公开(公告)号：DE1137512B

公开(公告)日：1962-10-04

申请号：DEJ0018357

申请日：1960-06-28

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: C30B19/04 ,  C30B19/10 ,  C30B25/02 ,  C30B25/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/363 ,  H01L29/00

Abstract: 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.