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    Radiation-emitting device
    23.
    发明授权
    Radiation-emitting device 有权

    公开(公告)号：US11415814B2

    公开(公告)日：2022-08-16

    申请号：US16366558

    申请日：2019-03-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Hubert Halbritter ,  Mikko Perälä

    IPC: G02B30/27 ,  H04N13/305

    Abstract: A radiation-emitting device including a radiation source, an emission surface through which radiation from the radiation source passes during operation, wherein the emission surface includes a plurality of pixels, each pixel includes a plurality of subpixels, in plan view of the emission surface, each pixel forms a partial area of the emission surface and each subpixel forms a portion of such partial area, for each pixel, at least first subpixels are operable individually and independently of one another, and all subpixels of a pixel together make up at most 50% of the area of the pixel so that in simultaneous operation of all subpixels radiation is emitted via at most 50% of the area of the pixel.

    OPTOELECTRONIC MODULE, METHOD FOR OPERATING AN OPTOELECTRONIC MODULE AND HEAD-MOUNTED DISPLAY
    26.
    发明申请
    OPTOELECTRONIC MODULE, METHOD FOR OPERATING AN OPTOELECTRONIC MODULE AND HEAD-MOUNTED DISPLAY 有权

    公开(公告)号：US20220091444A1

    公开(公告)日：2022-03-24

    申请号：US17028539

    申请日：2020-09-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Rudolf Behringer ,  Hubert Halbritter ,  Ann Russell

    IPC: G02F1/01 ,  G02F1/19 ,  H01S5/028 ,  H01S5/40

    Abstract: An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

    Optoelectronic device comprising a scattering element
    28.
    发明授权
    Optoelectronic device comprising a scattering element 有权

    公开(公告)号：US11143381B2

    公开(公告)日：2021-10-12

    申请号：US16328699

    申请日：2017-08-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Hubert Halbritter

    IPC: F21V5/04 ,  F21V5/00 ,  G02B5/02 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y115/30

    Abstract: In an embodiment, an arrangement includes an optoelectronic device including a plurality of components configured to generate electromagnetic radiation, wherein the components are arranged in a grid having identical spacings and a scattering element for expanding a radiation region of the electromagnetic radiation of the device, the scattering element comprising a first layer having first linear structures, the first structures being arranged parallel to one another and a second layer having second linear structures, the second linear structures being aligned parallel to one another, wherein the first linear structures and the second linear structures are arranged at a predefined angle of between 1° and 179°, wherein the first linear structures and/or the second linear structures constitute wave peaks and wave valleys, wherein adjacent wave valleys and adjacent wave peaks constitute a periodic spacing, and wherein the periodic spacing deviates at most by 20% from a multiple of the periodic spacing of the components.

    Semiconductor radiation source
    29.
    发明授权
    Semiconductor radiation source 有权

    公开(公告)号：US11070025B2

    公开(公告)日：2021-07-20

    申请号：US16491184

    申请日：2018-03-20

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Wojcik ,  Hubert Halbritter ,  Josip Maric

    IPC: H01S3/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/068 ,  H01S5/02345 ,  H01S5/0236 ,  H01S5/062 ,  H01S5/0237

    Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

    Semiconductor Laser and Method for Producing Such a Semiconductor Laser
    30.
    发明申请
    Semiconductor Laser and Method for Producing Such a Semiconductor Laser 审中-公开

    公开(公告)号：US20190245326A1

    公开(公告)日：2019-08-08

    申请号：US16343989

    申请日：2018-01-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Hubert Halbritter ,  Andreas Plößl ,  Roland Heinrich Enzmann ,  Martin Rudolf Behringer

    IPC: H01S5/183 ,  H01S5/022 ,  H01S5/042 ,  H01S5/42

    Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

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