公开(公告)号：EP3568887A1

公开(公告)日：2019-11-20

申请号：EP18703254.5

申请日：2018-01-25

Applicant: Forschungsverbund Berlin E.V.

Inventor： KAUL, Thorben ,  ERBERT, Götz ,  CRUMP, Paul

IPC: H01S5/20 ,  H01S5/32

公开(公告)号：EP2467909B1

公开(公告)日：2016-07-20

申请号：EP10755118.6

申请日：2010-08-23

Applicant: Forschungsverbund Berlin E.V.

Inventor： ERBERT, Götz ,  SPREEMANN, Martin ,  WENZEL, Hans ,  FRICKE, Jörg

IPC: H01S5/125 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/125 ,  H01S5/1064 ,  H01S5/1089 ,  H01S5/1215 ,  H01S5/2036 ,  H01S2301/166

公开(公告)号：EP2467909A2

公开(公告)日：2012-06-27

申请号：EP10755118.6

申请日：2010-08-23

Applicant: Forschungsverbund Berlin E.V.

Inventor： ERBERT, Götz ,  SPREEMANN, Martin ,  WENZEL, Hans ,  FRICKE, Jörg

IPC: H01S5/125 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/125 ,  H01S5/1064 ,  H01S5/1089 ,  H01S5/1215 ,  H01S5/2036 ,  H01S2301/166

Abstract: The present invention relates to a diode laser and to a laser resonator for a diode laser having improved lateral beam quality without using an external resonator. The present invention in particular relates to a broad area laser having high power output. It is the aim of the present invention to provide a diode laser and a laser resonator for a diode laser, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR1) and a second planar Bragg reflector (DBR2), wherein the gain section (GS) has a trapezoidal design and the first planar Bragg reflector (DBR1) is arranged on a first base side of the trapezoidal gain section (GS) and the second planar Bragg reflector (DBR2) is arranged on the opposing base side of the trapezoidal gain section (GS), wherein the width (D1) of the first planar Bragg reflector (DBR1) differs from the width (D2) of the second planar Bragg reflector (DBR2).

公开(公告)号：EP3259811A1

公开(公告)日：2017-12-27

申请号：EP16704864.4

申请日：2016-02-18

Applicant: Forschungsverbund Berlin e.V.

Inventor： FRICKE, Jörg ,  DECKER, Jonathan ,  CRUMP, Paul ,  ERBERT, Götz

IPC: H01S5/10 ,  H01S5/042 ,  H01S5/12 ,  H01S5/22 ,  H01S5/50 ,  H01S5/20 ,  H01S5/022

CPC classification number: H01S5/1064 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/50

Abstract: The laser diode (10) of the invention has at least one active layer (12), which is arranged inside a resonator (14) and is operatively connected to a decoupling element (16), and, furthermore, at least one contact layer (18) for coupling charge carriers into the active layer (12), wherein the resonator (14) has at least a first section (20) and a second section (22), wherein the maximum width (W1) of the active layer (12) in the first section (20) differs from the maximum width (W2) of the active layer (12) in the second section (22), and a projection of the contact layer (18) along a first axis (
Z 1), extending perpendicularly with respect to the active layer (12), overlaps both with the first section (20) and with the second section (22). According to the invention there is provision that the second section (22) has a multiplicity of separate resistance elements (24), the specific electrical resistance of which is higher than the specific electrical resistance of the regions (26) between adjacent resistance elements (24), wherein a width (W3) of the resistance elements (24) along a longitudinal axis (X1) of the active layer (12) is less than 20 µm and a projection of the resistance elements (24) onto the active layer (12) along the first axis (Z1) overlaps with at least 10 % of the active layer (12).

公开(公告)号：EP2666213A1

公开(公告)日：2013-11-27

申请号：EP11813785.0

申请日：2011-12-28

Applicant: Forschungsverbund Berlin E.V.

Inventor： ERBERT, Götz ,  WENZEL, Hans ,  CRUMP, Paul

IPC: H01S5/20 ,  H01S5/32

CPC classification number: H01S5/2018 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/166 ,  H01S2301/18

Abstract: The present invention relates to a high-efficiency laser diode. The object of the present invention is to specify a laser diode with high efficiency, low optical losses and a low non-reactive resistance. Furthermore, it should be possible to produce the laser diode according to the invention inexpensively. The laser diode according to the invention has a first n-conducting sheath layer (14), a first n-conducting waveguide layer (12), which is arranged on the first sheath layer (14), an active layer (10), which is suitable for generating radiation and which is arranged on the first waveguide layer (12), a second p-conducting waveguide layer (16), which is arranged on the active layer (10), and a second p-conducting sheath layer (18), which is arranged on the second waveguide layer (16), wherein, according to the invention, the sum of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10) and the layer thickness of the second waveguide layer (16) is greater than 1 µm, and the layer thickness of the second waveguide layer (16) is less than 150 nm, wherein the active layer (10), the first sheath layer (14), the second sheath layer (18), the first waveguide layer (12) and the second waveguide layer (16) are formed in such a way that the maximum mode intensity of the fundamental mode (24) is in a region outside the active layer (10), and wherein the difference between the refractive index of the first waveguide layer (12) and the refractive index of the first sheath layer (14) is between 0.04 and 0.01.

