公开(公告)号：US09142698B1

公开(公告)日：2015-09-22

申请号：US14252607

申请日：2014-04-14

Applicant: Oracle International Corporation

Inventor： John E. Cunningham ,  Jin Yao ,  Ivan Shubin ,  Guoliang Li ,  Xuezhe Zheng ,  Shiyun Lin ,  Hiren D. Thacker ,  Stevan S. Djordjevic ,  Ashok V. Krishnamoorthy

IPC: H01L31/18 ,  H01L31/0232

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02B2006/12107 ,  G02B2006/12142 ,  G02F1/0018 ,  G02F1/015 ,  G02F2001/0157 ,  H01L21/26513 ,  H01L31/02327 ,  Y02P70/521

Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.

Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压，可以在光波导的平面中产生电场，但是垂直于光信号的传播方向。 该电场移动锗的带隙，从而调制光信号。