公开(公告)号：JPH10144251A

公开(公告)日：1998-05-29

申请号：JP29518996

申请日：1996-11-07

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  SUGA HIROBUMI ,  YAMADA MASAMI

IPC: H01J1/32 ,  H01J31/50 ,  H01J43/04 ,  H01J43/10 ,  H01J43/22 ,  H01J43/24

Abstract: PROBLEM TO BE SOLVED: To provide a transmission type photoelectric surface and an electron tube, which multiplys secondary electrons with a high secondary electron generating efficiency, and can detect the position concerned. SOLUTION: The electron tube is equipped in the inside of its air tight container 12 with a negative electrode 18 formed out of a photo-electron emitting surface, a positive electrode 20 kept at positive in voltage with respect to the negative electrode 18, and with a transmission type secondary electron surface 30 which is interposed between the negative electrode 18 and the positive electrode 20, and efficiently secondary-electron-multiplys electrons from the negative electrode 20, the transmission type secondary electron surface 30 is provided with a multi-crystal diamond thin film 32, and with a reinforcing frame 34 reinforcing the stiffness of the thin film, and the positive electrode 20 possesses fluorescent body 22 which emits light by letting multiplied two dimensional electrons come in response to two dimensional electrons emitted from the negative electrode 18. In this constitution, since the multiplied two-dimensional electrons incident on the positive electrode 20 at each position corresponding to each position of the two dimensional electrons at the negative electrode 18, the two dimensional electrons from the negative electrode 18 can thereby be imaged.

公开(公告)号：JP2009295502A

公开(公告)日：2009-12-17

申请号：JP2008149583

申请日：2008-06-06

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： NEGI YASUHARU ,  MURAMATSU SHINICHI ,  YAMADA MASAMI ,  YAMAGUCHI AKIHIKO ,  GENMA TAKESHI

IPC: H01J9/12 ,  H01J40/16

Abstract: PROBLEM TO BE SOLVED: To provide an alkali metal generating source capable of stably heating an alkali metal member. SOLUTION: In this alkali metal generating source 1, a pellet 16 containing a raw material to generate alkali metal vapor is housed in a case 20. A ceramic substrate 18 on the back side 18b or in the inside of which a resistance heating part 21 is provided is housed in the case 20, and a current carrying pin 24 the base end part of which is fixed to the ceramic substrate 18 projects from the back side 18b of the ceramic substrate 18, The current carrying pin 24 is electrically connected to the resistance heating part 21, and the face 24a on the base end side is located in the further inside than the surface of the ceramic substrate 18. The pellet 16 is located on the surface 18a side of the ceramic substrate 18. By this structure, a current from the current carrying part 24 does not flow in the pellet 16, and flows only in the resistance heating part 21. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够稳定加热碱金属构件的碱金属发生源。 解决方案：在该碱金属发生源1中，将含有生成碱金属蒸气的原料的颗粒16容纳在壳体20中。背面18b或其内侧的陶瓷基板18具有电阻加热 设置在壳体20中的部分21，并且其基端固定在陶瓷基板18上的载流销24从陶瓷基板18的背面18b伸出。电流承载销24电连接 到电阻加热部21，基端侧的面24a位于比陶瓷基板18的表面更靠内侧的位置。颗粒16位于陶瓷基板18的表面18a侧。通过这种结构 来自电流承载部分24的电流不会流入颗粒16中，并且仅在电阻加热部分21中流动。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004165054A

公开(公告)日：2004-06-10

申请号：JP2002331142

申请日：2002-11-14

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： HIROHATA TORU ,  ARAGAKI MINORU ,  MOCHIZUKI TOMOKO ,  YAMADA MASAMI

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L29/06

CPC classification number: H01J1/34 ,  H01J2201/342

Abstract: PROBLEM TO BE SOLVED: To provide a photocathode capable of improving S/N ratio by restraining lowering of a spectral sensitivity when temperature is lowered. SOLUTION: A light-absorbing layer 12 is formed on a substrate 11, and an electron-emitting layer 13 is formed on the light-absorbing layer 12. A stripe-shaped contact layer 14 is formed on the electron-emitting layer 13, and a surface electrode 15 made of metal is formed on the frontal surface of the contact layer 14. A distance between protruded strings in the contact layer 14 is adjusted so that the distance L between a point farthest from the contact layer 14 on an exposed surface of the electron-emitting layer 13 and the contact layer 13 be 0.1 μm or more and 1 μm or less. COPYRIGHT: (C)2004,JPO

