Abstract:
PROBLEM TO BE SOLVED: To prevent thermal runaway in a compact type reaction apparatus for producing a desired fluid substance by a chemical reaction (catalyst reaction) of a fluidized substance mixture by using a catalyst installed in a narrow flow channel. SOLUTION: The first to the third substrates 1-3 are layered in this order and housed in the first and the second outer plates 4 and 5. A first radiation transmission suppression film 14 of Au and a second radiation transmission suppression film 15 of YH x ((x) is about 2) are formed in the inner faces of both outer plates 4 and 5. A first and a second temperature sensors 18 and 19 for monitoring thermal runaway are installed at prescribed two points in both outer plates 4 and 5. In the normal operation, since the first and the second radiation transmission suppression films 14 and 15 have approximately same radiation ability, both temperature sensors 18 and 19 detect the temperature of the outer faces of the both outer plates 4 and 5. In the case that thermal runaway occurs, since heat is transmitted only through the second radiation transmission suppression film 15, the temperatures detected by the temperature sensors 18 and 19 differ and based on it, a control circuit 20 transmits an emergency stop signal. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To operate a reformer in a high-temperature environment with reduced electric power supplied to a heating element which heats a fluid migration part. SOLUTION: A hydrogen-reforming unit 11 composing the reformer is equipped with the fluid migration part 20 which reforms a raw material to be reformed, the heating resistor 27 which heats the fluid migration part 20 and a vacuum container 60 which houses the fluid migration part 20. The interior (hollow part 61) of the vacuum container 60 is kept in a vacuum state by sucking internal air while heating the heating resistor 27. This enables operation of the hydrogen-reforming unit 11 in a high-temperature environment with reduced electric power supplied to the heating resistor 27. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a joined substrate forming a hardly peelabl Ta film, thereby improving the reliability of gas tightness with respect to an anodic joining, and to provide a reactor using the joined substrate. SOLUTION: The reactor 10 has a central glass substrate 30 on whose one surface a metal thin film 35 is formed and an upper glass substrate 20 anodically joined by the metal thin film 35. At least one portion of the metal thin film 35 is Ta and has a tetragonal crystal structure, wherein the space group belongs to P4 2 /mnm. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve reliability of an insulating film for insulating a thin-film heater from a radiation prevention film. SOLUTION: A reactor heating device 30 includes a thin-film heater 32 provided on the surface of a reactor 20, an insulating film 37 for covering the thin-film heater 32, and a radiation prevention film 38 provided on the insulating film 37. The insulating film 37 comprises crystalline RFeO 3 , wherein R is a rare earth element. The reactor forms the insulating film 37 with the coefficient of linear expansion equivalent to metal evenly by an application method, and generates no crack or peeling on the film even operated at a high temperature, thereby improving the reliability in electric insulation for insulating the thin film heater 32 from the radiation prevention film 38. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent mutual diffusion of an adhesion layer and a surface layer at high temperature. SOLUTION: This is a radiation prevention film 12 provided with the adhesion layer 13 formed on the surface of a reactor main body 10 and a surface layer 14 formed on the surface of the adhesion layer 13. The adhesion layer 13 consists of W or Mo and the surface layer 14 consists of Au. By using W, Mo as the adhesion layer, and using Au as the surface layer, mutual diffusion of these can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To produce a film which hardly causes peeling by improving oxidation resistance of a metal thin film that is used for anode bonding. SOLUTION: The bonding substrate is provided with a first glass substrate that is formed with a metal thin film on its one surface and with a second glass substrate that is anode bonded by the metal thin film. A part of the metal thin film that is not oxidized by the anode bonding comprises fine crystal having a body-centered cubic lattice structure of the main composition of the metal thin film, wherein the lattice constant of the fine crystal is smaller than the lattice constant of the bulk of the main composition. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a joining substrate capable of being certainly joined even between metals by anodic joining, and a joining method. SOLUTION: The joining substrate comprises a first metal substrate 1, an insulating glass film 3 formed on one side of the first metal substrate 1 to contains movable ions and a second metal substrate 4 anodically joined to the surface of the glass film 3. The movable ions are preferably alkali ions. Further, an electroconductive film is preferably composed of an oxide and more preferably has an amorphous structure. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a chemical reaction apparatus to be made further compact and thin by using a relatively economical substrate material and accomplishing good joint state by simple production process and a portable type power source system using the chemical reaction apparatus. SOLUTION: The chemical reaction apparatus (microreactor) has a mutually layered and bonded structure composed of a main substrate 10 such as glass (SiO 2 ) in which reaction channels 11 having a prescribed width and depth in one face side, an auxiliary substrate 20 such as glass (SiO 2 ) set face to face to the one face side of the main substrate 10 and having a thin film heater 30 having a prescribed plane shape and formed in the other face side, a joining oxide film 21a of tantalum silicide (TaSi) formed between the main substrate 10 and the auxiliary substrate 20. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a reactor provided with an apparatus, especially, a small heater capable of cooling a CPU and heating fuel in which heat exchange is performed by forming a path through which the fuel flows into the apparatus generating heat by the operation of an electric and electronic apparatus, and to provide the electric and electronic apparatus on which a fuel cell provided with the reactor. SOLUTION: In order to downsize an apparatus configuration with a reformer 17, the reactor is provided with: a heater 22 provided with a flow path for cooling the apparatus down by depriving the heat of the apparatus generating heat by the operation of the electric and electronic apparatus and heating the fuel so that it is served as both reforming materials reformed by the reformer 17 after heating the fuel efficiently and a cooling catalyst for cooling down the heating apparatus, and the reformer 17 provided with a reforming catalyst for reforming the fuel heated by the heater 22 to hydrogen. Also, the electric and electronic apparatus mounts the fuel cell. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an RHx compound having crystalline grains strongly oriented in a specified lattice plane and having little unstable hydrogen and impurities such as Y 2 O 3 . SOLUTION: The RHx compound (R represents one metal element in rare earth elements, H is hydrogen and (x) is 2 or around 2) has an FCC (face-centered cubic) structure and a crystalline structure showing high diffraction intensity on the (311) plane than the diffraction intensity on the (111) plane by X-ray diffraction pattern analysis. The RHx compound has the crystalline grains strongly oriented in the specified lattice plane and less unstable hydrogen which does not contribute to coupling in the intergranular space and hardly contains impurities such as Y 2 O 3 . COPYRIGHT: (C)2004,JPO