公开(公告)号：JP2010134240A

公开(公告)日：2010-06-17

申请号：JP2008310871

申请日：2008-12-05

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MARUYAMA KEN ,  KAI TOSHIYUKI

IPC: G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming resist patterns for highly precisely and stably forming fine patterns having excellent nano-edge roughness. SOLUTION: The method of forming the resist patterns includes selectively exposing resist films formed on a substrate and having a film thickness of ≤50 nm and developing the resist film by using a developing agent for forming the resist patterns being tetra-methyl ammonium hydroxide aqueous solution having concentration of ≤1.2 mass%. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成抗蚀剂图案的方法，用于高精度和稳定地形成具有优异纳米边缘粗糙度的精细图案。 解决方案：形成抗蚀剂图案的方法包括选择性地曝光形成在基片上的抗蚀剂膜，其膜厚度≤50nm，并通过使用形成抗蚀剂图案的显影剂显影抗蚀剂膜为四甲基铵 浓度≤1.2质量％的氢氧化物水溶液。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010134126A

公开(公告)日：2010-06-17

申请号：JP2008309054

申请日：2008-12-03

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MARUYAMA KEN ,  KAI TOSHIYUKI

IPC: G03F7/004 ,  C08F12/22 ,  C08F20/12 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition or the like for highly precisely and stably forming fine patterns and forming a chemical amplification positive type resist film by responding to active light or radiation and having excellent nano-edge roughness, sensitivity and resolution.
SOLUTION: The composition contains a resin, an acid generating agent expressed by formula (b1), and a low molecular compound. The low molecular compound contains a compound expressed by formula (c1), a compound having two nitrogen atoms, and one of compounds or the like having three or more nitrogen atoms.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供用于高精度和稳定地形成精细图案的辐射敏感性树脂组合物等，并通过响应活性光或辐射形成化学放大正型抗蚀剂膜并具有优异的纳米边缘粗糙度 ，灵敏度和分辨率。 组合物含有树脂，由式（b1）表示的酸产生剂和低分子化合物。 低分子化合物含有由式（c1）表示的化合物，具有两个氮原子的化合物和具有三个或更多个氮原子的化合物之一。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008241931A

公开(公告)日：2008-10-09

申请号：JP2007080050

申请日：2007-03-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIMIZU DAISUKE ,  SAITO AKIO ,  MATSUMURA SHINJI ,  KAI TOSHIYUKI

IPC: G03F7/38 ,  C08F220/58 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern excellent in sensitivity, resolution and nanoscale edge roughness can be formed and a high-accuracy fine pattern can stably be formed. SOLUTION: The pattern forming method includes: a process of forming a resist film on a substrate using a positive radiation-sensitive resin composition; a process of exposing the resist film by irradiation with radiation via a mask having a predetermined pattern; a process of forming an upper layer film on the resist film; and a process of forming a resist pattern by development, wherein the resin composition comprises a radiation-sensitive acid generator and a resin containing a repeating unit having an acid-dissociable group. The repeating unit having an acid-dissociable group is contained in the resin in an amount of 30-80 mol%. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供能够形成灵敏度，分辨率和纳米级边缘粗糙度优异的图案的图案形成方法，并且可以稳定地形成高精度精细图案。 解决方案：图案形成方法包括：使用正性辐射敏感性树脂组合物在基板上形成抗蚀剂膜的工艺; 通过具有预定图案的掩模用辐射照射来曝光抗蚀剂膜的工艺; 在抗蚀膜上形成上层膜的工序; 以及通过显影形成抗蚀剂图案的方法，其中所述树脂组合物包含辐射敏感性酸产生剂和含有具有酸解离基团的重复单元的树脂。 具有酸解离基团的重复单元的含量为30-80摩尔％。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007328060A

公开(公告)日：2007-12-20

申请号：JP2006157873

申请日：2006-06-06

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIMIZU DAISUKE ,  KAI TOSHIYUKI ,  MATSUMURA SHINJI

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/38 ,  C08F220/58 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method suitable for fine pattern formation with an electron beam, X-ray or extreme ultraviolet radiation, and a radiation-sensitive resin composition and a radiation-sensitive acid generation group-containing resin for use in the same.
SOLUTION: In this pattern forming method, a resist pattern is formed by generating an acid from a radiation-sensitive acid generation group-containing resin contained as a resin component in a radiation-sensitive resin composition by irradiation with an actinic ray or radiation to increase the solubility of the radiation-sensitive acid generation group-containing resin in a developer. This radiation-sensitive resin composition contains as a resin component only an acid generation group-containing resin which comprises a repeating unit containing an acid generation group capable of generating an acid upon irradiation with an actinic ray or radiation and a non-acid-dissociative repeating unit.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供适合于用电子束，X射线或极紫外线辐射的精细图案形成的图案形成方法，以及辐射敏感性树脂组合物和含辐射敏感性产酸基团的树脂 用于相同的。 解决方案：在该图案形成方法中，通过在放射线敏感性树脂组合物中作为树脂成分含有的含有辐射敏感性的含酸产生基团的树脂通过用光化射线照射产生酸而形成抗蚀剂图案，或 辐射以增加含辐射敏感性的含酸产生基团的树脂在显影剂中的溶解度。 该放射线敏感性树脂组合物仅含有含酸产生基团的树脂，该树脂包含含有在通过光化射线或辐射照射时能够产生酸的酸产生基团的重复单元和非酸解离的重复 单元。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007114431A

