公开(公告)号：US09953926B2

公开(公告)日：2018-04-24

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US09460932B2

公开(公告)日：2016-10-04

申请号：US14538292

申请日：2014-11-11

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Jiang Lu ,  Guodan Wei

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76846 ,  H01L21/76849

Abstract: Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.

Abstract translation: 将特征选择性地沉积到衬底表面上同时保持特征上的基本上直的侧壁的方法。 生长特征的一部分，然后用保护膜覆盖。 从特征的顶部去除保护膜，在特征的侧面留下一些膜，并重复该过程以生长所需厚度的特征。

公开(公告)号：US09209074B2

公开(公告)日：2015-12-08

申请号：US14717375

申请日：2015-05-20

Applicant: Applied Materials, Inc.

Inventor： Jiang Lu ,  Hyoung-Chan Ha ,  Paul F. Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang-ho Yu ,  Murali K. Narasimhan

IPC: B05D5/12 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

公开(公告)号：US20150194384A1

公开(公告)日：2015-07-09

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

Abstract translation: 描述了制造具有包含钴和氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包括CoMn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US20150132951A1

公开(公告)日：2015-05-14

申请号：US14538292

申请日：2014-11-11

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Jiang Lu ,  Guodan Wei

IPC: H01L21/3205

CPC classification number: H01L21/28562 ,  H01L21/76846 ,  H01L21/76849

Abstract: Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.

Abstract translation: 将特征选择性地沉积到衬底表面上同时保持特征上的基本上直的侧壁的方法。 生长特征的一部分，然后用保护膜覆盖。 从特征的顶部去除保护膜，在特征的侧面留下一些膜，并重复该过程以生长所需厚度的特征。