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    HYBRID INTEGRATION OF EDGE-COUPLED CHIPS
    23.
    发明申请
    HYBRID INTEGRATION OF EDGE-COUPLED CHIPS 有权
    边缘耦合杂交的混合整合

    公开(公告)号：US20160170158A1

    公开(公告)日：2016-06-16

    申请号：US14060136

    申请日：2013-10-22

    Applicant: Oracle International Corporation

    Inventor： Xuezhe Zheng ,  Ivan Shubin ,  Ying L. Luo ,  Guoliang Li ,  Ashok V. Krishnamoorthy

    IPC: G02B6/42 ,  H01S5/02 ,  G02B6/14 ,  H01S5/026 ,  H01S5/30

    CPC classification number: G02B6/4224 ,  G02B6/00 ,  G02B6/14

    Abstract: A technique for fabricating a hybrid optical source is described. During this fabrication technique, a III-V compound-semiconductor active gain medium is integrated with a silicon-on-insulator (SOI) chip (or wafer) using edge coupling to form a co-planar hybrid optical source. Using a backside etch-assisted cleaving technique, and a temporary transparent substrate with alignment markers, a III-V compound-semiconductor chip with proper edge polish and coating can be integrated with a processed SOI chip (or wafer) with accurate alignment. This fabrication technique may significantly reduce the alignment complexity when fabricating the hybrid optical source, and may enable wafer-scale integration.

    Abstract translation: 描述了一种用于制造混合光源的技术。 在该制造技术中，III-V族化合物 - 半导体有源增益介质使用边缘耦合与绝缘体上硅（SOI）芯片集成，以形成共面混合光源。 使用背面蚀刻辅助切割技术和具有对准标记的临时透明基板，具有适当边缘抛光和涂层的III-V化合物半导体芯片可以与精确对准的经处理的SOI芯片（或晶片）集成。 当制造混合光源时，这种制造技术可以显着降低对准复杂性，并且可以实现晶片级整合。

    Optical components having a common etch depth
    24.
    发明授权
    Optical components having a common etch depth 有权
    具有普通蚀刻深度的光学部件

    公开(公告)号：US09354394B2

    公开(公告)日：2016-05-31

    申请号：US13890140

    申请日：2013-05-08

    Applicant: Oracle International Corporation

    Inventor： Guoliang Li ,  Xuezhe Zheng ,  Ashok V. Krishnamoorthy

    IPC: G02B6/136 ,  G02B6/122 ,  G02B6/12

    CPC classification number: G02B6/136 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/125

    Abstract: An optical device is described. This optical device includes multiple components, such as a ring resonator, an optical waveguide and a grating coupler, having a common etch depth (which is associated with a single etch step or operation during fabrication). Moreover, these components may be implemented in a semiconductor layer in a silicon-on-insulator technology. By using a common etch depth, the optical device may provide: compact active devices, multimode ultralow-loss optical waveguides, high-speed ring resonator modulators with ultralow power consumption, and compact low-loss interlayer couplers for multilayer-routed optical links. Furthermore, the single etch step may help reduce or eliminate optical transition loss, and thus may facilitate high yield and low manufacturing costs.

    Abstract translation: 描述光学装置。 该光学器件包括具有公共蚀刻深度（其与单个蚀刻步骤或制造期间的操作相关联）的多个部件，例如环形谐振器，光学波导和光栅耦合器。 此外，这些组件可以在绝缘体上硅技术中的半导体层中实现。 通过使用普通的蚀刻深度，光学器件可以提供：紧凑的有源器件，多模超低损耗光波导，具有超低功耗的高速环形谐振器调制器和用于多层路由光链路的紧凑型低损耗层间耦合器。 此外，单个蚀刻步骤可以有助于减少或消除光学转变损耗，因此可以促进高产率和低制造成本。

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