公开(公告)号：JP2017092502A

公开(公告)日：2017-05-25

申请号：JP2017029950

申请日：2017-02-21

Applicant: 浜松ホトニクス株式会社 ,  Hamamatsu Photonics Kk

Inventor： FUJII YOSHIMARO ,  YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA

IPC: H01L31/10

Abstract: 【課題】シリコンフォトダイオードであって、近赤外の波長帯域に十分な分光感度特性を有しているフォトダイオードの製造方法を提供すること。【解決手段】n−型半導体基板1の第2主面1bにおける少なくともp+型半導体領域3に対向する領域に、パルスレーザ光を照射して、不規則な凹凸10を第2主面1bに光学的に露出させて形成する。ここでは、不規則な凹凸10の高低差が0.5〜10μmとなり、不規則な凹凸10における凸部の間隔が0.5〜10μmとなるように、不規則な凹凸10を形成する。n−型半導体基板1の第2主面1b側に、その表面が第2主面1bにおける不規則な凹凸10が形成された領域を含んでいるように、n−型半導体基板1よりも高い不純物濃度を有する第1導電型のアキュムレーション層11を形成する。【選択図】図20

公开(公告)号：JP2013065909A

公开(公告)日：2013-04-11

申请号：JP2013006062

申请日：2013-01-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  MIYAZAKI YASUTO ,  YONEDA YASUTO ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photo-detector, in which silicon is used and which has sufficient spectral sensitivity characteristics in the near-infrared wavelength band.SOLUTION: A semiconductor photo-detector SP1 is a surface-illuminated type and includes: a silicon substrate 21 that is composed of a first-conductivity-type semiconductor, has first and second primary surfaces 21a and 21b facing to each other, and in which a second-conductivity-type semiconductor layer 23 is formed on the first primary surface side 21a; and charge transfer electrodes 25 that are provided on the first primary surface 21a and transfer generated charges. A first-conductivity-type accumulation layer 31 having a higher impurity concentration than the silicon substrate 21 is formed on the second primary surface 21b side of the silicon substrate 21, and irregular unevenness 10 is formed in at least a region of the second primary surface 21b facing the semiconductor region 23. The region in which the irregular unevenness 10 is formed on the second primary surface 21b of the silicon substrate 21 is optically exposed.

Abstract translation: 要解决的问题：提供一种其中使用硅并且在近红外波长带中具有足够的光谱灵敏度特性的半导体光电检测器。 解决方案：半导体光电检测器SP1是表面照明型的，包括：由第一导电型半导体构成的硅基板21具有彼此面对的第一和第二主表面21a和21b， 并且在第一主表面侧21a上形成第二导电型半导体层23; 和设置在第一主表面21a上的电荷转移电极25，并传送产生的电荷。 在硅基板21的第二主面21b侧形成有比硅基板21高的杂质浓度的第一导电型堆积层31，在第二主面的至少一个区域形成有不规则的凹凸10 21b形成在半导体区域23上。在硅衬底21的第二主表面21b上形成不规则凹凸10的区域被光学曝光。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010226073A

公开(公告)日：2010-10-07

申请号：JP2009136419

申请日：2009-06-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  ISHIKAWA YOSHITAKA ,  KAWAI SATORU

IPC: H01L31/10 ,  H01L31/107

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/48091 ,  Y02E10/50 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide photodiode arrays that are silicon photodiode arrays and have sufficient spectral sensitivity characteristics in near-infrared wavelength bands. SOLUTION: The photodiode array PDA1 includes a substrate S, where a plurality of light detection channels CH include an n-type semiconductor layer 32. The photodiode array PDA1 includes: a p - -type semiconductor layer 33 formed on an n-type semiconductor layer 32; a resistor 24 that is provided for each light detection channel CH and has one edge connected to a signal conductor 23; and an n-type isolation section 40 formed among the plurality of light detection channels CH. The p - -type semiconductor layer 33 composes a pn junction on an interface to the n-type semiconductor layer 32, and includes a plurality of multiplication regions AM for performing avalanche multiplication of a carrier generated by incidence of light to be detected corresponding to the light detection channels. Irregularities 10 is formed on the surface of the n-type semiconductor layer 32, and the surface is exposed optically. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供作为硅光电二极管阵列的光电二极管阵列，并且在近红外波长带中具有足够的光谱灵敏度特性。 解决方案：光电二极管阵列PDA1包括基板S，其中多个光检测通道CH包括n型半导体层32.光电二极管阵列PDA1包括：光电二极管阵列PDA1，包括： 33形成在n型半导体层32上; 为每个光检测通道CH设置并具有连接到信号导体23的一个边缘的电阻器24; 以及形成在多个光检测通道CH之间的n型隔离部40。 p - 型半导体层33在与n型半导体层32的界面上形成pn结，并且包括多个乘法区AM，用于执行通过入射所产生的载流子的雪崩乘法 要被检测的光对应于光检测通道。 在n型半导体层32的表面上形成不规则性10，并且该表面被光学曝光。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010226072A

