VERWENDEN EINES SPURFORMATCODES IN EINEM CACHE-STEUERBLOCK FÜR EINE SPUR IN EINEM CACHE, UM LESE- UND SCHREIBANFORDERUNGEN IN BEZUG AUF DIE SPUR IM CACHE ZU VERARBEITEN

    公开(公告)号:DE112018002951T5

    公开(公告)日:2020-04-02

    申请号:DE112018002951

    申请日:2018-07-19

    Applicant: IBM

    Abstract: Bereitgestellt werden ein Computerprogrammprodukt, ein System und ein Verfahren zum Verwenden eines Spurformatcodes in einem Cache-Steuerblock für eine Spur in einem Cache, um Lese- und Schreibanforderungen in Bezug auf die Spur im Cache zu verarbeiten. Eine Spurformattabelle ordnet Spurformatcodes zu Spurformatmetadaten zu. Es wird eine Ermittlung vorgenommen, ob die Spurformattabelle Spurformatmetadaten aufweist, die mit Spurformatmetadaten einer in den Cache verlagerten Spur übereinstimmen. Es wird eine Ermittlung vorgenommen, ob ein Spurformatcode aus der Spurformattabelle für die Spurformatmetadaten in der Spurformattabelle mit Spurformatmetadaten der verlagerten Spur übereinstimmt. Für die Spur, die zum Cache hinzugefügt wird, wird ein Cache-Steuerblock erzeugt, der den ermittelten Spurformatcode beinhaltet, wenn die Spurformattabelle die übereinstimmenden Spurformatmetadaten aufweist.

    Nonvolatile storage thresholding for ultra-SSD, SSD, and HDD drive intermix

    公开(公告)号:GB2522742A

    公开(公告)日:2015-08-05

    申请号:GB201419680

    申请日:2014-11-05

    Applicant: IBM

    Abstract: Embodiments for efficient thresholding of nonvolatile storage (NVS) for a plurality of types of storage rank groups by a processor. Target storage devices are determined in a pool of target storage devices as one of a hard disk drive (HDD) and a solid-state drive (SSD) device. Each target storage device classified into an SSD rank group, a Nearline rank group, an Enterprise rank group, and an Ultra-SSD rank group in the pool of target storage devices. The Nearline rank group and the Enterprise rank group comprise a HDD rank group, and the Nearline rank group, the Enterprise rank group, and the SSD rank group comprise the Non­Ultra-SSD rank group. Thresholds are adjusted for preventing space allocation in the NVS for at least one of the classified target storage devices based on one of the presence and absence of identified types of the classified target storage devices.

    MEMORIES AND THE TESTING THEREOF
    24.
    发明专利

    公开(公告)号:HK35392A

    公开(公告)日:1992-05-29

    申请号:HK35392

    申请日:1992-05-21

    Applicant: IBM

    Abstract: A memory may contain a large number of bytes of data perhaps as many as 256 megabytes in a typical large memory structure. An error correcting code algorithm may be used to identify failing memory modules in a memory system. In a particular embodiment, a number of spares may be provided on each memory card allowing a predetermined number of defective array modules to be replaced in a storage word. With double bit correction provided by the error correcting code logic, a number of bits can be corrected on a card or a larger number of bits can be corrected on a card pair, where the larger number of bits is somewhat less than double the number of bits which can be corrected on a single card. The address test in accordance with the present invention then produces a pattern that will create a difference greater than that larger number of bits between the data stored in a storage location under test and any address that could be accessed by an address line failure. The method according to the present invention predicts the effect of an address line failure external to the array modules and internal to a card pair and then tests to see if a failure has occurred. The address test does not declare an address failure until a predetermined number of bit failures on a card is found. The test is valid for single and multiple address line failures. Since only one address bit is changed for each path through the test other failing address lines will not be detected until the path with those failing address bits are tested. Thus, even with multiple address line failure the two addresses that are stored to and fetched from are the only one address bit apart.

