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公开(公告)号：JP2013044002A
公开(公告)日：2013-03-04
申请号：JP2011181196
申请日：2011-08-23
Inventor： YAMAMOTO MASAHIRO , NISHIMURA HIDEKI , AOKI HIDEYUKI , SAKAI TATSUYA
Abstract: PROBLEM TO BE SOLVED: To form a homogeneous and dense aluminum film by a simple method.SOLUTION: An aluminum film forming method includes: a coating film forming process of coating a surface of a metal oxide layer with composition for forming an aluminum film containing the complex of a first amine compound and aluminum hydride and organic solvent to form a coating film; and an aluminum film forming process of forming the aluminum film on the coating film by executing at least one kind of treatment to be selected from heat treatment and light irradiation treatment.
Abstract translation: 要解决的问题：通过简单的方法形成均匀且致密的铝膜。 解决方案：铝膜形成方法包括：涂覆金属氧化物表面的涂膜形成方法，其具有用于形成含有第一胺化合物和氢化铝与有机溶剂的络合物的铝膜的组合物，以形成 涂膜; 以及通过执行从热处理和光照射处理中选择的至少一种处理而在涂膜上形成铝膜的铝膜形成工艺。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2005206925A
公开(公告)日：2005-08-04
申请号：JP2004017238
申请日：2004-01-26
Inventor： YONEKURA ISAMU , YOKOYAMA YASUAKI , SAKAI TATSUYA , MATSUKI YASUO
IPC: C23C18/08 , C23C18/10 , C23C18/14 , C23C18/52 , H01L21/288
Abstract: PROBLEM TO BE SOLVED: To provide an electrically conductive stacked film easily and inexpensively usable for the wiring and electrode of many electronic devices, to provide a method of forming the same, and to provide wiring and an electrode obtained by using the same.
SOLUTION: The electrically conductive stacked film is obtained by stacking a metal aluminum film and an electrically conductive film comprising metal selected from the group consisting of molybdenum, tungsten and tantalum, and carbon. The electrode or wiring of an electronic device is obtained by using the same. In the method of forming an electrically conductive film, an organic metal complex of metal selected from the group consisting of molybdenum, tungsten and tantalum is applied to the surface of a substrate, next, heat treatment is performed to form an electrically conductive film, then, a complex of an amine compound and alane (aluminum hydride) is applied to the surface of the electrically conductive film, and next, heat and/optical treatment is performed to form a metal aluminum film.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：为了提供容易且廉价地用于许多电子器件的布线和电极的导电叠层膜，以提供其形成方法，并且提供布线和使用该导线的电极 。 解决方案：导电性叠层膜通过层叠金属铝膜和包含选自钼，钨和钽的金属和碳的金属的导电膜而获得。 通过使用电子装置的电极或布线来获得。 在形成导电膜的方法中，将选自钼，钨和钽的金属的有机金属络合物施加到基板的表面，接下来进行热处理以形成导电膜，然后 ，将胺化合物和丙烯（氢化铝）的配合物涂布在导电膜的表面，接着进行热处理和/光学处理，形成金属铝膜。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2005060814A
公开(公告)日：2005-03-10
申请号：JP2003318133
申请日：2003-09-10
Inventor： SAKAI TATSUYA , OKADA SACHIKO , MATSUKI YASUO
IPC: C07C11/12 , C07C13/263 , C07C22/02 , C07C53/126 , C07F7/08 , C07F15/00 , C07F17/02 , C07F19/00 , C23C16/18 , H01L21/285
Abstract: PROBLEM TO BE SOLVED: To provide a ruthenium compound from which film-like metallic ruthenium of high quality can be obtained, and to provide a method of forming a metallic ruthenium film by a chemical vapor deposition method using the same.
SOLUTION: The ruthenium compound as a chemical vapor deposition material is, e.g. expressed by formula (1).
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供可以从其获得高质量的薄膜状金属钌的钌化合物，并提供通过使用该钌化合物的化学气相沉积法形成金属钌膜的方法。 作为化学气相沉积材料的钌化合物是例如。 由公式（1）表示。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2012092025A
公开(公告)日：2012-05-17
申请号：JP2010238625
申请日：2010-10-25
Applicant: Jsr Corp , Jsr株式会社 , Tokyo Univ Of Agriculture & Technology , Tri Chemical Laboratory Inc , 国立大学法人東京農工大学 , 株式会社トリケミカル研究所
Inventor： SAITO RYUICHI , TEI YASUMASA , NISHIMURA HIDEKI , SAKAI TATSUYA , KOMIYA SANSHIRO , NODA NAOTO , NISHIGUCHI MAKI
IPC: C07C11/12 , C01G55/00 , C07C5/00 , C07C13/263 , C07F15/00
CPC classification number: C07F17/02 , C07F15/0046 , C07F15/0053
Abstract: PROBLEM TO BE SOLVED: To provide a method for synthesizing a trifluorophosphine-ruthenium compound under low-temperature and low-pressure conditions.SOLUTION: The method for producing a ruthenium compound includes a step of reacting a compound represented by general formula (1): RuLwith trifluorophosphine, or reacting the compound represented by general formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by general formula (2): Ru(PF)(L)(L)(in general formulas (1) and (2), each of Land Lrepresents an unsaturated 4-10C hydrocarbon compound having at least two double bonds; Lrepresents a hydrogen atom or a halogen atom; l is an integer of 1-5; m is an integer of 0-4; and n is an integer of 0-2, provided that l+m+2n=5 or 6).
