅化合物，在常温常压下化学稳定，保存稳定性优异，与其他来源的混合稳定性优异， 特别适合作为具有CVD（化学气相沉积）法，ALD（原子层沉积法）等气化处理的薄膜制造方法的前体。 解决方案：该硅烷氧化物化合物由通式（I）表示[其中，R是1-4C烷基; R 1 至R 4 分别为H或1-4C烷基; A是1-4C烷二基; 和（n）为1-3数]。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2008088511A

公开(公告)日：2008-04-17

申请号：JP2006271707

申请日：2006-10-03

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： TANAKA SHINICHI ,  SAKURAI ATSUSHI ,  YAMADA NAOKI

IPC: C23C16/40 ,  C07F3/06

CPC classification number: C07F3/06 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To impart properties such as reactivity and volatility suitable to a precursor feeding zinc to a thin film, particularly, to impart properties such as reactivity and volatility suitable for the production of a thin film by oxidation in a CVD (chemical vapor deposition) process.
SOLUTION: The raw material for thin film deposition comprises a zinc compound expressed by general formula (1) (wherein, R
1 is a 1 to 4C alkyl group; R
2 and R
3 are each a hydrogen atom or a 1 to 4C alkyl group, respectively independently; R
4 is a 1 to 4C alkyl group; R
5 is a 1 to 4C alkyl group or -CH
2 -CH
2 -NR
6 R
7 ; R
6 and R
7 are each a 1 to 4C alkyl group; X is an oxygen atom or a nitrogen atom; and (m) is 0 in the case X is an oxygen atom, and is 1 in the case X is a nitrogen atom).
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了赋予适合于将锌前体加入到薄膜中的反应性和挥发性等特性，特别是赋予适于通过CVD中氧化生产薄膜的反应性和挥发性等特性 （化学气相沉积）工艺。 解决方案：用于薄膜沉积的原料包括由通式（1）表示的锌化合物（其中，R 1 SP 1是一个1-4C烷基; R 2 SP 2， 分别独立地为氢原子或1〜4个碳原子的烷基，R 4为烷基; R 6为烷基， CH 2是1至4个烷基或-CH 2 SB 2 -CH SB 2 -NR 6 SP SP 7 >; R 6 和R 7 各自为1至4个烷基; X为氧原子或氮原子;（x）为 是氧原子，在X是氮原子的情况下为1）。 版权所有（C）2008，JPO＆INPIT