Abstract:
Methodology and circuitry for automatically effecting electronic camera movement to track and display the location of a moving object, such as a person presenting a talk to an audience. A fixed spotting camera (110) is used to capture a field of view, and a moving tracking camera (120) with pan/tilt/zoom/focus functions is driven (controller 520) to the present location of the moving object. Information for driving the tracking camera is obtained with reference to the pixel difference between a current image (300) and a previous image (200) within the field of view. A tracking algorithm computes the information necessary to drive the tracking camera from these pixel differences as well as data relative to the field of view of the spotting camera and the present tracking camera position.
Abstract:
A semiconductor optoelectronic device which can be used to perform the logical INVERTER or NOR operation. The device includes a surface-emitting laser (200) electrically coupled to a heterojunction phototransistor (240). When the total illumination intensity at the phototransistor is below a given threshold, the laser is in a lasing state; when the total illumination exceeds the threshold, the laser is in a non-lasing state. The phototransistor is operated at bias voltages below the threshold for avalanche effects.
Abstract:
A method of fusing together wafers (10, 30) or other semiconductor bodies comprising different semiconductors. In the case that wafers of InP and GaAs or other compound semiconductors are to be bonded, the wafers are cleaned with etchant, and their surfaces are placed together. While the wafers are forced together under moderate pressure and clean hydrogen flows over the wafers, the temperature is raised to 650 °C, close to the deposition temperature for epitaxial InP and the InP wafer is held at a slightly higher temperature. The annealing continues for 30 minutes. In the case that one wafer (68) is silicon, both wafers are assembled together in hydrofluoric acid, in which the two wafers bond together by van der Waals force. Then, the assembly is placed in a furnace and annealed at 650 °C. A sharp hetero-interface (32, 66, 70) is produced with only surface defects which do not propagate into the bulk. Either wafer may be preformed with a multi-layer opto-electronic structure (12).
Abstract:
A twisted ferroelectric liquid-crystal optical modulator in which a ferroelectric smectic C* liquid crystal (26) is filled into the gap between two alignment layers (18, 20) aligning the adjacent liquid crystal in two perpendicular directions parallel to the alignment layers. The ferroelectric liquid crystal has a tilt angle of 45° and is aligned with the tilt angle parallel to the buffing direction of the alignment layer. Thereby, the liquid-crystal molecules (32), absent any applied field from electrodes (14, 18), slowly twists through 90° across the gap, and the liquid crystal waveguides light linearly polarized by an input polarizer (22) so that it passes a perpendicularly arranged output polarizer (24). However, a strong electric field causes the ferroelectric molecules to untwist and line up in parallel, thereby destroying waveguiding, and the cell does not transmit. Intermediate voltages cause partial untwisting and partial waveguiding. Thus, variations in the applied voltages can modulate the light according to a gray scale.
Abstract:
A wideband transimpedance amplifier utilizing a differential amplifier circuit structure whereby the differential pair is bridged by a signal detector (50) which, as an example, would be a photodetector when the transimpedance amplifier is employed within an optical receiver. In order to bias the signal detector the differential pair is operated asymmetric with respect to the DC voltage but the circuit maintains a symmetric AC response to the signal detector current input. The circuit is designed to operate at the unity gain frequency. The signal detector is placed between the source (or emitter) electrodes (32) of the transistors (30) which helps to reduce the impact of gate (or base) capacitance on circuit response speed. These factors combined maximize the bandwidth capabilities of circuit. The circuit is responsive to a current input to produce two voltage outputs (15a and 15b) equal in magnitude but opposite in phase.
Abstract:
A reactive gas detection system provides early warning of gas emissions that often occur in developing fire conditions in environments such as telephone system central offices where halogenated substances, for example polyvinyl chloride wire insulation and brominated fire retardant materials are prevalent. Multiple microbalance detectors (122) comprising quartz crystal oscillators coated with a layer of zinc or zinc compound are distributed about a premises and the rate of change of crystal oscillation frequency is cyclically monitored by a frequency counter (130) under control of a data processor (112). Upon the occurrence of a significant threshold frequency change in any of the detectors, subsequent frequency measurements are preferentially taken at the suspect detector over an extended cycle period with high resolution to confirm that the threshold is being exceeded. Continued excessive excursion of measured frequency change beyond a preset limit initiates the generation of an alarm signal.
Abstract:
An arrangement of coupled hybrid rings (301 and 302) is disclosed which can withstand a failed node or a cut ring in either or both of the hybrid rings, as well as an outage of one of the two serving nodes utilized to interconnect the hybrid rings. The pair of serving nodes (330 and 340) are interposed in each of the hybrid rings and serve to transmit signals between the two rings to satisfy the hybrid ring requirement of having equivalent signals propagating in two opposing directions (e.g., 311 and 312) on the unidirectional rings composing an individual hybrid ring.
Abstract:
A method, and the resulting structure, of growing a superconducting perovskite thin film (34) of, for example, YBa2Cu3O7-x. A buffer layer (32) of, for example, the perovskite PrBa2Cu3O7-y, is grown on a crystalline (001) substrate (30) under conditions which favor growth of a,b-axis oriented material. Then the YBa2Cu3O7-x layer (34) is deposited on the buffer layer (32) under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110 DEG C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa2Cu3O7-x, whichnonetheless shows a superconducting transition temperature near that of c-axis oriented films.
Abstract:
In accordance with an inventive FEC code, data is transmitted in codewords comprising m-bit symbols. Of the n symbols, k symbols are known information symbols and h symbols are parity symbols for erasure correction. All of the symbols of the codeword are elements of a field of sm integers which is closed with respect to addition and multiplication such as a Galois field. To determine the h parity symbols, an encoder circuit (30) derives a matrix (90) corresponding to a set of simultaneous equations in terms of the k known information symbols and the h parity symbols. This set of equations is then solved for the h parity symbols so that a codeword is transmitted comprising k known information symbols and h parity symbols. At a decoder (30), the values of up to h erased symbols in the codeword may be reconstructed using a similar set of simultaneous equations.
Abstract:
A method for reconfiguring a telecommunications network (10) comprising a plurality of reconfigurable cross-connect nodes (A, B, C, D) interconnected by links (1 = 1, 2, 3, 4, 5) when a failure event occurs is disclosed. The method comprises storing at each node a precomputed configuration table corresponding to each of a plurality of possible network topologies which can result from a plurality of possible failure events. After a specific failure event occurs, the network is flooded with messages so that each of the nodes is informed as to the specific existing topology of the network resulting from the specific failure event. The nodes are then reconfigured in accordance with the precomputer configuration tables which correspond to the specific existing network topology.