Abstract:
The present invention relates to a hairpin-type probe for detecting a target substance and a method for detecting a target substance using the probe. The hairpin-type probe comprises a loop comprising a target substance recognition site, and a stem comprising an aptamer having an electrochemical signaling material bound thereto. The hairpin structure is broken when it is hybridized to the target substance, and thus the signaling material is separated from the aptamer and can freely move to the electrode. Based on the change in the electrochemical signal generated from the signaling material, the amount of the target substance can be accurately detected in real-time.
Abstract:
The light emitting device can include a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, at least one or more electrode layers on the second conductivity type semiconductor layer, and an insulating layer on the electrode layer. At least one of the second conductivity type semiconductor layer and the electrode layer can be positioned in the central region of the light emitting device. Therefore, even if a plurality of light emitting devices are disposed on a substrate of a display device having different assembly directions, all light emitting devices assembled on the substrate can emit light without defects.
Abstract:
Discussed is a display device including a plurality of semiconductor light-emitting elements; and a substrate in which the plurality of semiconductor light-emitting elements are accommodated and a wiring is disposed, wherein the plurality of semiconductor light-emitting elements each includes a sapphire layer on one side, and a plurality of electrodes on another side, the plurality of electrodes having an asymmetric shape with respect to at least one direction of the sapphire layer. Electrodes of the plurality of semiconductor light-emitting elements and the electrodes of assembly substrate are manufactured in an asymmetrical shape so that the plurality of semiconductor light-emitting elements having a size of several hundred µm can be arranged in one direction on the assembly substrate through self-assembly.
Abstract:
Discussed is a manufacturing method of a display device. The manufacturing method includes forming a semiconductor light emitting element comprising an assembly blocking layer formed on one surface of the semiconductor light emitting element; preparing an assembly substrate comprising an assembly recess and configured such that the semiconductor light emitting element is assembled in the assembly recess; putting the semiconductor light emitting element into a chamber filled with a fluid; locating the assembly substrate on an upper surface of the chamber, and assembling the semiconductor light emitting element in the assembly recess of the assembly substrate using a magnetic field and an electric field; and transferring the semiconductor light emitting element assembled in the assembly recess of the assembly substrate to a wiring substrate.
Abstract:
A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.
Abstract:
The embodiment relates to an intelligent integrated assembly and transfer apparatus. The intelligent integrated assembly and transfer apparatus according to the embodiment can include a fluid chamber 300, a roller unit 200 and assembly inspection unit 500. The fluid chamber 300 can accommodate semiconductor light emitting devices 150. Semiconductor light emitting devices 150 can be assembled on an assembly substrate 210. The assembly substrate 210 can be mounted on the roller unit 200. The roller unit 200 can rotate the assembly substrate 210. The assembly inspection unit 500 can inspect the semiconductor light emitting devices 150 assembled on the assembly substrate 210. The roller unit 200 can include a roller rotated part 220 where the assembly substrate 210 is mounted and rotated, a roller driving part 230 for rotating the roller rotated part 220, and a magnet head unit 400 for applying magnetic force to the semiconductor light emitting devices 150 to be assembled on the assembly substrate 210.
Abstract:
Discussed is an apparatus for self-assembling semiconductor light-emitting devices, the apparatus including a fluid chamber to accommodate the semiconductor light-emitting devices, each semiconductor light-emitting device having a magnetic body; a magnet to apply a magnetic force to the semiconductor light-emitting devices while an assembly substrate is disposed at an assembly position of the self-assembly apparatus; a power supply to induce formation of an electric field on the assembly substrate to allow the semiconductor light-emitting devices to be seated at a preset positions on the assembly substrate in a process of moving the semiconductor light-emitting devices due to a change in a position of the magnet; and a fluid injector to shoot a fluid to some of the semiconductor light-emitting devices to allow the some of the semiconductor light-emitting devices seated on the assembly substrate to be separated from the assembly substrate.
Abstract:
Discussed in a method of fabricating a display device, the method including transferring a substrate to an assembly position, and placing a plurality of semiconductor light emitting devices each having a first conductive semiconductor layer and a second conductive semiconductor layer into a fluid chamber, guiding a movement of the plurality of semiconductor light emitting devices in the fluid chamber to assemble the plurality of semiconductor light emitting devices at preset positions of the substrate, etching at least one of the first conductive semiconductor layer and the second conductive semiconductor layer while the plurality of semiconductor light emitting devices are placed at the preset positions of the substrate and connecting a first wiring electrode and a second wiring electrode respectively to each of the plurality of semiconductor light emitting devices.
Abstract:
The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.
Abstract:
A display device including a substrate including a wiring electrode; a conductive adhesive layer including an anisotropic conductive medium, and disposed to cover the wiring electrode; and a plurality of semiconductor light emitting devices adhered to the conductive adhesive layer and electrically connected to the wiring electrode through the anisotropic conductive medium. Further, the conductive adhesive layer includes a first layer disposed on the substrate; a second layer deposited on the first layer and including the anisotropic conductive medium; and a third layer deposited on the second layer, to which the semiconductor light emitting devices are adhered. Further, at least one of the second layer and the third layer includes a white pigment configured to reflect light emitted by the semiconductor light emitting device.