Abstract translation: 待解决的问题：提供在低温低压条件下合成三氟化膦 - 钌化合物的方法。 解决方案：钌化合物的制造方法包括使通式（1）表示的化合物：RuL
0 或使通式（1）表示的化合物与三氟化膦反应，得到通式（2）表示的化合物：Ru（PF ） 1 （L 1 ） m SP POS =“POST”> 2 ） n （在通式（1）和（2）中，L 0 和L 2 表示具有至少两个双键的不饱和4-10C烃化合物; L 1 氢原子或卤原子; l为1-5的整数; m为0-4的整数; n为0-2的整数，条件是l + m + 2n = 5或6）。 版权所有（C）2012，JPO＆INPIT -
25.发明专利Composition for forming ruthenium film, and method for forming ruthenium film 审中-公开用于形成薄膜的组合物和形成薄膜的方法
公开(公告)号：JP2010077468A
公开(公告)日：2010-04-08
申请号：JP2008244686
申请日：2008-09-24
Inventor： SAKAI TATSUYA , MATSUKI YASUO
IPC: C23C18/02 , C23C18/14 , H01L21/28 , H01L21/288
Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a ruthenium film by a simple and inexpensive coating method, and a method for forming the ruthenium film by the coating using the composition.
SOLUTION: The composition for forming the ruthenium film includes ruthenium compounds such as tetra (μ-trifluoro-acetate) di (acetone) di-ruthenium, and a tetra (μ-pentafluoro-propionate) di (acetone) di-ruthenium, and solvent. In the method for forming the ruthenium film, the ruthenium film is formed on a base body by coating the composition for forming the ruthenium film on the base body, and heating the composition and/or applying the light thereon.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 待解决的问题：通过简单且便宜的涂布方法提供用于形成钌膜的组合物，以及通过使用该组合物的涂层形成钌膜的方法。 解决方案：用于形成钌膜的组合物包括钌化合物如四（μ-三氟乙酸酯）二（丙酮）二钌和四（五氟丙酸酯）二（丙酮）二钌 ，和溶剂。 在形成钌膜的方法中，通过在基体上涂布用于形成钌膜的组合物，并在其上加热组合物和/或施加光，在基体上形成钌膜。 版权所有（C）2010，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2006237392A
公开(公告)日：2006-09-07
申请号：JP2005051655
申请日：2005-02-25
Inventor： SAKAI TATSUYA , MATSUKI YASUO
IPC: H01L21/28 , H01L21/288
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a conductive foundation film for burying a trench by a plating method to an insulating base having a trench of a small opening width and a large aspect ratio, or a formation method for forming an aluminum film which is useful as a method for forming a conductive film of a uniform thickness in an inner surface of a through-hole of a multilayer structure.