公开(公告)号：JPH11120899A

公开(公告)日：1999-04-30

申请号：JP28372997

申请日：1997-10-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  SUGA HIROBUMI ,  YAMADA MASAMI

IPC: H01J1/32

Abstract: PROBLEM TO BE SOLVED: To provide a secondary electron discharge device, for which secondary electron discharging efficiency is improved with good reproducibility, and to provide an electron gun using the device. SOLUTION: A support substrate 1 of a secondary electron discharge device 100 is made of Si or the like, and a polycrystalline diamond film 2 is formed thereon by microwave plasma CVD. At this stage, the polycrystalline diamond film 2 is doped with the impure material, so as to form a p-type conductive film. A surface of the polycrystalline diamond film 2 is hydrogen-terminated for forming a hydrogen terminal layer 3, and an active layer 4 of CsO is formed on the hydrogen terminal layer 3 for lowering the work function by alternately supplying Cs and O2 each other in vacuum.

公开(公告)号：JPH10223162A

公开(公告)日：1998-08-21

申请号：JP2063697

申请日：1997-02-03

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  SUGA HIROBUMI ,  YAMADA MASAMI

IPC: H01J31/12 ,  H01J1/30 ,  H01J1/32 ,  H01J29/04 ,  H01J43/22

Abstract: PROBLEM TO BE SOLVED: To provide a practicable electron tube which can make a field emission type electron-emitting source emit electrons stably and efficiently. SOLUTION: This electron tube is provided with a field emitter 20 which emits electrons by applying voltage, a transmission-type secondary electron surface 32, which emits secondary electrons from a surface different from a surface which the electrons enter by multiplying the number of electrons, and an anode formed with a fluorescent screen 22 which converts the secondary electrons into an optical image by incidence of the secondary electrons. The transmission type secondary electron surface 32 consists of diamond or material whose principal component is diamond, and involves electron affinity of zero or negative. Even in the case of the transmission-type secondary electron surface 32 whose structure is very simple, it is thus possible to generate the secondary electrons for converting them into an optical image, having practical brightness efficiently at the fluorescent screen 22, so as to attain stable operation of the field emitter 20.

公开(公告)号：JPH08255580A

公开(公告)日：1996-10-01

申请号：JP31683295

申请日：1995-12-05

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  SUZUKI TOMOKO ,  YAMADA MASAMI

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06

Abstract: PURPOSE: To improve photoelectric conversion efficiency by biasing voltage across a surface electrode of ohmic contact and a rear electrode, and applying inverse bias to a P-N junction between a contact layer and an electron emission layer. CONSTITUTION: A p type light absorbing layer 12 is formed on a p type semiconductor substrate 11, and a p type electron emission layer 13 of a III-V group compound semiconductor material is formed on the layer 12. Also, an n type contact layer 14 of a compound semiconductor material of the same group forming a P-N junction with the layer 13 is formed thereon. Furthermore, a surface electrode 15 in ohmic contact with the layer 14 is formed thereon. In this structure, bias voltage is applied across an electrode 15 and a reverse electrode 17 via a battery 18. As a result, inverse bias is applied to the P-N junction between the layers 14 and 13. Thus, a depletion layer is extended to a photoelectron emission surface, and electrical field is formed in the layers 13 and 12 in a direction for accelerating photoelectrons.

公开(公告)号：JPH08236015A

公开(公告)日：1996-09-13

申请号：JP3885295

申请日：1995-02-27

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  YAMADA MASAMI ,  KINOSHITA KATSUYUKI

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06

Abstract: PURPOSE: To provide a photoelectron emission plane with a small range of travel time to the emission plane and good time response. CONSTITUTION: A p-type light absorbing layer 12 and a p-type electron emission layer 13 are layered on a p-type transparent substrate 11 to form a hetero lamination layer structure for III-V group compound semiconductors. A Schottky electrode 15 and an ohmic electrode 16 are formed on the surface of the electron emission layer 13 and on the back of the transparent substrate 11, respectively. Sufficiently required voltage to form an electric field throughout the light absorbing layer 12 is applied between the Schottky electrode 15 and the ohmic electrode 16. A potential gradient is therefore formed throughout the light absorbing layer 12 to accelerate all photoelectrons excited by the light absorbing layer 12 when light is injected. In this way, all photoelectrons emitted from an emission plane 14 are accelerated electrons.