公开(公告)日：2010-10-07

申请号：JP2009136408

申请日：2009-06-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  MIYAZAKI YASUTO ,  YONEDA YASUTO ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

IPC: H01L31/10 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01L31/0236 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/103 ,  Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photodetector that uses silicon and has sufficient spectral sensitivity characteristics in near-infrared wavelength bands. SOLUTION: The semiconductor photodetector SP includes: a silicon substrate 21 that includes a first conductivity type semiconductor and has first and second main surfaces 21a, 21b opposing to each other and a second conductivity type semiconductor layer 23 formed at the side of the first main surface 21a; and a charge transfer electrode 25 that is provided on the first main surface 21a and transfers generated charges. On the silicon substrate 21, a first conductivity type accumulation layer 31, which has an impurity concentration higher than that of the silicon substrate 21, is formed at the side of the second main surface 21b, and irregularities 10 are formed in a region opposite to at least the semiconductor region 23 on the second main surface 21b. A region with the irregularities 10 formed on the second main surface 21b of the silicon substrate 21 is exposed optically. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用硅并且在近红外波长带中具有足够光谱灵敏度特性的半导体光电探测器。 解决方案：半导体光电检测器SP包括：硅衬底21，其包括第一导电类型半导体并且具有彼此相对的第一和第二主表面21a，21b，以及形成在第二导电类型半导体层 第一主表面21a; 以及设置在第一主表面21a上并传送产生的电荷的电荷转移电极25。 在硅衬底21上，在第二主表面21b侧形成杂质浓度高于硅衬底21的第一导电型蓄积层31，在与第二主表面21b相反的区域中形成不规则部分10。 至少在第二主表面21b上的半导体区域23。 具有形成在硅基板21的第二主表面21b上的不规则部分10的区域被光学曝光。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2013093609A

公开(公告)日：2013-05-16

申请号：JP2013006066

申请日：2013-01-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SAKAMOTO AKIRA ,  IIDA TAKASHI ,  YAMAMOTO AKINAGA ,  YAMAMURA KAZUHISA ,  NAGANO TERUMASA

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photodetection element using silicon and having spectral sensitivity characteristics sufficient for the near-infrared wavelength band.SOLUTION: A photodiode PD3 includes an n-type semiconductor substrate 1, and is back-illuminated type. The n-type semiconductor substrate 1 has a first principal surface 1a and a second principal surface 1b facing each other, and a P-type semiconductor region 3 is formed on the first principal surface 1a side. Irregular protrusions and recesses 10 are formed in at least a region facing the P-type semiconductor region 3 in the second principal surface 1b of the n-type semiconductor substrate 1. On the second principal surface 1b of the n-type semiconductor substrate 1, an accumulation layer 11 having an impurity concentration higher than that of the n-type semiconductor substrate 1 is formed. The region in the second principal surface 1b of the n-type semiconductor substrate 1 where the irregular protrusions and recesses 10 are formed is exposed optically.

Abstract translation: 要解决的问题：提供使用硅的半导体光电检测元件，并具有足够的近红外波长带的光谱灵敏度特性。 解决方案：光电二极管PD3包括n型半导体衬底1，并且是背照式的。 n - 型半导体衬底1具有彼此面对的第一主表面1a和第二主表面1b，并且P + SP>型半导体区域3形成在第一主表面1a侧。 在n 的第二主表面1b中的至少一个面对P + 型半导体区域3的区域中形成不规则的突起和凹陷部分10。 - 型半导体衬底1.在n - / SP>型半导体衬底1的第二主表面1b上，具有高于其的杂质浓度的积聚层11。 形成n

