公开(公告)号：US20140329350A1

公开(公告)日：2014-11-06

申请号：US14335691

申请日：2014-07-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639

Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Abstract translation: 提供了一种制造发光二极管的方法。 在一个实施例中，一系列层沿生长方向沉积在载体的硅表面上，并且发光二极管结构沉积在一系列层上。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。

公开(公告)号：US20140302665A1

公开(公告)日：2014-10-09

申请号：US14346787

申请日：2012-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.

Abstract translation: 制造氮化物半导体元件的方法包括：提供具有硅表面的生长衬底，将包含含铝氮化物半导体的缓冲层生长到所述硅表面上，生长产生压应力的应力层结构，以及生长 功能半导体层序列到应力层结构上，其中应力层结构包括第一GaN半导体层和第二GaN半导体层，掩模层嵌入第一GaN半导体层中，Al（Ga）N-中间层， 在第一GaN半导体层和第二GaN半导体层之间产生压应力，并且应力层结构不包含另外的Al（Ga）N中间层。