公开(公告)号：US09653320B2

公开(公告)日：2017-05-16

申请号：US14495728

申请日：2014-09-24

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Chiu-pien Kuo ,  Shang-Ting Hsieh ,  Guochuan Hong

IPC: H01L21/311 ,  H01L21/3213 ,  H01L23/532

CPC classification number: H01L21/32139 ,  H01L21/32136 ,  H01L21/32138 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.