公开(公告)号：JP2013089918A

公开(公告)日：2013-05-13

申请号：JP2011232106

申请日：2011-10-21

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： NAGANO TERUMASA ,  HOSOKAWA NOBURO ,  SUZUKI TOMOHITO ,  BABA TAKASHI

IPC: H01L31/107

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: PROBLEM TO BE SOLVED: To provide a light detection device which can restrain temporal resolution from becoming different between pixels and also can further improve temporal resolution.SOLUTION: A semiconductor photodetector 10 includes a plurality of avalanche photodiodes APD operating in Geiger mode and formed in a semiconductor substrate 1N, a quenching resistor R1 connected in series to each of the avalanche photodiodes APD and disposed on a principal plane 1Na side of the semiconductor substrate 1N, and a plurality of through electrodes TE electrically connected to the quenching resistor R1 and formed through the semiconductor substrate 1N from the principal plane 1Na side to a principal plane 1Nb side. A mounting substrate 20 includes a plurality of electrodes E9 which are disposed on a principal plane 20a side corresponding one for one to each of the through electrodes TE. The through electrodes TE and the electrodes E9 are electrically connected via a bump electrode BE. A side face 1Nc of the semiconductor substrate 1N and a side face 30c of a glass substrate 30 are made to be flush with each other.

Abstract translation: 要解决的问题：提供一种能够抑制时间分辨率在像素之间变得不同的光检测装置，并且还可以进一步提高时间分辨率。 解决方案：半导体光电检测器10包括以Geiger模式操作并形成在半导体衬底1N中的多个雪崩光电二极管APD，与每个雪崩光电二极管APD串联连接并设置在主平面1Na侧的淬火电阻器R1 半导体衬底1N的多个贯通电极TE和与淬火电阻R1电连接并从主面1Na侧到主面1Nb侧通过半导体衬底1N形成的多个贯通电极TE。 安装基板20包括多个电极E9，其设置在主平面20a侧，对应于每个贯通电极TE中的一个。 贯通电极TE和电极E9通过凸块电极BE电连接。 使半导体基板1N的侧面1Nc和玻璃基板30的侧面30c彼此齐平。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013065910A

公开(公告)日：2013-04-11

申请号：JP2013006065

申请日：2013-01-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  ISHIKAWA YOSHITAKA ,  KAWAI SATORU

IPC: H01L31/107 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode and a photodiode array, which are a silicon photodiode and a silicon photodiode array respectively and have sufficient spectral response characteristics in a near-infrared wavelength band.SOLUTION: A photodiode PD5 includes a Ptype semiconductor substrate 20 and is a back-illuminated type. The Ptype semiconductor substrate 20 includes first and second principal surfaces 20a, 20b which face each other and a light sensitive region 21. The light sensitive region 21 includes an Ntype impurity region 23, a Ptype impurity region 25 and a region depleted when a bias voltage is applied in the Ptype semiconductor substrate 20. On the second principal surface 20b of the Ptype semiconductor substrate 20, an irregular convexoconcave shape 10 is formed. On the second principal surface 20b side of the Ptype semiconductor substrate 20, an accumulation layer 37 is formed and a region in the accumulation layer 37, which faces the light sensitive region 21 is optically exposed.

Abstract translation: 要解决的问题：分别提供作为硅光电二极管和硅光电二极管阵列的光电二极管和光电二极管阵列，并且在近红外波长带中具有足够的光谱响应特性。 解决方案：光电二极管PD5包括P - / SP>型半导体衬底20，并且是背照式。 P - 型半导体衬底20包括彼此面对的第一和第二主表面20a，20b以及光敏区21.光敏区21包括N + 型杂质区23，P + 型杂质区25以及在P - / SP>型半导体衬底20的第二主表面20b侧上，形成积累层37，并且在积聚层37中面向光敏区域21的区域 被光学曝光。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011023417A

公开(公告)日：2011-02-03

申请号：JP2009164915

申请日：2009-07-13

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  ISHIKAWA YOSHITAKA ,  KAWAI SATORU

