Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having good pitch dependence and coverage dependence of CD and a resist pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin increasing the solubility in an alkali developer by the action of an acid, the resin containing a repeating unit (a) having a cyano group and a group decomposing by the action of an acid to be made alkali-soluble; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin having at least either a fluorine atom or a silicon atom and a group decomposing by the action of an alkali developer to increase the solubility in an alkali developer. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition allowing formation of a resist pattern, which is improved in elution of an acid, line edge roughness, reduction of development defects and scum generation, shows good followability for an immersion liquid in liquid immersion exposure, and further has various favorable performances in terms of particle suppression, a pattern profile and bubble defect prevention, and to provide a method of forming a pattern by using the actinic ray-sensitive or radiation-sensitive resin composition. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: resin (A) capable of increasing the solubility with an alkali developing solution by an action of an acid; and resin (C) having at least either a fluorine atom or a silicon atom and containing repeating unit (c) having at least two polarity conversion groups. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition useful to form a fine pattern in semiconductor manufacturing and remarkably reducing pattern collapse, development defects, liquid immersion defects (residual water defects, bubble defects) and scum, and a pattern forming method using the same. SOLUTION: The actinic ray- or radiation-sensitive resin composition is characterized in that a receding contact angle of water at a surface of a film formed of the actinic ray- or radiation-sensitive resin composition is ≥65°, and a receding contact angle of water at a surface of the film processed with an alkali developer is ≤35°. The pattern forming method using the same is also provided. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition, capable of forming a resist pattern improved in the elution of a generated acid, line edge roughness, development defects and generation of scums, less liable to profile degradation, and having proper conformability with an immersion liquid in immersion exposure, and to provide a pattern forming method that uses the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin, capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit, having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom. The pattern forming method that uses the composition is also provided.
Abstract:
PROBLEM TO BE SOLVED: To provide an active ray sensitive or radiation sensitive resin composition which allows formation of a pattern having good properties of PEBS (post exposure bake sensitivity), MEEF (mask error enhancement factor), coverage dependence and bridge defects, and to provide a method for forming a pattern by using the composition. SOLUTION: The composition includes (A) a resin the solubility of which with an alkali developing solution is increased by an action of an acid, (B) a compound generating an acid by irradiation with active rays or radiation, and (C) a resin, which contains a repeating unit having a polarity converting group that is decomposed by an action of an alkali developing solution to increase the solubility with an alkali developing solution, and which contains at least either a fluorine atom or a silicon atom, wherein the composition contains as the compound (B), a compound that generates an acid expressed by general formula (I) by irradiation with active rays or radiation. In general formula (I), each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom; R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or a group selected from alkyl groups substituted with at least one fluorine atom, and when a plurality of R 1 or R 2 are present, the respective groups may be identical or different from one another; L represents a divalent linking group and when a plurality of L are present, they may be identical or different from one another; A represents a group having a cyclic structure; x represents an integer of 1 to 20; y represents an integer of 0 to 10; and z represents an integer of 0 to 10. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a positive-working resist composition which has high sensitivity and satisfies both of pattern falling and variation in line width, and a method for pattern formation. SOLUTION: The positive-working resist composition uses a resin having a specific structure containing an acid decomposable group in its polymer main chain and having repeating units containing a plurality of specific acid decomposable groups. The method for pattern formation is also provided. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for refining isocyanurate compound capable of efficiently enhancing the concentration of a bifunctional isocyanurate compound useful as a sealant for a semiconductor light-emitting device in particular, to be independent of a complicated operation or time-consuming treatment, and to provide a method for producing sealant for the semiconductor light-emitting device using the method for refining isocyanurate compound, and also to provide a sealant for the semiconductor light-emitting device, a seal material for light semiconductor, and a light semiconductor element.SOLUTION: The method for producing the sealant for semiconductor light-emitting device containing isocyanurate compound includes treatment which enhances the mixing ratio of the compound represented by formula (II) for a raw material mixture containing a compound represented by the formula (II), a compound represented by formula (I) and a compound represented by formula (III) by undergoing at least a specific extraction process.
Abstract:
PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing a watermark defect and forming an excellently shaped resist pattern, and to provide a resist film using the same and a patterning method.SOLUTION: A resist composition contains: (A) a resin that dissolves by an action of acid whose solubility in an alkaline developer increases; an onium salt that is a compound generating acid by irradiation of activated ray or radioactive ray and that includes the general formula (I), or a bis (alkylsulfonyl) imide anion and a tris (alkylsulfonyl) methide anion; (C) a resin that includes at least one of a fluorine atom and a silicon atom; and a combined solvent that includes a first solvent and a second solvent at least one of which has a standard boiling point of 200°C or higher.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which reduces generation of development defects and scum and can form a pattern excellent in followability to immersion liquid during liquid immersion exposure, an actinic ray-sensitive or radiation-sensitive film formed from the composition, and a pattern formation method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition includes (A) a compound which generates an acid upon exposure to actinic rays or radiation, (B) a resin of which solution rate in an alkali developer increases by an action of acid, and (C) a hydrophobic resin which contains a repeating unit derived from a monomer represented by the following general formula (1). (Each symbol in the formula represents meaning described in claims).
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which is improved in developability and enables to form a pattern having good conformability to an immersion liquid in liquid immersion exposure, and a pattern forming method using the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes a resin (B) which includes at least either a fluorine atom or a silicon atom and has a repeating unit having a group represented by general formula (1) and at least one repeating unit having one group selected from the group of the following (x) to (z), wherein a single content of the repeating unit having one group selected from the group of the following (x) to (z) is ≥45 mol% relative to all repeating units in the resin: (x) an alkali-soluble group, (y) a group which is decomposed by the action of an alkali developer to thereby exhibit increased solubility in the alkali developer, and (z) a group which is decomposed by the action of an acid to thereby exhibit increased solubility in an alkali developer.