公开(公告)号：US20210280428A1

公开(公告)日：2021-09-09

申请号：US17174395

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/30 ,  H01L21/02

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US20200381248A1

公开(公告)日：2020-12-03

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong SUN ,  Praket Prakash JHA ,  Jingmei LIANG ,  Martin Jay SEAMONS ,  DongQing LI ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Wolfgang R. ADERHOLD

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/30

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US20170365480A1

公开(公告)日：2017-12-21

申请号：US15442311

申请日：2017-02-24

Applicant: Applied Materials, Inc.

Inventor： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA

IPC: H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L29/40 ,  H01L21/324

CPC classification number: H01L21/28255 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/3212 ,  H01L21/324 ,  H01L29/401

Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.