公开(公告)号：US20180138006A1

公开(公告)日：2018-05-17

申请号：US15350832

申请日：2016-11-14

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett ,  Neil Colvin

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/022 ,  H01J2237/038

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

公开(公告)号：US09543110B2

公开(公告)日：2017-01-10

申请号：US14135754

申请日：2013-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J27/20 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/082 ,  H01J2237/31705

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract translation: 用于离子注入系统的离子源室包括壳体，该壳体至少部分地界定电离区域，高能电子通过该电离区域从阴极移动到电离注入壳体内部的气体分子; 限定所述壳体内部的一个或多个内壁的衬里部分，其中每个衬里部分包括在所述离子注入系统的操作期间暴露于所述电离区域的面向内的表面; 围绕阴极设置的阴极屏蔽; 与阴极间隔开的推斥器; 包括用于从离子源室排出离子的源孔的板; 其中所述推斥板，所述衬套部分，所述阴极罩中的至少一个; 该板或限定源孔的板中的插入物包括碳化硅，其中碳化硅是具有过量碳的非化学计量烧结材料。