公开(公告)日：2007-05-10

申请号：JP2005304946

申请日：2005-10-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIMIZU DAISUKE ,  MATSUMURA SHINJI ,  NISHIYAMA SATORU ,  KAI TOSHIYUKI

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a chemically amplified positive radiation-sensitive resin composition that is superior in roughness, etching resistance, sensitivity and resolution, capable of stably forming a fine pattern with high accuracy, and suitable for use as a resin composition for EB or EUV, effectively sensitive to an electron beam or extreme-ultraviolet radiation. SOLUTION: The positive radiation-sensitive resin composition contains a radiation-sensitive acid generator (A), capable of generating an acid upon irradiation with radiation, an acid-dissociable group-containing resin (B) which is alkali-insoluble or slightly alkali-soluble and becomes readily alkali-soluble by the action of an acid; an acid propagator (C) capable of generating an acid in a chain reaction by the action of an acid; and a photosensitive basic compound (D), which loses its basicity upon irradiation with radiation, wherein the acid propagator (C) is a compound, having a sulfonate group represented by Formula (1) on a carbon-ring skeleton. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有优异的粗糙度，耐腐蚀性，灵敏度和分辨率的化学放大正性辐射敏感性树脂组合物，能够以高精度稳定地形成精细图案，并且适合用作树脂 用于EB或EUV的组合物，对电子束或极紫外辐射有效敏感。 解决方案：正性辐射敏感性树脂组合物含有辐射敏感性酸产生剂（A），其能够在辐射照射时产生酸，碱解不溶性基团的树脂（B）是碱不溶性的或 稍微碱溶性，并通过酸的作用变得容易碱溶; 能够通过酸的作用产生链反应中的酸的酸传播体（C） 和感光性碱性化合物（D），其在辐射照射时失去其碱性，其中酸传播剂（C）是在碳环骨架上具有由式（1）表示的磺酸酯基的化合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007092018A

公开(公告)日：2007-04-12

申请号：JP2006036868

申请日：2006-02-14

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAGAI TOMOKI ,  MIZUNO HIROMI ,  YOSHIDA KOICHIRO ,  YAMAGUCHI KEIICHI ,  SHIMIZU DAISUKE ,  MATSUMURA SHINJI ,  NISHIYAMA SATORU ,  KAI TOSHIYUKI

IPC: C08F8/12 ,  C08F212/14 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin excellent in the resolution performance, sensitivity and latitude of exposure. SOLUTION: The copolymer concerned is obtained by copolymerizing a monomer expressed by formula (1) (wherein, R 1 is a hydrogen atom or a methyl group; and R 2 and R 3 are each a saturated hydrocarbyl group) and monomers containing a monomer having a specific tertiary ether group and then by hydrolyzing with an acid perfectly an acid-dissociative group of the monomer expressed by formula (1) and besides by hydrolyzing a part of the acid-dissociative group of the monomer. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供在分辨率性能，灵敏度和曝光度方面优异的辐射敏感性树脂。 解决方案：所述共聚物通过共聚由式（1）表示的单体（其中R 1 为氢原子或甲基）和R SP SP 2 >和R 3 各自为饱和烃基）和含有具有特定叔醚基的单体的单体，然后通过酸完全酸解由式（1）表示的单体的酸解离基团 ），并且除了水解单体的酸解离基团的一部分外。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007058159A

公开(公告)日：2007-03-08

申请号：JP2006007034

申请日：2006-01-16

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIYAMA SATORU ,  KAI TOSHIYUKI ,  SHIMIZU DAISUKE ,  MATSUMURA SHINJI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition suitable for use in fine pattern formation with an electron beam or extreme-ultraviolet radiation. SOLUTION: The positive radiation sensitive resin composition contains a radiation-sensitive acid generator (A) which is at least one compound selected from among a sulfonyloxyimide compound, a sulfonium salt compound, an iodonium salt compound and a diazonium salt compound, an acid dissociable group-containing resin (B) which is alkali-insoluble or slightly alkali-soluble but becomes readily alkali-soluble by the action of acid, and an acid diffusion control agent (C), and the composition is patterned with EB, X-rays or EUV wherein the acid generator (A) is contained in an amount of 20-80 pts.wt. and the acid diffusion control agent (C) in an amount of 0.1-1 pt.wt., based on 100 pts.wt. of the acid dissociable group-containing resin (B). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于电子束或极紫外辐射的精细图案形成中的抗蚀剂组合物。 阳离子敏感性树脂组合物含有辐射敏感性酸产生剂（A），其为选自磺酰氧基酰亚胺化合物，锍盐化合物，碘鎓盐化合物和重氮盐化合物中的至少一种化合物， 酸溶解性基团的树脂（B）是碱不溶性或微碱溶性但通过酸作用而容易碱溶解的酸和酸扩散控制剂（C），组合物用EB，X - 其中酸产生剂（A）的含量为20-80重量份。 和酸扩散控制剂（C），其量为0.1-1重量份，基于100重量份 的含酸解离基团的树脂（B）。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2013145384A

