AUTOMATIC TRACKING CAMERA CONTROL SYSTEM
    21.
    发明申请
    AUTOMATIC TRACKING CAMERA CONTROL SYSTEM 审中-公开
    自动跟踪摄像机控制系统

    公开(公告)号:WO1994017636A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000866

    申请日:1994-01-21

    Abstract: Methodology and circuitry for automatically effecting electronic camera movement to track and display the location of a moving object, such as a person presenting a talk to an audience. A fixed spotting camera (110) is used to capture a field of view, and a moving tracking camera (120) with pan/tilt/zoom/focus functions is driven (controller 520) to the present location of the moving object. Information for driving the tracking camera is obtained with reference to the pixel difference between a current image (300) and a previous image (200) within the field of view. A tracking algorithm computes the information necessary to drive the tracking camera from these pixel differences as well as data relative to the field of view of the spotting camera and the present tracking camera position.

    Abstract translation: 用于自动实现电子照相机运动以跟踪和显示移动物体(例如向观众呈现谈话的人)的位置的方法和电路。 使用固定的点样照相机(110)拍摄视野,并且将具有摇摄/倾斜/缩放/聚焦功能的移动跟踪相机(120)(控制器520)驱动到移动物体的当前位置。 参考视场内的当前图像(300)和先前图像(200)之间的像素差异获得用于驱动跟踪相机的信息。 跟踪算法计算从这些像素差异驱动跟踪摄像机所需的信息以及相对于点样摄像机的视野和当前跟踪摄像机位置的数据。

    LOW-TEMPERATURE FUSION OF DISSIMILAR SEMICONDUCTORS
    23.
    发明申请
    LOW-TEMPERATURE FUSION OF DISSIMILAR SEMICONDUCTORS 审中-公开
    二极管半导体的低温熔断

    公开(公告)号:WO1993013551A1

    公开(公告)日:1993-07-08

    申请号:PCT/US1992009080

    申请日:1992-10-21

    CPC classification number: H01L21/187

    Abstract: A method of fusing together wafers (10, 30) or other semiconductor bodies comprising different semiconductors. In the case that wafers of InP and GaAs or other compound semiconductors are to be bonded, the wafers are cleaned with etchant, and their surfaces are placed together. While the wafers are forced together under moderate pressure and clean hydrogen flows over the wafers, the temperature is raised to 650 °C, close to the deposition temperature for epitaxial InP and the InP wafer is held at a slightly higher temperature. The annealing continues for 30 minutes. In the case that one wafer (68) is silicon, both wafers are assembled together in hydrofluoric acid, in which the two wafers bond together by van der Waals force. Then, the assembly is placed in a furnace and annealed at 650 °C. A sharp hetero-interface (32, 66, 70) is produced with only surface defects which do not propagate into the bulk. Either wafer may be preformed with a multi-layer opto-electronic structure (12).

    TWISTED FERROELECTRIC LIQUID CRYSTAL MODULATOR
    24.
    发明申请
    TWISTED FERROELECTRIC LIQUID CRYSTAL MODULATOR 审中-公开
    TWISTED FERROELECTRIC液晶调制器

    公开(公告)号:WO1993009465A1

    公开(公告)日:1993-05-13

    申请号:PCT/US1992008334

    申请日:1992-10-01

    CPC classification number: G02F1/1396 G02F1/141 G02F1/216 G02F2203/30

    Abstract: A twisted ferroelectric liquid-crystal optical modulator in which a ferroelectric smectic C* liquid crystal (26) is filled into the gap between two alignment layers (18, 20) aligning the adjacent liquid crystal in two perpendicular directions parallel to the alignment layers. The ferroelectric liquid crystal has a tilt angle of 45° and is aligned with the tilt angle parallel to the buffing direction of the alignment layer. Thereby, the liquid-crystal molecules (32), absent any applied field from electrodes (14, 18), slowly twists through 90° across the gap, and the liquid crystal waveguides light linearly polarized by an input polarizer (22) so that it passes a perpendicularly arranged output polarizer (24). However, a strong electric field causes the ferroelectric molecules to untwist and line up in parallel, thereby destroying waveguiding, and the cell does not transmit. Intermediate voltages cause partial untwisting and partial waveguiding. Thus, variations in the applied voltages can modulate the light according to a gray scale.

    DIFFERENTIAL TRANSIMPEDANCE AMPLIFIER
    25.
    发明申请
    DIFFERENTIAL TRANSIMPEDANCE AMPLIFIER 审中-公开
    差分放大放大器

    公开(公告)号:WO1992019039A1

    公开(公告)日:1992-10-29

    申请号:PCT/US1992000995

    申请日:1992-02-05

    CPC classification number: H03F3/45394 H03F3/082

    Abstract: A wideband transimpedance amplifier utilizing a differential amplifier circuit structure whereby the differential pair is bridged by a signal detector (50) which, as an example, would be a photodetector when the transimpedance amplifier is employed within an optical receiver. In order to bias the signal detector the differential pair is operated asymmetric with respect to the DC voltage but the circuit maintains a symmetric AC response to the signal detector current input. The circuit is designed to operate at the unity gain frequency. The signal detector is placed between the source (or emitter) electrodes (32) of the transistors (30) which helps to reduce the impact of gate (or base) capacitance on circuit response speed. These factors combined maximize the bandwidth capabilities of circuit. The circuit is responsive to a current input to produce two voltage outputs (15a and 15b) equal in magnitude but opposite in phase.

