公开(公告)号：WO2011012624A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/060894

申请日：2010-07-27

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在衬底上形成结构，该结构具有至少一个特征，该特征在印刷轮廓中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像，第一图像使用非零次衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：WO2010145951A3

公开(公告)日：2010-12-23

申请号：PCT/EP2010/057799

申请日：2010-06-03

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie

Inventor： DEN BOEF, Arie

IPC: G03F9/00 ,  G03F7/20

Abstract: In order to improve overlay measurement, product marker gratings on a substrate are measured in a lithographic apparatus by an alignment sensor using scatterometry. Then information relating to the transverse profile of the product marker grating, such as its asymmetry, is determined from the measurement. After printing an overlay marker grating on a resist film, the lateral overlay of the overlay marker grating with respect to the product marker grating is measured by scatterometry and using the determined asymmetry information in combination with a suitable process model. The alignment sensor data may be used to first reconstruct the product grating and this information is fed forward to the scatterometer that measures the stack of product and resist grating and light scattered by the stack is used for reconstruction of a model of the stack to calculate overlay. The overlay may then, optionally, be fed back to the lithographic apparatus for correction of overlay errors.

公开(公告)号：WO2010031510A1

公开(公告)日：2010-03-25

申请号：PCT/EP2009/006518

申请日：2009-09-08

Applicant: ASML NETHERLANDS B.V. ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie ,  VAN DE KERKHOF, Marcus ,  VAN DER SCHAAR, Maurits

Inventor： BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie ,  VAN DE KERKHOF, Marcus ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70625

Abstract: The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

Abstract translation: 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的光瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，衬底上的结构的临界尺寸或重叠相关。

公开(公告)号：EP2304504B1

公开(公告)日：2019-07-03

申请号：EP09769074.7

申请日：2009-05-14

Applicant: ASML Netherlands B.V.

Inventor： DEN BOEF, Arie

IPC: G03F7/20

公开(公告)号：EP2304504A1

公开(公告)日：2011-04-06

申请号：EP09769074.7

申请日：2009-05-14

Applicant: ASML Netherlands B.V.

Inventor： DEN BOEF, Arie

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An overlay measurement apparatus has a polarized light source for illuminating a sample with a polarized light beam and an optical system to capture light that is scattered by the sample. The optical system includes a polarizer for transmitting an orthogonal polarization component that is orthogonal to a polarization direction of the polarized light beam. A detector measures intensity of the orthogonal polarization component. A processing unit is connected to the detector, and is arranged to process the orthogonal polarization component for overlay metrology measurement using asymmetry data derived from the orthogonal polarization component.