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    Thin magnetic film storage cell
    22.
    发明专利
    Thin magnetic film storage cell 未知

    公开(公告)号：GB1083071A

    公开(公告)日：1967-09-13

    申请号：GB25666

    申请日：1966-01-04

    Applicant: IBM

    Inventor： MIDDELHOEK SIMON

    IPC: H01F10/10

    Abstract: 1,083,071. Magnetic storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. Jan. 4, 1966 [Feb. 23, 1965], No. 256/66. Heading H3B. [Also in Division H1] A magnetic thin film storage unit comprises a continuous anisotropic film 70 (Fig. 7) of magnetic material having magnetically hard and soft zones 73, 74, the hard zones requiring a stronger magnetic field to turn their remanent magnetization into the hard direction than the soft zones, the arrangement being such that, in operation, a magnetic coupling field exists between the hard and soft zones tending to maintain their magnetization in the easy direction in the same sense. A read-out field of suitable magnitude in the hard direction produced by a current in a word line (82-1), (Fig. 8a, not shown), will then rotate the magnetization of the soft zones in the associated magnetic films (81A-1, 81B-1, 81-C 1 , 81-D 1 ) of a " read-only " store into the hard direction producing output pulses in sense lines (83A, 83B, 83C, 83D) and their associated sense amplifiers. On cessation of the read-out pulse the magnetization in the soft zones is restored to its original easy direction by the coupling fields of the hard zones. Relatively, heavy hard direction fields are used with the bit fields for write-in. The hard zones may be produced in the magnetic film by depositing 500 Š thick film strips 72 of 60% Co, 40% Ni across the film in the hard direction or by diffusing copper or aluminium into selected portions of the film. Alternatively, parts of the film (90), (Fig. 9, not shown), may be covered with areas (95) of SiO and a continuous high coercivity Co-Ni film (92) deposited over all. The hard zones may also be formed by roughening appropriate areas of the polished substrate by depositing thereon thin (200 Š) discontinuous films (102), )Fig. 10, not shown), of silver or aluminium or by etching or mechanically.

    Magnetic film store
    25.
    发明专利
    Magnetic film store 未知

    公开(公告)号：GB1079500A

    公开(公告)日：1967-08-16

    申请号：GB5230364

    申请日：1964-12-02

    Applicant: IBM

    Inventor： CHANG HSU ,  MEE CHARLES DENIS ,  MIDDELHOEK SIMON ,  VOEGELL OTTO

    IPC: G11C7/02 ,  G11C11/14 ,  G11C11/15 ,  H01F10/30

    Abstract: 1,079,500. Circuits employing bi-stable magnetic elements. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 23, 1964 [Jan. 13, 1964], No. 52303/64. Heading H3B. [Also in Division H1] In a magnetic uniaxial film element store in which information is stored by magnetizing the film along one direction or the other along the easy axis, the film element having an associated range or associated ranges of values of magnetization along the hard axis variation within which can cause, by a creeping action, the switching or destruction of the stored information, the element is subjected to a disturb magnetic field which acts along the hard axis and varies within the range or a range and a bias magnetic field along the hard axis, the resultant of the bias and disturbs fields lying outside the associated range or ranges. It is stated that wall creeping is produced in both thick and thin magnetic films when the films are subjected to alternating fields in the hard direction of value 0À2 H K to 0À3 H K for thick films and 0À3 H K to 0 for thin films, Figs. 3, 4 (not shown). Since in word orientated memory systems the word field in a selected word or line can produce a strong disturb field in the hard direction in the elements of lines adjacent to the selected word these elements may be switched. In accordance with the invention an electrical conductor or strip 50 is disposed over ground plane 12À1 to cover the film elements 10 and the current therethrough from battery 56 is adjusted by resistor 54 so as to provide a magnetic field 32À1 in the hard direction and having a value at least 0À2 H K but not greater than 0À3 H K . Storage in the film is by passing a current of the appropriate polarity through the selected word line 18À1, 18À2, 18À3 coincidently with a current through the selected bit conductor 16À1, 16À2, 16À3. Read-out is by energization of the selected word line 18 such that the field produced thereby is less than H K to enable non-destructive read-out. When thin films are employed the bias field must be in the direction of the disturb fields which is possible in the application of the invention to a magnetic store since a unipolar word drive pulse is employed. If thick films are employed, i.e. greater than 900 Angstroms, the hard axis bias field may be in or against the direction of the disturb fields provided the disturb fields are approximately 0À6 H K . Random fields may be eliminated by shielding. In the arrangement of Fig. 6 (not shown) the strip conductor of Fig. 5 is replaced by a Helmholtz coil arrangement. The bit and drive lines need not be orthogonal.

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