公开(公告)号：EP1588414A2

公开(公告)日：2005-10-26

申请号：EP04705373.1

申请日：2004-01-27

Applicant: Osram Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  HÄRLE, Volker ,  HAHN, Berthold

IPC: H01L21/58

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

Abstract: The invention relates to a method for producing a semiconductor component, according to which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile, whose flank slope is gentle enough to prevent cracks in the semiconductor layer (2) caused by thermally induced lateral stresses, during the separation of the semiconductor layer (2) from the substrate (1).

公开(公告)号：EP2561387A1

公开(公告)日：2013-02-27

申请号：EP11710188.1

申请日：2011-03-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRICK, Peter ,  KAISER, Stephan ,  KUHN, Gerhard ,  MARKYTAN, Ales ,  MUSCHAWECK, Julius ,  NEUGIRG, Christian

IPC: G02B6/00

CPC classification number: G02B6/0016 ,  G02B6/0035 ,  G02B6/0041 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0076

Abstract: The invention relates to a surface light guide (1) which has a radiation exit area (10) extending along a main extension plane of the surface light guide (1) and is provided for laterally coupling radiation, wherein - the surface light guide (1) comprises scattering locations (4) for scattering the coupled radiation; - the surface light guide (1) comprises a first boundary surface (15) and a second boundary surface (16) which delimit the light conductance of the coupled-in radiation in the vertical direction; - and a first layer (11) and a second layer (12) are formed on each other in the vertical direction between the first boundary surface (31) and the second boundary surface (32). Further disclosed are a planar emitter (100) comprising at least one surface light guide (1).

公开(公告)号：EP2289113A1

公开(公告)日：2011-03-02

申请号：EP09757123.6

申请日：2009-06-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  PLÖSSL, Andreas

IPC: H01L33/00

Abstract: An embodiment of the invention relates to a method for producing an optoelectronic component, comprising the following steps: A) providing an epitaxial growth substrate (1), B) growing at least one semiconductor layer (2) thereon by epitaxy in order to produce an active zone during operation, C) applying a metal mirror layer (3) onto the semiconductor layer (2), D) applying at least one contact layer (8) for the electronic contacting of the component, E) separating the epitaxial growth substrate (1) from the semiconductor layer (2), wherein a surface of the semiconductor layer (2) is exposed, F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface that was exposed in step E).

Abstract translation: 本发明的一个实施例涉及一种用于制造光电子器件的方法，包括以下步骤：A）提供外延生长衬底（1），B）通过外延在其上生长至少一个半导体层（2），以便产生 C）在半导体层（2）上施加金属镜层（3），D）施加至少一个接触层（8）以用于电子接触部件，E）将外延生长衬底 1）从半导体层（2）露出，其中暴露出半导体层（2）的表面，F）通过蚀刻方法从步骤E中暴露的表面侧构造半导体层（2） ）。

公开(公告)号：EP2502460A1

公开(公告)日：2012-09-26

申请号：EP10773021.0

申请日：2010-10-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  KUNZ, Thorsten ,  MUSCHAWECK, Julius

IPC: H05B33/08

CPC classification number: H05B33/0869 ,  H05B33/0872

Abstract: The invention relates to a light emitting device (100) comprising at least one light diode of a first type (1); one converter element (3) downstream of the light diode of the first type (1); at least one light diode of a second type (2); and an actuating circuit (5) for operating the light diode of the second type (2).

公开(公告)号：EP1741144A1

公开(公告)日：2007-01-10

申请号：EP04730193.2

申请日：2004-04-29

Applicant: Osram Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  KAISER, Stephan ,  HÄRLE, Volker

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

公开(公告)号：EP2289113B1

公开(公告)日：2020-04-08

申请号：EP09757123.6

申请日：2009-06-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  PLÖSSL, Andreas

IPC: H01L33/20 ,  H01L33/40 ,  H01L33/00

公开(公告)号：EP1588414B1

公开(公告)日：2014-12-03

申请号：EP04705373.1

申请日：2004-01-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  HÄRLE, Volker ,  HAHN, Berthold

IPC: H01L21/58 ,  H01L21/268 ,  H01L21/78

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

公开(公告)号：EP2561270A1

公开(公告)日：2013-02-27

申请号：EP11713245.6

申请日：2011-04-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRICK, Peter ,  FRANK, Joachim ,  HILLER, Uli ,  KAISER, Stephan ,  KUHN, Gerhard ,  MARKYTAN, Ales ,  MUSCHAWECK, Julius ,  NEUGIRG, Christian

IPC: F21V11/14 ,  F21K99/00

CPC classification number: G02B6/0001 ,  F21K9/00 ,  F21V11/14 ,  G02B6/0036 ,  G02B6/0058 ,  G02B6/0073 ,  G09F13/04

Abstract: The invention relates to a surface light source with a lighting surface (6), comprising at least one semiconductor body (2) that emits electromagnetic radiation from its front side (3) during operation, and further comprising decoupling structures (7) which are suitable for producing a local variation of the light density on the lighting surface (6), so that the light density (6) is increased in at least one illumination area (8) with respect to a background area (9).

Abstract translation: 本发明涉及具有照明表面的表面光源，其包括在操作期间从其前侧发射电磁辐射的至少一个半导体本体。 去耦结构适于产生照明表面上的光密度的局部变化，使得相对于背景区域的至少一个照明区域的光密度增加。

公开(公告)号：EP1774599A2

公开(公告)日：2007-04-18

申请号：EP05770659.0

申请日：2005-07-20

Applicant: Osram Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  HÄRLE, Volker ,  KAISER, Stephan ,  PLÖSSL, Andreas

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

Abstract: The invention relates to the production of semiconductor chips (1) using thin-film technology, in which a sequence of active layers is applied to a growth substrate (3) and a structured reflective electrically conductive contact material layer (4) is subsequently configured on said sequence of layers. The sequence of active layers is then structured to form active stacks (2) of layers, in such a way that a reflective electrically conductive contact material layer (4) is present on each active stack (2) of layers. A flexible electrically conductive film (6) is then applied to the contact material layers (4) to act as an auxiliary carrier layer and the growth substrate is removed.

公开(公告)号：EP2561270B1

公开(公告)日：2018-02-14

申请号：EP11713245.6

申请日：2011-04-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRICK, Peter ,  FRANK, Joachim ,  HILLER, Uli ,  KAISER, Stephan ,  KUHN, Gerhard ,  MARKYTAN, Ales ,  MUSCHAWECK, Julius ,  NEUGIRG, Christian

IPC: F21V11/14 ,  F21K99/00

CPC classification number: G02B6/0001 ,  F21K9/00 ,  F21V11/14 ,  G02B6/0021 ,  G02B6/0036 ,  G02B6/0058 ,  G02B6/0073 ,  G09F13/04