公开(公告)号：US20230118964A1

公开(公告)日：2023-04-20

申请号：US18068467

申请日：2022-12-19

Applicant: Applied Materials, Inc.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/67

Abstract: A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.

公开(公告)号：US20230051200A1

公开(公告)日：2023-02-16

申请号：US17399702

申请日：2021-08-11

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/762

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing layer on surfaces defining the processing region of the semiconductor processing chamber. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20230050255A1

公开(公告)日：2023-02-16

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20220384161A1

公开(公告)日：2022-12-01

申请号：US17330061

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle Bobek ,  Ruiyun Huang ,  Abdul Aziz Khaja ,  Amit Bansal ,  Dong Hyung Lee ,  Ganesh Balasubramanian ,  Tuan Anh Nguyen ,  Sungwon Ha ,  Anjana M. Patel ,  Ratsamee Limdulpaiboon ,  Karthik Janakiraman ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  B08B7/00 ,  C23C14/56

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

公开(公告)号：US20220341034A1

公开(公告)日：2022-10-27

申请号：US17240395

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

IPC: C23C16/04 ,  C23C22/77 ,  C23C22/82 ,  C23C16/40 ,  C23C16/18

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

公开(公告)号：US11456173B2

公开(公告)日：2022-09-27

申请号：US16797111

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Meenakshi Gupta ,  Rui Cheng ,  Srinivas Guggilla ,  Karthik Janakiraman ,  Diwakar N. Kedlaya ,  Zubin Huang

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/32

Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

公开(公告)号：US20220285232A1

公开(公告)日：2022-09-08

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  H01L21/67 ,  G05B13/02 ,  G05B13/04

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

公开(公告)号：US20220199404A1

公开(公告)日：2022-06-23

申请号：US17125349

申请日：2020-12-17

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

IPC: H01L21/02 ,  C23C16/455

Abstract: Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200° C. The method may also include depositing a silicon-containing film along the patterned photoresist.

公开(公告)号：US20220093390A1

公开(公告)日：2022-03-24

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

公开(公告)号：US10483141B2

公开(公告)日：2019-11-19

申请号：US15697492

申请日：2017-09-07

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Hari K. Ponnekanti ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/677 ,  H01L21/67 ,  B65G54/02

Abstract: A substrate transport system is disclosed and includes a chamber having an interior wall, a planar motor disposed on the interior wall, and a substrate carrier magnetically coupled to the planar motor. The substrate carrier comprises a base and a substrate supporting surface coupled to a support member extending from the base in a cantilevered orientation.