公开(公告)号：DE69902422D1

公开(公告)日：2002-09-12

申请号：DE69902422

申请日：1999-05-13

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: H01F41/18 ,  C23C14/04 ,  C23C14/34 ,  C23C14/46 ,  G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01J37/317 ,  H01L21/203 ,  H01L43/12 ,  G11B5/84

Abstract: An ion beam sputtering system (500) having a chamber (522), an ion beam source (521), multiple targets (523), a shutter (510), and a substrate stage (541) for securely holding a wafer (531) substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.

公开(公告)号：GB2351597A

公开(公告)日：2001-01-03

申请号：GB0009809

申请日：2000-04-25

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/31 ,  G01R33/09 ,  G11B5/012 ,  G11B5/39

Abstract: A bilayer interlayer comprising first and second layers of cobalt iron (CoFe) and nickel iron (NiFe) respectively is located between a nickel oxide pinning layer and a cobalt iron (CoFe) pinned layer structure of a spin valve sensor. The pinned layer structure may be an antiparallel (AP) pinned layer structure or a single pinned layer of cobalt iron (CoFe). The bilayer interlayer reduces the coercivity of the cobalt iron (CoFe) pinned layer structure so that a magnetic moment of the pinned layer structure is returned to its original position by exchange coupling with the pinning layer when the magnetic moment is rotated to some direction other than the pinned direction. The spin valve sensor manifests an improved magnetoresistive coefficient (dr/R) and thermal stability.

公开(公告)号：CA2340094A1

公开(公告)日：2000-06-15

申请号：CA2340094

申请日：1999-11-26

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12

Abstract: A bottom spin valve sensor employs a seed layer (201) for a nickel oxide (Ni O) antiferromagnetic pinning layer (212) for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simpl e spin valve or an antiparallel (AP) spin valve sensor. The seed layer is tantalum oxide TayOx or copper (Cu).

公开(公告)号：CA2142377A1

公开(公告)日：1995-10-22

申请号：CA2142377

申请日：1995-02-13

Applicant: IBM

Inventor： GILL HARDAYAL S ,  PINARBASI MUSTAFA

IPC: G11B5/39 ,  G01R33/09

Abstract: A dual element magnetoresistive (MR) sensor is disclosed comprising two MR elements separated by a high resistivity conductive spacer material. A layer of hard bias material, which abuts one of the MR elements at each of its track edges, has a magnetization times thickness value substantially matched to that of the one MR element to bias it in one longitudinal direction. An exchange bias layer biases the other MR element by exchange coupling in an opposite longitudinal direction to achieve magnetic stabilization between the MR elements. The exchange bias layer abuts the other MR element at each of its track edges and has a magnetization times thickness value substantially matched to that of the other MR element. Alternatively, the exchange bias layer extends from one track edge to an opposite track edge in continuous underlying or overlying contact with the other MR element.

公开(公告)号：HU0104477A2

公开(公告)日：2002-03-28

申请号：HU0104477

申请日：1999-11-26

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12

Abstract: A bottom spin valve sensor employs a seed layer for a nickel oxide (NiO) antiferromagnetic pinning layer for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve or an antiparallel (AP) spin valve sensor. In the preferred embodiment the seed layer is tantalum oxide Ta y O x or copper (Cu).

公开(公告)号：GB2349735A

公开(公告)日：2000-11-08

申请号：GB0007168

申请日：2000-03-27

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/39 ,  G11B20/10 ,  H01F10/14 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: A read head for a disc drive comprising a spin valve sensor consisting of a multi layered antiparallel pinned structure with the following layers: An antiferromagnetic pinning layer(214), a nickel-iron (Ni-Fe) coupling layer (216), a first cobalt-iron (Co-Fe) antiparallel ferromagnetic pinned layer (210), a ruthenium (Ru) anti parallel coupling layer (208), a second cobalt-iron(Co-Fe) antiparallel ferromagnetic pinned layer (212), a non-magnetic electrically conductive spacer layer (202) and finally a ferromagnetic free layer (206). The first AP ferromagnetic layer is pinned by the antiferromagnetic layer in one direction and the second AP ferromagnetic layer is pinned by the first AP ferromagnetic layer in the opposite direction.

公开(公告)号：SG71855A1

公开(公告)日：2000-04-18

申请号：SG1998004228

申请日：1998-10-20

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/012 ,  G11B5/39

Abstract: An AP-Pinned SV sensor with the preferred structure of NiO/Ni-Fe/Co/Ru/Co/Cu/Ni-Fe/Cap where the pinned layer comprises first and second ferromagnetic pinned layers separated from each other by an anti-parallel coupling layer. The first ferromagnetic pinned layer further comprises a first pinned sub-layer of Ni-Fe and a second pinned sub-layer of Co where the first pinned sub-layer of Ni-Fe is formed over and in direct contact with the NiO antiferromagnetic (AFM) layer. Addition of the first pinned sub-layer of Ni-Fe isolates the second pinned sub-layer of Co from the NiO AFM layer resulting in dramatic improvement in the pinning field and magnetic moment control of the laminated AP-pinned layer.

公开(公告)号：SG32325A1

公开(公告)日：1996-08-13

申请号：SG1995000112

申请日：1995-03-16

Applicant: IBM

Inventor： GILL HARDAYAL SINGH ,  PINARBASI MUSTAFA

IPC: G01R33/09

公开(公告)号：GB2285331A

公开(公告)日：1995-07-05

申请号：GB9425141

申请日：1994-12-13

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistive head comprising a multi-layer thin film device on a substrate 40 has a material which is inert with respect to the soft film magnetic biasing layer 44 formed at the surface of the substrate prior to soft film deposition. Such materials may be a layer of metal such as Cr or Ta, which have high resistivity due to partial oxidation when deposited on the substrate. The substrate 40 has a layer of alumina (Al2O3) or silica (SiO2) on which the surface layer 42 is formed. The magnetoresistive layer 48 is typically formed for a NiFe alloy whilst the soft magnetic layer 44 comprises an alloy of NiFeRh, NiFeNb or NiFeCr.