公开(公告)号：US20150200207A1

公开(公告)日：2015-07-16

申请号：US14153954

申请日：2014-01-13

Applicant: Apple Inc.

Inventor： Daisuke Nozu ,  Hirokazu Yamagata ,  Hiroshi Osawa ,  Shang-Chih Lin ,  Shih-Chang Chang ,  Yu-Cheng Chen

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/133502 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13606 ,  G02F2001/13685 ,  G02F2201/40 ,  G02F2202/42 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors formed on top of a glass substrate. A passivation layer may be formed on the thin-film transistor layers. A first low-k dielectric layer may be formed on the passivation layer. Data line routing structures may be formed on the first low-k dielectric layer. A second low-k dielectric layer may be formed on the first low-k dielectric layer. A common voltage electrode and associated storage capacitance may be formed on the second low-k dielectric layer. The first and second low-k dielectric, layers may be formed from material having substantially similar refractive indices to maximize backlight transmittance and may have appropriate thicknesses so as to minimize parasitic capacitive loading.

Abstract translation: 显示器可以具有滤色器层和薄膜晶体管层。 液晶材料层可以位于滤色器层和薄膜晶体管（TFT）层之间。 TFT层可以包括形成在玻璃基板的顶部的薄膜晶体管。 钝化层可以形成在薄膜晶体管层上。 可以在钝化层上形成第一低k电介质层。 数据线路由结构可以形成在第一低k电介质层上。 可以在第一低k电介质层上形成第二低k电介质层。 公共电压电极和相关联的存储电容可以形成在第二低k电介质层上。 第一和第二低k电介质层可以由具有基本上相似的折射率的材料形成，以使背光透射率最大化，并且可以具有适当的厚度，以使寄生电容负载最小化。