公开(公告)号：US11170967B2

公开(公告)日：2021-11-09

申请号：US16824069

申请日：2020-03-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Bassom ,  Neil Colvin ,  Tseh-Jen Hsieh ,  Michael Ameen

IPC: H01J37/08 ,  H01J37/30 ,  H01J49/10 ,  H01J27/02

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

公开(公告)号：US20200303154A1

公开(公告)日：2020-09-24

申请号：US16824069

申请日：2020-03-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Bassom ,  Neil Colvin ,  Tseh-Jen Hsieh ,  Michael Ameen

IPC: H01J37/08 ,  H01J37/30

Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

公开(公告)号：US20250116512A1

公开(公告)日：2025-04-10

申请号：US18892499

申请日：2024-09-22

Applicant: Axcelis Technologies, Inc.

Inventor： Phillip Geissbühler ,  FHM Faridur Rahman ,  Neil Bassom

IPC: G01B11/30

Abstract: A light source directs an incident beam at a surface of the workpiece on a stage at an oblique angle. A detector images a diffraction pattern of the incident beam reflected off the workpiece. At least one of a twist angle and a tilt angle of the workpiece on the stage is determined based on the diffraction pattern. The workpiece may be a semiconductor wafer and the stage may be, for example, part of an ion implanter.

公开(公告)号：US20250104965A1

公开(公告)日：2025-03-27

申请号：US18474402

申请日：2023-09-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/147

Abstract: A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

公开(公告)号：US20230139138A1

公开(公告)日：2023-05-04

申请号：US17514262

申请日：2021-10-29

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  H05H9/00

Abstract: An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.

公开(公告)号：US20210398765A1

公开(公告)日：2021-12-23

申请号：US17330801

申请日：2021-05-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Shu Satoh ,  Paul Silverstein ,  Marvin Farley

IPC: H01J1/02 ,  H01J1/52

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：US20200335302A1

公开(公告)日：2020-10-22

申请号：US16850066

申请日：2020-04-16

Applicant: Axcelis Technologies, Inc.

Inventor： Joshua Max Abeshaus ,  Neil Bassom ,  Camilla Lambert ,  Caleb Wisch ,  Kyle Hinds ,  Caleb Bell

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32

Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.