中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

40 records (took 0.024 seconds)

    ELECTRONIC DEVICE
    21.
    发明专利
    ELECTRONIC DEVICE 失效

    公开(公告)号：JPS56143983A

    公开(公告)日：1981-11-10

    申请号：JP4685180

    申请日：1980-04-11

    Applicant: HITACHI LTD

    Inventor： TANAKA MASASHI

    IPC: H04R17/10 ,  G04C21/02 ,  G04G13/02

    Abstract: PURPOSE:To reduce thickness and permit easy assembling, parts exchanging, etc. by the constitution consisting of housing a vibration diaphragm affixed with a piezoelectric element into the hole of a module. CONSTITUTION:A hole 13 is formed in part of a module 3, and the under side of the hole 13 is sealed and waterproofed by a rubber packing 14. Lead conductors 15 project to the inner side of the hole 13 in an eaves shape, and a rubber ring 16 of an H shape in section is fitted freely removably to these. A vibration diaphragm 8 affixed with a piezoelectric element 7 on the top surface is freely attachable and detachable fitted to the inside circumferential side of the rubber ring 16. The vibration diaphragm 8 is easily detached from the under side of the hole 13. As a result, good assembling characteristic is obtained and the vibration diaphragm 8 affixed with the element 7 is easily exchanged independently.

    SEMICONDUCTOR JUNCTION CAPACITOR DEVICE
    23.
    发明专利
    SEMICONDUCTOR JUNCTION CAPACITOR DEVICE 失效

    公开(公告)号：JPS5617051A

    公开(公告)日：1981-02-18

    申请号：JP9155579

    申请日：1979-07-20

    Applicant: HITACHI LTD

    Inventor： TANAKA MASASHI

    IPC: H01L27/04 ,  H01L21/822 ,  H01L29/92 ,  H01L29/93

    Abstract: PURPOSE:To reduce the voltage dependency of the semiconductor junction capacitor device by complementarily connecting the junction capacity obtained by forming a low specific resistance reverse conductivity type region at part of a high specific resistance one conductivity type substrate to the junction capacity obtained by forming one conductivity type low specific resistance region in a reverse conductivity type high specific resistance well formed in the other portion. CONSTITUTION:A P -type region 2 is diffused in a part of a surface layer of an N -type Si substrate 1 grounded when forming the semiconductor junction capacitor device to form a P -N junction 3 so as to obtain a junction capacitor C1. Then, a P -type well region 5 is diffused in the surface layer of the substrate 1 at the position separate therefrom, and is connected to a power supply, an N -type region 6 is formed in the region 5 to form an N -P junction capacitor C2. Thereafter, the regions 3 and 6 are commonly connected to the other power supply. Thus, two capacitors C1, C2 are operated complementarily to considerably improve the voltage dependency thereof.

    COMPLEMENTARY MIS OSCILLATOR CIRCUIT
    24.
    发明专利
    COMPLEMENTARY MIS OSCILLATOR CIRCUIT 失效

    公开(公告)号：JPS54125954A

    公开(公告)日：1979-09-29

    申请号：JP3307878

    申请日：1978-03-24

    Applicant: HITACHI LTD

    Inventor： TANAKA MASASHI

    IPC: H03K3/03 ,  H03K3/354 ,  H03K5/15

    Abstract: PURPOSE:To reduce the number of both the external resistance and the external terminal by securing a series connection between the external resistance and n/p channel MISFET and then utilizing the voltage-division output of these external resistance and the MISFET at the control voltage of the transmission gate. CONSTITUTION:For the compensating circuit of the ring oscillator, external resistance R is connected in series to n and p channel MISFETQ1 and Q2, and such circuit is provided that the voltage division output of the compensating circuit is used as the control voltage (base voltage) of transmission gate Q5, Q6, Q9 and Q10. And the output of the compensating circuit functions to suppress the change of the transcondactance of MISFET, and thus the ON-resistance value is compensated at the transmission gate to be constant. Thus, the dispersion of the oscillation frequency can be suppressed even though Q1, Q2, Q5, Q6, Q9 and Q10 which are formed within the same monolithic integrated circuit may receive the effect to the production dispersion and the temperature change. Furthermore, both the external resistance and the external terminal suffice with just one unit each, and so the occupied area can be reduced to the whole IC.

    FILE BACKUP METHOD
    27.
    发明专利
    FILE BACKUP METHOD 失效

    公开(公告)号：JPH0496838A

    公开(公告)日：1992-03-30

    申请号：JP21530290

    申请日：1990-08-15

    Applicant: HITACHI LTD ,  HITACHI COMPUTER ENG ,  HITACHI COMPUTER ELECTRONIC

    Inventor： FUSE MASAHIRO ,  MURAI YASUO ,  KOMATSU TAKAHIRO ,  ENOMOTO YOSHIHISA ,  TANAKA MASASHI

    IPC: G06F12/00

    Abstract: PURPOSE:To back up a file together with related files of the corresponding generation by referring to a storage means to simultaneously back up files related to an update file at the time of updating the file. CONSTITUTION:A user program 21 registers the update file name in an update file name register file 23 simultaneously with updating of a file (c) 33. An update file backup control program 22 reads the file 24 to obtain the update file name and obtains backup file names (a) 31 to (c) 33 corresponding to the update file name from a register file 25 of file names to be backed up simultaneously with update. Files (a) 31 to (c) 33 are read in from a file group 30 based on backup file names (a) 31 to (c) 33 and are outputted to a file backup medium 23. Thus, the file is returned to the state of several generations before at a time.

    DIGITAL CONTROLLING CIRCUIT
    29.
    发明专利
    DIGITAL CONTROLLING CIRCUIT 失效

    公开(公告)号：JPS56153973A

    公开(公告)日：1981-11-28

    申请号：JP5540380

    申请日：1980-04-28

    Applicant: HITACHI LTD

    Inventor： TANAKA MASASHI

    IPC: H02M3/07 ,  H02M3/06

    Abstract: PURPOSE:To improve the mass productivity by modifying a wiring pattern in accordance with applying voltage to raise or reduce the voltage and thus forming a monolithic semiconductor circuit responsive to the voltage specification. CONSTITUTION:When a battery E is low voltage, a terminal T1 is connected to the voltage supply circuit terminal T2 of a voltage rising circuit 4 and to the voltage supply circuit terminal T7 of an information processing circuit 2, and the raised voltage output terminal T3 is connected to the voltage supply circuit terminal T6 of a display circuit 3 as indicated by broken lines. When the battery E is high voltage, the terminal T1 is connected to the voltage supply circuit terminal T4 of a voltage falling circuit 5 and to the terminal T6, and the dropped voltage output terminal T5 is connected to the terminal T7 instead of the connection designated by the broken lines. Thus, the predetermined wiring pattern is modified, thereby forming all the voltage rising or falling circuit, and a necessary power voltage can be obtained.

Patent Agency Ranking