    EARLY WARNING REACTIVE GAS DETECTION SYSTEM
    26.
    发明申请
    EARLY WARNING REACTIVE GAS DETECTION SYSTEM 审中-公开
    早期警告反应性气体检测系统

    公开(公告)号:WO1992015973A1

    公开(公告)日:1992-09-17

    申请号:PCT/US1992001449

    申请日:1992-02-26

    Abstract: A reactive gas detection system provides early warning of gas emissions that often occur in developing fire conditions in environments such as telephone system central offices where halogenated substances, for example polyvinyl chloride wire insulation and brominated fire retardant materials are prevalent. Multiple microbalance detectors (122) comprising quartz crystal oscillators coated with a layer of zinc or zinc compound are distributed about a premises and the rate of change of crystal oscillation frequency is cyclically monitored by a frequency counter (130) under control of a data processor (112). Upon the occurrence of a significant threshold frequency change in any of the detectors, subsequent frequency measurements are preferentially taken at the suspect detector over an extended cycle period with high resolution to confirm that the threshold is being exceeded. Continued excessive excursion of measured frequency change beyond a preset limit initiates the generation of an alarm signal.

    A DUAL-HUBBED ARRANGEMENT TO PROVIDE A PROTECTED RING INTERCONNECTION
    27.
    发明申请
    A DUAL-HUBBED ARRANGEMENT TO PROVIDE A PROTECTED RING INTERCONNECTION 审中-公开
    双层布置提供保护环互连

    公开(公告)号:WO1992004788A1

    公开(公告)日:1992-03-19

    申请号:PCT/US1991003156

    申请日:1991-05-07

    CPC classification number: H04L12/437

    Abstract: An arrangement of coupled hybrid rings (301 and 302) is disclosed which can withstand a failed node or a cut ring in either or both of the hybrid rings, as well as an outage of one of the two serving nodes utilized to interconnect the hybrid rings. The pair of serving nodes (330 and 340) are interposed in each of the hybrid rings and serve to transmit signals between the two rings to satisfy the hybrid ring requirement of having equivalent signals propagating in two opposing directions (e.g., 311 and 312) on the unidirectional rings composing an individual hybrid ring.

    GROWTH OF A,B-AXIS ORIENTED PEROVSKITE THIN FILMS
    28.
    发明申请
    GROWTH OF A,B-AXIS ORIENTED PEROVSKITE THIN FILMS 审中-公开
    A轴,双向轴向薄膜薄膜的生长

    公开(公告)号:WO1991019026A1

    公开(公告)日:1991-12-12

    申请号:PCT/US1991000726

    申请日:1991-02-04

    Abstract: A method, and the resulting structure, of growing a superconducting perovskite thin film (34) of, for example, YBa2Cu3O7-x. A buffer layer (32) of, for example, the perovskite PrBa2Cu3O7-y, is grown on a crystalline (001) substrate (30) under conditions which favor growth of a,b-axis oriented material. Then the YBa2Cu3O7-x layer (34) is deposited on the buffer layer (32) under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110 DEG C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa2Cu3O7-x, whichnonetheless shows a superconducting transition temperature near that of c-axis oriented films.

    Abstract translation: 一种制造例如YBa2Cu3O7-x的超导钙钛矿薄膜(34)的方法和所得到的结构。 在有利于b轴取向材料生长的条件下,在结晶(001)衬底(30)上生长例如钙钛矿PrBa2Cu3O7-y的缓冲层(32)。 然后,YBa2Cu3O7-x层(34)在改善的生长条件下沉积在缓冲层(32)上,该条件有利于衬底上c轴取向材料的生长,例如衬底温度升高到110℃。然而, 缓冲层用作迫使B轴YBa2Cu3O7-x的生长的模板,其然而在c轴取向膜附近显示超导转变温度。

    FORWARD ERROR CORRECTION CODE SYSTEM
    29.
    发明申请
    FORWARD ERROR CORRECTION CODE SYSTEM 审中-公开
    前向错误修正代码系统

    公开(公告)号:WO1991017503A1

    公开(公告)日:1991-11-14

    申请号:PCT/US1991000981

    申请日:1991-02-13

    CPC classification number: H03M13/17

    Abstract: In accordance with an inventive FEC code, data is transmitted in codewords comprising m-bit symbols. Of the n symbols, k symbols are known information symbols and h symbols are parity symbols for erasure correction. All of the symbols of the codeword are elements of a field of sm integers which is closed with respect to addition and multiplication such as a Galois field. To determine the h parity symbols, an encoder circuit (30) derives a matrix (90) corresponding to a set of simultaneous equations in terms of the k known information symbols and the h parity symbols. This set of equations is then solved for the h parity symbols so that a codeword is transmitted comprising k known information symbols and h parity symbols. At a decoder (30), the values of up to h erased symbols in the codeword may be reconstructed using a similar set of simultaneous equations.

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