公开(公告)日：2013-07-25

申请号：JP2013029533

申请日：2013-02-18

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUMURA SHINJI ,  SHIMIZU DAISUKE ,  KAI TOSHIYUKI

IPC: G03F7/004 ,  C07C309/06 ,  C07C309/12 ,  C07C381/12 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/004 ,  C07C309/12 ,  C07C381/12 ,  G03F7/0045

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition satisfying high sensitivity, high resolution, good pattern form, and good line edge roughness at the same time.SOLUTION: A radiation-sensitive composition comprises: (A) a low-molecular-weight compound having, per molecule, one or more acid-dissociable groups which decompose by action of acid to enhance solubility in alkaline developing solution and one or more radiation-sensitive acid-generating groups which generate the acid by irradiation with actinic rays or a radiation and having a number-average molecular weight (Mn) of 500 to 4,000 expressed in terms of polystyrene measured by gel permeation chromatography (GPC); and (B) a solvent. The low-molecular-weight compound (A) is a compound shown by the following formula (1).

Abstract translation: 要解决的问题：提供同时满足高灵敏度，高分辨率，良好图案形式和良好线边缘粗糙度的辐射敏感组合物。解决方案：辐射敏感组合物包含：（A）低分子量 每分子具有一个或多个酸分解基团，其通过酸的作用分解，以增强在碱性显影溶液中的溶解度，以及一种或多种通过用光化射线或辐射照射产生酸的辐射敏感性产酸基团 并且通过凝胶渗透色谱法（GPC）测定的以聚苯乙烯换算的数均分子量（Mn）为500〜4000; 和（B）溶剂。 低分子量化合物（A）是下述式（1）表示的化合物。

公开(公告)号：JP2011053359A

公开(公告)日：2011-03-17

申请号：JP2009200868

申请日：2009-08-31

Applicant: Jsr Corp ,  Jsr株式会社 ,  Kanagawa Univ ,  学校法人神奈川大学

Inventor： NISHIKUBO TATATOMI ,  KUDO HIROTO ,  NIINA NOBUMITSU ,  SHIMOKAWA TSUTOMU ,  KAI TOSHIYUKI ,  MARUYAMA KEN

IPC: G03F7/038 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition capable of forming a chemically amplified negative resist film, which composition is effectively sensitive to EB (electron beam) or EUV (extreme ultraviolet radiation) and excellent in roughness, etching resistance, and sensitivity and which composition stably forms a highly precise fine pattern.
SOLUTION: The negative radiation-sensitive resin composition comprises an arene-based compound (A) represented by general formula (1) or (2) (wherein R is mutually independently a hydrogen atom or a 1-8C alkyl group, X is mutually independently a 1-8C alkylene group, and at least any of Rs is a 1-8C alkyl group), a crosslinking agent (B), an acid generator (C), an acid-diffusion controller (D), and a solvent (E).
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供能够形成化学放大的负性抗蚀剂膜的辐射敏感性树脂组合物，该组合物对EB（电子束）或EUV（极紫外线辐射）有效敏感且具有优异的粗糙度，蚀刻性 电阻和灵敏度，哪种组成稳定地形成高精度的精细图案。 解决方案：负辐射敏感性树脂组合物包含由通式（1）或（2）表示的芳族基化合物（A）（其中R相互独立地为氢原子或1-8C烷基，X 相互独立地为1-8C亚烷基，并且至少任一个R 8为1-8 C烷基），交联剂（B），酸产生剂（C），酸扩散控制剂（D）和 溶剂（E）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010134239A

公开(公告)日：2010-06-17

申请号：JP2008310863

申请日：2008-12-05

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MARUYAMA KEN ,  KAI TOSHIYUKI

IPC: G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming resist patterns capable of highly precisely and stably forming fine patterns having excellent nano-edge roughness. SOLUTION: The method for forming the resist patterns includes selectively exposing resist films formed on a substrate and having a film thickness of ≤50 nm and developing the resist film by using a developing agent for forming the resist patterns being aqueous solution containing an organic solvent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够高精度地且稳定地形成具有优异的纳米边缘粗糙度的精细图案的抗蚀剂图案的形成方法。 解决方案：用于形成抗蚀剂图案的方法包括选择性地曝光形成在基板上的抗蚀剂膜，并且具有≤50nm的膜厚度并通过使用形成抗蚀剂图案的显影剂来显影抗蚀剂膜，该显影剂是含有 有机溶剂。 版权所有（C）2010，JPO＆INPIT