公开(公告)号：JP2003258246A

公开(公告)日：2003-09-12

申请号：JP2002055931

申请日：2002-03-01

Applicant: IBM

Inventor： NAKAMURA TAKASHI

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/30 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To inexpensively supply deuterium to a field-effect transistor so that the deuterium may be supplied to a set depth with accuracy in a process of supplying the deuterium to the transistor. SOLUTION: A method of manufacturing the field-effect transistor comprises a step of forming an oxide film 14 on a silicon substrate 12, a step of forming a polysilicon electrode film 16 on the oxide film 14, and a step of supplying deuterium ions to the interface between the oxide film 14 and silicon substrate 12 through the polysilicon electrode film 16 by means of an ion implanter. COPYRIGHT: (C)2003,JPO