公开(公告)号：US11264470B2

公开(公告)日：2022-03-01

申请号：US16803711

申请日：2020-02-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Tamilmani Ethirajan ,  Zhenyu Hu ,  Tung-Hsing Lee

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/73 ,  H01L29/10 ,  H01L29/423

Abstract: One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.