-
公开(公告)号：JPH0935622A
公开(公告)日：1997-02-07
申请号：JP17873795
申请日：1995-07-14
Applicant: KOBE STEEL LTD , AGENCY IND SCIENCE TECHN
Inventor： HIRANO TAKAYUKI , ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To provide a long-life cold electron emitting element and its manufacturing method wherein an emitter tip end part is excellent in machining accuracy with uniformalized structure, and a stable current can be emitted without connecting an external elements. SOLUTION: A cold electron emitting element has an emitter formed of a single silicon crystal, a tip end part 4 of the said emitter having p-type electric conductivity, and a base part 1 of the emitter has n-type electric conductivity. When a positive voltage is applied to a lend-out electrode 3, an n-type reversed layer 4b is formed on a surface of the tip end part 4, this n-type reversed layer 4b becoming an electron emitting area. A surface of a cone-shaped emitter area is covered by an SiO2 layer, p-type impurities are ion-implanted in the surface of the emitter area via the SiO2 layer, thereafter the said SiO2 layer is removed, and then a heat treatment is carried out, the tip end part 4 of the cold electron emitting element can be thus manufactured.
-
公开(公告)号：JPH0887955A
公开(公告)日：1996-04-02
申请号：JP24877094
申请日：1994-09-17
Applicant: TOPPAN PRINTING CO LTD , AGENCY IND SCIENCE TECHN
Inventor： GAMO SHUSUKE , KANAMARU MASATAKE , ITO JUNJI , ISHIZAKI MAMORU
Abstract: PURPOSE: To provide an electron emitting element, forming an emitter electrode, tilted to a gate electrode, in high position accuracy and in good reproducibility, arranging the gate electrode in self aligning relating to the emitter electrode in a very small gap length with no limitation by a design rule of a photolithographic method, and further rapidly spreading a range of selecting an emitter electrode material. CONSTITUTION: A substrate 1, insulating layer 2 and a gate electrode 3 are successively laminated, to provide an opening part A leading to this substrate in the gate electrode 3 and the insulating layer 2, and on the substrate 1 in this opening part A, an emitter electrode 4 is laminated so as to prevent coming into contact with the gate electrode 3. A recessed part 1a of reverse cone shape is formed in the substrate 1, and along a slope of this recessed part 1a, the emitter electrode 4 is formed in a manner wherein its peripheral edge part 4a is protruded from an upper edge part of the recessed part 1a of the substrate. When the emitter electrode 4 is formed, a protective layer is provided in its both surfaces.
-
公开(公告)号：JPH0850850A
公开(公告)日：1996-02-20
申请号：JP18695594
申请日：1994-08-09
Applicant: AGENCY IND SCIENCE TECHN , FUJI ELECTRIC CO LTD
Inventor： ITO JUNJI , UEMATSU TAKAHIKO , RIYOUKAI YOUICHI , NISHIZAWA MASATO , MATSUZAKI KAZUO
Abstract: PURPOSE:To improve the processability of the shape of an emitter, and improve the reproducibility, and stabilize electron emission property by forming an emitter on an insulating layer out of a silicon film. CONSTITUTION:A step is made in the silicon oxide layer 34 being the insulating layer on the surface of a silicon substrate 31. On the projection 341 of this insulating layer are an comb-shaped emitter 32 and an anode electrode 35 made of silicon single crystalline films. And, on the surface of the recess 342 of the insulating layer between the emitter 32 and the anode electrode 35 is a gate electrode 33 being a high melting point metal made. And, on the emitter 32 is an emitter pad 372 of an Mo film provide, and on the anode electrode 35 is an upper pad 373 provided. By putting this electron emission element in such structure, the processability and the reproducibility of the shape of the emitter improve. Furthermore, by specifying the crystal azimuth of the single crystal film, the emitter having a sharp edge is made, which stabilizes electron emission property.