SOLUTION: The method for forming an aluminum film comprises a process (1) for preparing a base with a trench or a hole, a process (2) for applying a composition comprising compound and solvent comprising at least one kind of atom selected from a group consisting of titanium, palladium and aluminum on the base under a first pressure, a process (3) for putting the base after applied under a second pressure which is smaller than the first pressure in the application process, a process (4) for performing heat treatment for the base, a process (5) for applying a composition comprising a complex and solvent of amine compound and aluminum hydride, and a process (6) for performing heat treatment for the base.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供一种用于通过电镀方法将沟槽埋入的导电基底膜形成到具有小开口宽度和大纵横比的沟槽的绝缘基底的方法或用于形成的形成方法 铝膜，其可用作在多层结构的通孔的内表面中形成均匀厚度的导电膜的方法。 解决方案：用于形成铝膜的方法包括用于制备具有沟槽或孔的基底的方法（1），用于施加包含化合物和包含至少一种选择的原子的溶剂的组合物的方法（2） 在第一压力下在基材上由钛，钯和铝组成的组中，在施加过程中在小于第一压力的第二压力下施加基体的工序（3），工序（4） 用于对基底进行热处理的方法（5），用于施加包含胺化合物和氢化铝的络合物和溶剂的组合物的方法（5）和用于对所述碱进行热处理的方法（6）。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2006057112A
公开(公告)日：2006-03-02
申请号：JP2004236910
申请日：2004-08-17
Inventor： SAKAI TATSUYA , HASHIMOTO SACHIKO , MATSUKI YASUO
IPC: C23C16/52 , C23C16/16 , H01L21/28 , H01L21/285
Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method capable of performing a stable film deposition and obtaining a high-definition film even when using a raw material having low decomposition temperature. SOLUTION: The chemical vapor deposition method is characterized in that the pressure in a reaction chamber is varied by being reached to a first set pressure and a second set pressure, which is higher than the first set pressure, alternately. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：即使在使用分解温度低的原料的情况下，也能够提供能够进行稳定的膜沉积和获得高清晰度膜的化学气相沉积方法。 解决方案：化学气相沉积方法的特征在于，反应室中的压力交替地达到第一设定压力和第二设定压力而变化，第二设定压力高于第一设定压力。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005079468A
公开(公告)日：2005-03-24
申请号：JP2003310453
申请日：2003-09-02
Inventor： SAKAI TATSUYA , OKADA SACHIKO , MATSUKI YASUO
IPC: C23C16/30 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide a method for preventing peeling in an interface between an insulating film layer of especially a low dielectric constant and a diffusion preventing film layer when wiring is formed on the insulating film layer of a low dielectric constant by a damascene method. SOLUTION: A ruthenium-silicon mixed film is formed by a method wherein a specified ruthenium compound (A) and an annular silane compound (B) are used as a raw material. The specified ruthenium compound (A) is expressed by, for example, formula (1): (Cp') 2 Ru, wherein Cp' is a ligand expressed by formula (2) and the two Cp's can be the same or different from each other. Wherein, R 1 is a 1-6C alkyl group or fluoro-alkyl group, trimethylsilyl group or fluorine atom, a is an integer of 0 to 5, and when a plurality of R 1 s exist, they can be the same or different from each other. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种防止在介电常数绝缘膜层与防扩散膜层之间的界面中的剥离的方法，当在低介电常数的绝缘膜层上形成布线时，通过 一种镶嵌方法。 解决方案：通过使用规定的钌化合物（A）和环状硅烷化合物（B）作为原料的方法形成钌硅混合膜。 指定的钌化合物（A）由例如式（1）表示：（Cp'）
2 Ru，其中Cp'是由式（2）表示的配体，并且两个Cp's 彼此相同或不同。 其中R 1为1-6C烷基或氟代烷基，三甲基甲硅烷基或氟原子，a为0〜5的整数，当多个R 1 < / SP>存在，它们可以相同或不同。 版权所有（C）2005，JPO＆NCIPI -
29.发明专利
公开(公告)号：JP2004359532A
公开(公告)日：2004-12-24
申请号：JP2003182221
申请日：2003-06-26
Inventor： YONEKURA ISAMU , OKADA SACHIKO , KATO HITOSHI , SAKAI TATSUYA
IPC: C01G35/00 , C07F9/00 , C23C18/12 , C23C18/14 , H01B3/46 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/78
CPC classification number: H01L21/316 , C23C18/1216 , C23C18/14 , H01L21/31637
Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a tantalum oxide film capable of easily and efficiently forming a high quality tantalum oxide film having a large specific dielectric constant and a less leak current and being preservable for a long time under an atmospheric condition at a high humidity, a tantalum oxide film formed thereby, and its manufacturing method.
SOLUTION: The composition for forming the tantalum oxide film contains a reaction product prepared from tantalum alkoxide and at least one or more kinds among carboxylic acids and carboxylic acid anhydrides and a solvent. The tantalum oxide film is formed by forming a coating film of the composition and then treating it with heat and/or light.
COPYRIGHT: (C)2005,JPO&NCIPI-
公开(公告)号：JP2011026556A
公开(公告)日：2011-02-10
申请号：JP2010131957
申请日：2010-06-09
Inventor： ARAI TAKAYUKI , TAKAHASHI MASAYUKI , MATSUKI YASUO , SAKAI TATSUYA , KONNO KEIJI
Abstract: PROBLEM TO BE SOLVED: To provide a composition capable of forming a cured product excellent in at least water-absorbing properties, oxygen-absorbing properties, and heat resistance; a cured product formed from the composition; and an electronic device including the cured product.
SOLUTION: The composition contains: (A) an organometallic compound represented by general formula (1): (R
1 )nM; and (B) a polymer including a repeating unit represented by general formula (2) and having a weight-average molecular weight (Mw) of 10,000-1,000,000.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供能够形成至少吸水性，氧吸收性和耐热性优异的固化产物的组合物; 由该组合物形成的固化物; 以及包括固化产物的电子设备。 组合物包含：（A）由通式（1）表示的有机金属化合物：（R 1 SP 1）nM; 和（B）包含由通式（2）表示的重均单元，重均分子量（Mw）为10,000-1,000,000的聚合物。 版权所有（C）2011，JPO＆INPIT
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