公开(公告)号：JPH0773801A

公开(公告)日：1995-03-17

申请号：JP21860993

申请日：1993-09-02

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  IHARA TSUNEO ,  YAMADA MASAMI

IPC: H01J1/34 ,  H01J43/08

Abstract: PURPOSE:To thin energy barrier, enhance photo-electric converting quantum efficiency, and provide a high-sensitivity photo-electron emission surface by forming an external electric field between the surface of a p-type semiconductor and a drawout electrode. CONSTITUTION:If light hnu is cast incident in the condition that the area between an ohmic contact 2 and a drawout electrode 4 is opened while the voltage VB is out of impression, energized photo-electrons (e) from the transmission belt of a p-type semiconductor 1 move from the bottom of the transmission belt to the emission surface. Among the photo-electrons (e), only those which have gone beyond the energy barrier between the level C of transmission belt and the vacuum level VL are released into the vacuum. When the voltage VB is impressed, on the other hand, the energized photo-electrons (e) flying from the bottom of the transmission belt reach the emission surface. At this time, an external electric field is formed between the surface S of semiconductor 1 and the drawout electrode 4, to cause that the level VL becomes much lower than the level CB and that the energy barrier between the emission surface and in the vacuum is thinned very much. Accordingly the photo-electrons (e) penetrate the thin energy barrier due to the tunnel effect and can run away easily into the vacuum.

公开(公告)号：JPH0750149A

公开(公告)日：1995-02-21

申请号：JP12006194

申请日：1994-06-01

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  KINOSHITA KATSUYUKI ,  HIROHATA TORU ,  IHARA TSUNEO ,  YAMADA MASAMI ,  ASAKURA NORIO ,  NEGI YASUHARU ,  SUZUKI TOMOKO

IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08

Abstract: PURPOSE:To provide a photoelectric cathode, a photoelectric tube, and a photo- detecting device having position resolution and high sensitivity. CONSTITUTION:The surface electrode 105 of a photoelectric cathode 1 is divided into a plurality of picture element electrode 1051-105n and photoelectrons generated inside can be emitted to the outside for only the picture elements applied with bias. The one-dimensional position resolution can be attained when picture elements are aligned in a one-dimensional array shape, and the two-dimensional position resolution can be attained when picture elements are aligned in a two-dimensional matrix. A photoelectric tube is provided with the photoelectric cathode in a vacuum container 21 and a bias switching control means of a plurality of picture element electrodes, and it has the one-dimensional or two-dimensional position resolution. A photo-detector is provided with the photoelectric tube, a power source, a timing control means, and a memory means, and the memory means stores the output of an anode in response to the position information of the picture element electrodes in the photoelectron emittable state.

公开(公告)号：JPH10172503A

公开(公告)日：1998-06-26

申请号：JP33708196

申请日：1996-12-17

Applicant: HAMAMATSU PHOTONICS KK

Inventor： ARAGAKI MINORU ,  HIROHATA TORU ,  SUGA HIROBUMI ,  YAMADA MASAMI

IPC: H01J43/20

Abstract: PROBLEM TO BE SOLVED: To provide a photomultiplier which can simultaneously reduce a size and a thickness. SOLUTION: A photomultiplier 10 comprises: an incident window 12; a reflection type photocathode 40 in which an electron excited by an incident light to be measured is emitted from an incident face of the light to be measured; a multiplier including a transmission type secondary electron face 30 interposed between the incident window 12 and the reflection type photocathode 40, for allowing the light to be measured from the incident window 12 to be transmitted and multiplying a secondary electron of the electron from the reflection type photocathode 40 side so as to emit it from the incident window 12 side; an anode 20 for collecting the electron multiplied by the transmission type secondary electron face 30 with application of a positive voltage to the reflection type photocathode 40; and a vacuum container 60 for sealing the reflection type photocathode 40, the transmission type secondary electron face 30 and the anode 20 and having the incident window 12 fixed thereto. Consequently, it is possible to provide the photomultiplier at a low cost, which can remarkably reduce the size of an electron orbit inside the vacuum container 60 and a secondary electron multiplier so as to simultaneously reduce a size and a thickness.