-
公开(公告)号：JPH0465047A
公开(公告)日：1992-03-02
申请号：JP17542090
申请日：1990-07-04
Applicant: AGENCY IND SCIENCE TECHN , FUTABA DENSHI KOGYO KK
Inventor： ITO JUNJI , KANAMARU MASATAKE , ITO SHIGEO , YAMAURA TATSUO
Abstract: PURPOSE:To make tip parts in a plane pattern of an emitter from which electrons are emitted sharp by depositing W, SiN, and Al successively on an insulating substrate. CONSTITUTION:A tungsten layer 2 (W layer 2), a silicon nitride layer 3 (SiN layer 3), and an aluminum layer 4 (Al layer 4) are successively formed on an insulating substrate 1 by evaporation. A photoresist 5 is applied to the surface of the Al layer 4, exposed to light, developed, and patterned into a plane pattern of an electron emitting device, Next, the Al layer 4 as an upper layer is so patterned by wet etching as to be hollowed out. Further, the W layer 2 as a lower layer is dry-etched and here the upper Al layer 4 works as a mask having sufficient resistance to the dry-etching. For this, the periphery part of the lower W layer 2 does not become round and is etched corresponding to the Al layer 4 pattern, so that the comb-like pattern in a plane of an emitter becomes sharp.
-
公开(公告)号：JPH03276543A
公开(公告)日：1991-12-06
申请号：JP7845390
申请日：1990-03-27
Applicant: AGENCY IND SCIENCE TECHN , FUTABA DENSHI KOGYO KK
Inventor： ITO JUNJI , KANAMARU MASATAKE , ITO SHIGEO , YAMAURA TATSUO , WATANABE TERUO , OGAWA YUKIO , KISHINO TAKAO
Abstract: PURPOSE:To obtain a good display with a simple structure by constituting an image display device with multiple field emission emitter arrays provided with a gate electrode for each field emission emitter and multiple anode electrodes perpendicular to them. CONSTITUTION:An insulating layer 103 covering anode electrodes is formed on a glass substrate 101, through holes 104 are formed at the positions corresponding to the anode electrodes 102 at the preset interval on the insulating layer 103, and dot-shaped phosphor layers 105 are provided at the positions of the through holes 104 of the insulating layer 103. The phosphor layers 105 are electrically connected to the anode electrodes 102 via the through holes 104 to serve as luminous dots constituting a display screen. Field emission emitters 106 are provided adjacently to the phosphor layers 105 respectively on the insulating layer 103. Multiple field emission emitters 106 are connected in common along the Y-direction to form multiple field emission emitter arrays 108. A good display is obtained with a simple structure.
-
Patent Agency Ranking26.发明专利
公开(公告)号：JP2000353482A
公开(公告)日：2000-12-19
申请号：JP16300899
申请日：1999-06-09
Applicant: AGENCY IND SCIENCE TECHN , TOYO KOHAN CO LTD
Inventor： ITO JUNJI , KANAMARU MASATAKE , MATSUKAWA TAKASHI , EBARA KEIGO
Abstract: PROBLEM TO BE SOLVED: To provide a flat-panel structure display device capable of reliably supporting an anode electrode on a cathode substrate being effectively thinned by making the cathode substrate as thin as possible. SOLUTION: A plurality of fine cathode electron source fitted to a plate-like cathode substrate 10 and a plurality of phosphors 20 formed on a conductive and transparent plate-like anode electrode 18 are arranged face to face, and the phosphors 20 are illuminated by the electrons emitted from the cathode electron sources to display an image on a flat-panel structure display device A. A plate-like spacer 17 made of a conductive material is provided between the cathode substrate 10 and the anode electrode 18. A plurality of opening sections 21 having the prescribed area are formed at intervals in a penetrated state at positions of the spacer 17 corresponding to the cathode electron sources and the phosphors 20.
-
公开(公告)号：JP2000173442A
公开(公告)日：2000-06-23
申请号：JP34140198
申请日：1998-12-01
Applicant: TOPPAN PRINTING CO LTD , AGENCY IND SCIENCE TECHN
Inventor： GAMO SHUSUKE , KANAMARU MASATAKE , ITO JUNJI
Abstract: PROBLEM TO BE SOLVED: To restrain local large amount of current without raising an operational voltage and to minimize current variation, by forming an emitter in first and second opening so as not to come into contact with a gate electrode, and forming a third conductive layer on a thin semiconductor film between first and second conductive layers via a gate insulating film. SOLUTION: A thin semiconductor film layer 4 made of non-single crystal silicon is arranged on a first conductive layer 2, a second conductive layer 3, and a clearance A provided on an insulating board 1. A third conductive layer 6 is formed via an insulating layer 5 on the thin semiconductor film layer 4 of the clearance A. The insulating layer 5 and a gate electrode 7 are sequentially laminated on the thin semiconductor film layer 4 on the second conductive layer 3. A conical or truncated conical emitter 8 made of non-single crystal silicone is formed, in non-contact with the gate electrode 7, on the thin semiconductor film layer 4 in an emitter hole B provided in the gate electrode 7 and the insulting layer 5. This provides emission current highly controlled even on the insulating board 1.