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical detecting element which uses silicon and has practically sufficient spectral sensitivity characteristics only in a narrow wavelength band including the near infrared range, and to provide a method of manufacturing the semiconductor optical detecting element.
SOLUTION: A photodiode PD1 includes a silicon substrate 1. The silicon substrate 1 has an n
- -type semiconductor region 3 on the side of a first principal surface 1a and an n
+ -type semiconductor region 5 on the side of a second principal surface 1b. A p
+ -type semiconductor region 7 is provided in the n
- -type semiconductor region 3, and a pn junction is formed between the n
- -type semiconductor region 3 and p
+ -type semiconductor region 7. Irregular unevenness 11 is formed on the surface of the p
+ -type semiconductor region 7 (the first principal surface 1a of the silicon substrate 1). The surface of the p
+ -type semiconductor region 7 is optically exposed.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用硅的半导体光学检测元件，并且具有仅在包括近红外范围的窄波长带中具有实际上足够的光谱灵敏度特性，并提供制造半导体光学检测元件的方法。 解决方案：光电二极管PD1包括硅衬底1.硅衬底1在第一主表面1a侧具有n - SP>型半导体区3，并且n 型半导体区域5在第二主面1b侧。 在n - 型半导体区域3中设置p + 型半导体区域7，并且在n - / SP>型半导体区域3之间形成pn结 >型半导体区域3和p + 型半导体区域7.在p + 型半导体区域7（第一主体）的表面上形成不规则的凹凸11 硅衬底1的表面1a）。 p + 型半导体区域7的表面被光学曝光。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010226074A

公开(公告)日：2010-10-07

申请号：JP2009136426

申请日：2009-06-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  ISHIKAWA YOSHITAKA ,  KAWAI SATORU

IPC: H01L31/107

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: PROBLEM TO BE SOLVED: To provide photodiodes and photodiode arrays that are silicon photodiodes and silicon photodiode arrays and have sufficient spectral sensitivity characteristics in near-infrared wavelength bands. SOLUTION: A P - -type semiconductor substrate 20 includes first and second main surfaces 20a, 20b opposing each other, and a light sensitive region 21. The light sensitive region 21 includes an N + -type impurity region 23, a P + -type impurity region 25, and a region depleted when a bias voltage is applied in the P - -type semiconductor substrate 20. Irregularities 10 are formed on the second main surface 20b of the P - -type semiconductor substrate 20. An accumulation layer 37 is formed at the side of the second main surface 20b of the P - -type semiconductor substrate 20. A region opposite to the light sensitive region 21 in the accumulation layer 37 is exposed optically. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供作为硅光电二极管和硅光电二极管阵列的光电二极管和光电二极管阵列，并且在近红外波长带中具有足够的光谱灵敏度特性。 解决方案：AP - 型半导体衬底20包括彼此相对的第一和第二主表面20a，20b以及光敏区21.感光区21包括N + 型杂质区域23，P + 型杂质区域25，以及在P 型杂质区域25中施加偏置电压时耗尽的区域 半导体衬底20.在P 型半导体衬底20的第二主表面20b上形成不规则性10.在P 型半导体衬底20的第二主表面20b侧形成有堆积层37， SP> - 型半导体衬底20.与累积层37中的光敏区域21相对的区域被光学曝光。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2017117836A

公开(公告)日：2017-06-29

申请号：JP2015248641

申请日：2015-12-21

Applicant: 浜松ホトニクス株式会社 ,  Hamamatsu Photonics Kk

Inventor： YAMAMOTO AKINAGA ,  NAKAMURA SHIGEYUKI ,  NAGANO TERUMASA ,  SATO KENICHI

IPC: H01L27/146 ,  G01T1/20 ,  H01L27/144 ,  H01L31/107

Abstract: 【課題】幅広い光量レンジに対応し得る光電変換素子を提供する。【解決手段】光電変換モジュール2Aは、光電変換素子1A及び読出回路5Aを備える。光電変換素子1Aは、APDをそれぞれ含む複数のピクセル10と、複数のピクセル10に含まれる二以上のピクセル11と電気的に接続され、二以上のピクセル11からの出力電流を一括して取り出す配線21と、複数のピクセル10に含まれる二以上のピクセル12と電気的に接続され、二以上のピクセル12からの出力電流を一括して取り出す配線22とを備える。読出回路5Aは、配線21とGND線51との間に接続され、ピクセル11からの出力電流を電圧信号V1に変換する抵抗41と、配線22とGND線51との間に接続され、ピクセル12からの出力電流を電圧信号V2に変換する抵抗42とを有する。抵抗42の抵抗値は、抵抗41の抵抗値よりも小さい。【選択図】図4