Abstract:
A measurement system for a lithographic apparatus includes a sub-frame compliantly mounted on a reference frame. A measurement device, e.g. an alignment sensor, is mounted on the sub-frame. Soft mounting of the sub-frame isolates the alignment sensor from high-frequency disturbances, e.g. acoustic noise, by acting as a low-pass filter with a cut-off frequency, e.g. in the range of from 100 to 200 Hz.
Abstract:
A thermal conditioning unit to thermally condition a substrate, the thermal conditioning unit including: a thermal conditioning element having a first layer, in use, facing the substrate and including a material having a thermal conductivity of 100 W/mK or more, a second layer and a heat transfer component positioned between the first and second layers; and a stiffening member which is stiffer than the thermal conditioning element and configured to support the thermal conditioning element so as to reduce mechanical deformation thereof, wherein the thermal conditioning element is thermally isolated from the stiffening member.
Abstract:
A support apparatus for a lithographic apparatus has an object holder and an extraction body radially outward of the object holder. The object holder is configured to support an object. The extraction body includes an extraction opening configured to extract fluid from a top surface of the support apparatus. The extraction body is spaced from the object holder such that the extraction body is substantially decoupled from the object holder. The extraction body comprises a projection configured such that it surrounds the object holder and such that, in use, a layer of liquid is retained on the projection and in contact with an object supported on the object holder.
Abstract:
A lithographic apparatus has a support structure configured to support a patterning device, the patterning device serving to pattern a radiation beam according to a desired pattern and having a planar main surface through which the radiation beam passes; an outlet opening configured to direct a flow of a gas onto the patterning device; and an inlet opening configured to extract the gas which has exited the outlet opening, wherein the outlet opening and inlet opening are in a facing surface facing the planar main surface of the patterning device.
Abstract:
A thermal conditioning unit to thermally condition a substrate, the thermal conditioning unit including: a thermal conditioning element having a first layer, in use, facing the substrate and including a material having a thermal conductivity of 100 W/mK or more, a second layer and a heat transfer component positioned between the first and second layers; and a stiffening member which is stiffer than the thermal conditioning element and configured to support the thermal conditioning element so as to reduce mechanical deformation thereof, wherein the thermal conditioning element is thermally isolated from the stiffening member.
Abstract:
A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.
Abstract:
Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.
Abstract:
A lithographic apparatus has a support structure configured to support a patterning device, the patterning device serving to pattern a radiation beam according to a desired pattern and having a planar main surface through which the radiation beam passes; an outlet opening configured to direct a flow of a gas onto the patterning device; and an inlet opening configured to extract the gas which has exited the outlet opening, wherein the outlet opening and inlet opening are in a facing surface facing the planar main surface of the patterning device.
Abstract:
A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.
Abstract:
A thermal conditioning unit to thermally condition a substrate in a lithographic apparatus, the thermal conditioning unit including: a thermal conditioning element having a first layer, in use, facing the substrate and including a material having a thermal conductivity of 100 W/mK or more, a second layer and a heat transfer component positioned between the first and second layers; and a stiffening member which is stiffer than the thermal conditioning element and configured to support the thermal conditioning element so as to reduce mechanical deformation thereof, wherein the thermal conditioning element is thermally isolated from the stiffening member.