Abstract:
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.
Abstract:
One object is to provide a game system that can technically restrain real money trade. In accordance with one aspect, a game system according to an embodiment of the present invention includes: a bid data generating unit configured to generate bid data including game medium information related to a bid game medium and not including player specifying information that specifies a bidder player; and a second display control unit configured to allow a bid screen generated based on bid data to be displayed in the game being played by an exhibitor player.
Abstract:
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.
Abstract:
An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.
Abstract:
When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 μm) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness of an Al layer needs to make as thick as possible in order to fully exhibit stress relaxation performance of the Al layer.Provided is a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces.
Abstract translation:当与常规的Zn / Al / Zn包层材料连接时,连接部件的厚度需要小于现有的高铅焊料(约100μm)的两倍,以便使连接部件中的耐热性至少等于 现有焊料的水平。 此外,为了充分发挥Al层的应力松弛性,需要使Al层的厚度尽可能地厚。 提供一种半导体器件,包括半导体元件,框架和将半导体元件和框架彼此连接的连接部分,其中连接部分和半导体元件之间的界面以及连接部分和半导体元件之间的界面 框分别具有比各界面的整个面积大于0%且小于5%的Al氧化物膜的面积。
Abstract:
A plurality of NAND cells are arranged in a cell array. In each of the NAND cells, a pair of selection gate transistors is connected in series to a plurality of memory cell transistors. An inter-gate connection trench is formed in an insulating film between layers of stacked gates of the selection gate transistors. The stacked gates are electrically connected to each other. At an end part of the cell array in the row direction, an STI area is formed, and dummy NAND cells are formed at an end part in the row direction. A dummy selection gate transistor is connected in series to a plurality of dummy memory cell transistors. No inter-gate connection trench is present in an insulating film between layers of stacked gates of the dummy selection gate transistor, and the stacked gates of the dummy selection gate transistor are not electrically connected to each other.
Abstract:
An image reproduction apparatus sequences and reproduces multiple moving pictures while eliminating linking and editing operations. A list display unit lists on a screen thumbnails corresponding to each of multiple moving pictures recorded on recording media. A selection unit selects and orders, according to selection operations, multiple thumbnails displayed by the list display unit. Based on the multiple thumbnails selected and ordered by the selection unit, a reproduction unit reproduces the moving pictures corresponding to each of the thumbnails by reproducing them in that order. A display displays moving pictures sequenced in order by the reproduction unit on a screen.
Abstract:
In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, when an Al series alloy layer is left after the connection, since the soft Al functions as a stress buffer material, the high connection reliability can be achieved.
Abstract:
In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.
Abstract:
This invention miniaturizes a package of a semiconductor device and simplifies a manufacturing procedure to reduce a manufacturing cost. A semiconductor wafer formed of a plurality of semiconductor chips formed with MEMS devices and wiring thereof on front surface thereof and a cap arrayed wafer disposed with a plurality of sealing caps are attached to seal the MEMS devices in cavities between them. Then, a plurality of via-holes is provided penetrating through the semiconductor wafer to form embedded electrodes therein, and bump electrodes are formed thereon. After this procedure, this structure is cut along scribe lines to be divided into each of packages.