    MEMORIES AND THE TESTING THEREOF
    25.
    发明专利

    公开(公告)号:GB2201016B

    公开(公告)日:1991-03-13

    申请号:GB8719405

    申请日:1987-08-17

    Applicant: IBM

    Abstract: A memory may contain a large number of bytes of data perhaps as many as 256 megabytes in a typical large memory structure. An error correcting code algorithm may be used to identify failing memory modules in a memory system. In a particular embodiment, a number of spares may be provided on each memory card allowing a predetermined number of defective array modules to be replaced in a storage word. With double bit correction provided by the error correcting code logic, a number of bits can be corrected on a card or a larger number of bits can be corrected on a card pair, where the larger number of bits is somewhat less than double the number of bits which can be corrected on a single card. The address test in accordance with the present invention then produces a pattern that will create a difference greater than that larger number of bits between the data stored in a storage location under test and any address that could be accessed by an address line failure. The method according to the present invention predicts the effect of an address line failure external to the array modules and internal to a card pair and then tests to see if a failure has occurred. The address test does not declare an address failure until a predetermined number of bit failures on a card is found. The test is valid for single and multiple address line failures. Since only one address bit is changed for each path through the test other failing address lines will not be detected until the path with those failing address bits are tested. Thus, even with multiple address line failure the two addresses that are stored to and fetched from are the only one address bit apart.

    EFFICIENT ADDRESS TEST FOR LARGE MEMORIES

    公开(公告)号:AU597140B2

    公开(公告)日:1990-05-24

    申请号:AU1035688

    申请日:1988-01-18

    Applicant: IBM

    Abstract: A memory may contain a large number of bytes of data perhaps as many as 256 megabytes in a typical large memory structure. An error correcting code algorithm may be used to identify failing memory modules in a memory system. In a particular embodiment, a number of spares may be provided on each memory card allowing a predetermined number of defective array modules to be replaced in a storage word. With double bit correction provided by the error correcting code logic, a number of bits can be corrected on a card or a larger number of bits can be corrected on a card pair, where the larger number of bits is somewhat less than double the number of bits which can be corrected on a single card. The address test in accordance with the present invention then produces a pattern that will create a difference greater than that larger number of bits between the data stored in a storage location under test and any address that could be accessed by an address line failure. The method according to the present invention predicts the effect of an address line failure external to the array modules and internal to a card pair and then tests to see if a failure has occurred. The address test does not declare an address failure until a predetermined number of bit failures on a card is found. The test is valid for single and multiple address line failures. Since only one address bit is changed for each path through the test other failing address lines will not be detected until the path with those failing address bits are tested. Thus, even with multiple address line failure the two addresses that are stored to and fetched from are the only one address bit apart.

    MEMORIES AND THE TESTING THEREOF
    27.
    发明专利

    公开(公告)号:GB2201016A

    公开(公告)日:1988-08-17

    申请号:GB8719405

    申请日:1987-08-17

    Applicant: IBM

    Abstract: A memory may contain a large number of bytes of data perhaps as many as 256 megabytes in a typical large memory structure. An error correcting code algorithm may be used to identify failing memory modules in a memory system. In a particular embodiment, a number of spares may be provided on each memory card allowing a predetermined number of defective array modules to be replaced in a storage word. With double bit correction provided by the error correcting code logic, a number of bits can be corrected on a card or a larger number of bits can be corrected on a card pair, where the larger number of bits is somewhat less than double the number of bits which can be corrected on a single card. The address test in accordance with the present invention then produces a pattern that will create a difference greater than that larger number of bits between the data stored in a storage location under test and any address that could be accessed by an address line failure. The method according to the present invention predicts the effect of an address line failure external to the array modules and internal to a card pair and then tests to see if a failure has occurred. The address test does not declare an address failure until a predetermined number of bit failures on a card is found. The test is valid for single and multiple address line failures. Since only one address bit is changed for each path through the test other failing address lines will not be detected until the path with those failing address bits are tested. Thus, even with multiple address line failure the two addresses that are stored to and fetched from are the only one address bit apart.

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