公开(公告)号：EP2057720B1

公开(公告)日：2011-09-14

申请号：EP07802923.8

申请日：2007-08-27

Applicant: Forschungsverbund Berlin E.V.

Inventor： TRÄNKLE, Günther ,  ERBERT, Götz ,  KLEHR, Andreas ,  HOFMANN, Martin

IPC: H01S1/02

CPC classification number: H01S5/0265 ,  H01S1/02 ,  H01S5/026 ,  H01S5/1021 ,  H01S5/1092 ,  H01S5/30

Abstract: The invention relates to a device and a method for the generation of laser beams in the THz range. A semiconductor laser structure is provided, wherein a substrate (1) in a first region (7) along a longitudinal axis of waveguide layers is made of a first, semi-insulating substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz and in a second region (8) along said longitudinal axis is made of a second substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 Thz, wherein on the second jacket layer (6) in the second region of the substrate a layer (10) made of a third material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz is disposed. The side of the layer made of the third material facing away from the second jacket layer as well as the side of the second substrate material facing away from the first jacket layer (2) comprise a reflective layer (11).

公开(公告)号：EP2617110B1

公开(公告)日：2017-03-08

申请号：EP11766905.1

申请日：2011-09-12

Applicant: Forschungsverbund Berlin E.V.

Inventor： CRUMP, Paul ,  ERBERT, Götz ,  WENZEL, Hans

IPC: H01S5/22

CPC classification number: H01S5/20 ,  A61B18/203 ,  A61B2018/00476 ,  A61B2090/049 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3213 ,  H01S2301/185

公开(公告)号：EP2666213B1

公开(公告)日：2016-09-21

申请号：EP11813785.0

申请日：2011-12-28

Applicant: Forschungsverbund Berlin E.V.

Inventor： ERBERT, Götz ,  WENZEL, Hans ,  CRUMP, Paul

IPC: H01S5/20 ,  H01S5/32

CPC classification number: H01S5/2018 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/166 ,  H01S2301/18

公开(公告)号：EP2617110A2

公开(公告)日：2013-07-24

申请号：EP11766905.1

申请日：2011-09-12

Applicant: Forschungsverbund Berlin E.V.

Inventor： CRUMP, Paul ,  ERBERT, Götz ,  WENZEL, Hans

IPC: H01S5/22

CPC classification number: H01S5/20 ,  A61B18/203 ,  A61B2018/00476 ,  A61B2090/049 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3213 ,  H01S2301/185

Abstract: The present invention relates to a laser diode with high efficiency and high eye safety. The object of the present invention is to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (10), the first outer layer (14), the first waveguide layer (12), the second waveguide layer (16) and the second outer layer (18) are intended to be designed such that 0.01 μm ≤ d
wL ≤ 1.0 μm and Δn ≥ 0.04, where d
wL is the sum of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10) and the layer thickness of the second waveguide layer (16), and Δn is a maximum of the refractive-index difference between the first outer layer (14) and the first waveguide layer (12), and the refractive-index difference between the second waveguide layer (16) and the second outer layer (18).

公开(公告)号：EP2057720A1

公开(公告)日：2009-05-13

申请号：EP07802923.8

申请日：2007-08-27

Applicant: Forschungsverbund Berlin E.V.

Inventor： TRÄNKLE, Günther ,  ERBERT, Götz ,  KLEHR, Andreas ,  HOFMANN, Martin

IPC: H01S1/02

CPC classification number: H01S5/0265 ,  H01S1/02 ,  H01S5/026 ,  H01S5/1021 ,  H01S5/1092 ,  H01S5/30

Abstract: The invention relates to a device and a method for the generation of laser beams in the THz range. A semiconductor laser structure is provided, wherein a substrate (1) in a first region (7) along a longitudinal axis of waveguide layers is made of a first, semi-insulating substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz and in a second region (8) along said longitudinal axis is made of a second substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 Thz, wherein on the second jacket layer (6) in the second region of the substrate a layer (10) made of a third material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz is disposed. The side of the layer made of the third material facing away from the second jacket layer as well as the side of the second substrate material facing away from the first jacket layer (2) comprise a reflective layer (11).