-
公开(公告)号：JP2000090811A
公开(公告)日：2000-03-31
申请号：JP26177398
申请日：1998-09-16
Applicant: AGENCY IND SCIENCE TECHN , TOYO KOHAN CO LTD
Inventor： ITO JUNJI , KANAMARU MASATAKE , EBARA KEIGO
Abstract: PROBLEM TO BE SOLVED: To provide the stabilized emission current by coating a surface of a conical emitter formed with a sharp tapered projecting end and provided so as to be projected from a surface of a basal member with a conductive film formed by sintering a resist film of the organic material. SOLUTION: After forming an emitter 13 on a basal member 11, a conductive film 21 for coating a surface of the emitter 13 is formed, and continuously, an insulating layer 12 as an inter-electrode insulating layer and an electrode layer as a gate electrode 14 are laminated, and the laminated electrode layer and the insulating layer 12 are formed with openings for exposing a sharp end of the emitter 13 in order by the lithography. The surface of the emitter 13 is chemically changed to inert by coating it with the conductive film 21 using the chemically stabilized material, and the residual gas molecule in the vacuum becomes hard to be adsorbed so as to prevent the lowering of the emission current at a low degree of vacuum. As a material for the conductive film 21, a material mainly composed of carbon is used in principle, and a polyimide group material can be also used.
-
公开(公告)号：JPH09257816A
公开(公告)日：1997-10-03
申请号：JP6864296
申请日：1996-03-25
Applicant: SEIKO INSTR INC , AGENCY IND SCIENCE TECHN
Inventor： SHIRAKAWABE YOSHIHARU , SHIMIZU NOBUHIRO , TAKAHASHI HIROSHI , ITO JUNJI , KANAMARU MASATAKE , YOKOYAMA HIROSHI
Abstract: PROBLEM TO BE SOLVED: To emit an electron beam with high controllability by providing an electrode at the periphery of the chip of a cantilever, and incorporating the function of an infinitesimal electron source. SOLUTION: One end of a lever 2 is fixed to a supporting base 3, and a needle-like chip 1 is provided at the end of the lever 2. An insulating layer 7 is provided on the lever 2, a drawing electrode 4 is provided on the layer 7, and a pad 5 for connecting an external circuit to the electrode 4 and chip 1 is provided on the base 3. A voltage is applied between the chip 1 and electrode 4, hence electrons are emitted from the end of the chip 1, and a current value is controlled by regulating the variable voltage 8 to be applied to the electrode 4 from several mV to about 100V. A sample 15 at this time is stably emitted with an electron beam 10 as a ground voltage. In this case, the positional relationship between the chip 1 and the electrode 4 in its vicinity is desired to dispose the electrode 4 at the lower position by several hundreds nm to several μm from the end of the chip 1 to raise the emitting efficiency of the beam.
-
公开(公告)号：JPH0963466A
公开(公告)日：1997-03-07
申请号：JP21707195
申请日：1995-08-25
Applicant: KOBE STEEL LTD , AGENCY IND SCIENCE TECHN
Inventor： HIRANO TAKAYUKI , ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To obtain a cold electron emitting element, excellent in the working accuracy arc structure uniformity of an emitter tip part, and also capable of stably emitting an electric current. SOLUTION: In a cold electron emitting element, an emitter base part 14b composed of an (n) type semiconductor, a protruded part 14, and a source region 17 are formed on a (p) type silicone base plate 18, and a metallic coat 13a, acting as an extraction electrode and a gate electrode via an insulating layer 12a, is formed on a substrate 18 including the part 14 and the region 17. At the time of manufacturing the cold electron emitting element, a cone type emitter tip part 14, an emitter composed of the part 14b, and a source region 17 are formed on the plate 18. Next, an insulating layer 12a and a metallic coat 13a, to be adopted as the extraction and gate electrodes, are formed on the plate 18 including an emitter region and part of the region 17. Then, an (n) type impurity is led into the emitter and the region 17 to form the (n) type emitter and the (n) type region 17.
-
-
-
-
-
-
-
-
-
Search Results
55
records
(took 0.028 seconds)
