公开(公告)号：WO2006000998A2

公开(公告)日：2006-01-05

申请号：PCT/IB2005052091

申请日：2005-06-24

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  SCHWEIZER BERND ,  VOGTMEIER GEREON ,  ENGEL KLAUS JUERGEN

Inventor： SCHWEIZER BERND ,  VOGTMEIER GEREON ,  ENGEL KLAUS JUERGEN

IPC: G04G21/04

CPC classification number: G01T1/1648

Abstract: The invention refers to X-ray devices, an X-ray detector and a method of correcting intensity signals. An X-ray detector then comprises for determining the intensity of X-rays, which comprise a proportion of primary radiation having an irradiation direction and a proportion of scattered radiation, at least a first sensor element and second sensor elements, which are each provided for converting the X-rays into first and second intensity signals, and a filter element, which is provided for decreasing the proportion of scattered radiation in the intensity of the X-rays, wherein the second sensor elements are arranged in irradiation direction behind the filter element and wherein the first sensor element fastened to the filter element is provided for determining the intensity of the X-rays before leaving the filter element. The proportion of the scattered radiation calculated from the measuring data of the first and second sensor elements is provided for correcting the second intensity signals for the following image generation.

Abstract translation: 本发明涉及X射线装置，X射线检测器和校正强度信号的方法。 然后，X射线检测器包括用于确定X射线的强度，X射线包括具有照射方向和散射辐射比例的一次辐射的比例，至少第一传感器元件和第二传感器元件，其被设置用于 将X射线转换成第一强度信号和第二强度信号;以及滤波器元件，其被设置用于减小X射线强度中的散射辐射的比例，其中第二传感器元件沿照射方向布置在滤光元件的后面 并且其中提供紧固到过滤元件的第一传感器元件用于确定离开过滤元件之前的X射线的强度。 提供从第一和第二传感器元件的测量数据计算的散射辐射的比例，用于校正用于后续图像生成的第二强度信号。

公开(公告)号：WO2012080927A2

公开(公告)日：2012-06-21

申请号：PCT/IB2011055596

申请日：2011-12-12

Applicant: KONINKL PHILIPS ELECTRONICS NV ,  PHILIPS INTELLECTUAL PROPERTY ,  VOGTMEIER GEREON

Inventor： VOGTMEIER GEREON

IPC: G01T1/164

CPC classification number: G01T1/2006 ,  G01T1/2008

Abstract: The invention relates to a radiation detector (100) comprising a scintillator group with for example two scintillator elements (120a, 120b) for converting incident primary photons (X, X') into secondary photons (?, ?') according to a characteristic emission spectrum. Moreover, the detector comprises at least two photodetectors (120a, 120b) for converting said secondary photons into electrical signals, wherein said photodetectors have different absorption spectra and can be read out separately. According to a preferred embodiment of the invention, the photodetectors are organic photodetectors (120a, 120b). The scintillator elements (120a, 120b) and the photodetectors are preferably arranged in a stack one behind the other. Due to the at least two photodetectors (120a, 120b), additional information about incident primary radiation (X, X') can be collected.

Abstract translation: 本发明涉及一种辐射检测器（100），其包括闪烁体组，其具有例如两个闪烁体元件（120a，120b），用于根据特征发射将入射的初级光子（X，X'）转换成次级光子（α，β'） 光谱。 此外，检测器包括用于将所述次级光子转换成电信号的至少两个光电检测器（120a，120b），其中所述光电检测器具有不同的吸收光谱并且可以分别读出。 根据本发明的优选实施例，光电检测器是有机光电检测器（120a，120b）。 闪烁体元件（120a，120b）和光电检测器优选地以堆叠方式彼此排列。 由于至少两个光电检测器（120a，120b），可以收集关于入射初级辐射（X，X'）的附加信息。

公开(公告)号：WO2010004453A3

公开(公告)日：2010-06-10

申请号：PCT/IB2009052442

申请日：2009-06-09

Applicant: KONINKL PHILIPS ELECTRONICS NV ,  PHILIPS INTELLECTUAL PROPERTY ,  VOGTMEIER GEREON ,  HERRMANN CHRISTOPH ,  ENGEL KLAUS J

Inventor： VOGTMEIER GEREON ,  HERRMANN CHRISTOPH ,  ENGEL KLAUS J

IPC: G01T1/29

CPC classification number: G01T1/2928

Abstract: The invention relates to a radiation detector (10), comprising an array of pixels (1), wherein each pixel (1) comprises a conversion layer of a semiconductor material (4) for converting incident radiation into electrical signals and wherein each pixel (1) is surrounded by a trench (3) that is at least partly filled with a barrier material that absorbs at least a part of photons generated by the incident radiation. The invention also relates to a method of manufacturing such a radiation detector (10).

Abstract translation: 本发明涉及包括像素阵列（1）的辐射探测器（10），其中每个像素（1）包括用于将入射辐射转换为电信号的半导体材料（4）的转换层，并且其中每个像素 ）由沟槽（3）围绕，沟槽（3）至少部分地填充有阻挡材料，该阻挡材料吸收由入射辐射产生的至少一部分光子。 本发明还涉及制造这种辐射探测器（10）的方法。

公开(公告)号：WO2007034352A3

公开(公告)日：2008-11-20

申请号：PCT/IB2006053208

申请日：2006-09-11

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  DORSCHEID RALF ,  VOGTMEIER GEREON ,  STEADMAN ROGER ,  GROOM ROY K ,  ELGALY AVNER

Inventor： DORSCHEID RALF ,  VOGTMEIER GEREON ,  STEADMAN ROGER ,  GROOM ROY K ,  ELGALY AVNER

IPC: G21K1/02 ,  A61B6/06

CPC classification number: G21K1/025 ,  A61B6/032 ,  A61B6/037 ,  A61B6/06 ,  A61B6/4258 ,  A61B6/4291

Abstract: A Grid (1) for selective absorption of electromagnetic radiation (2, 3), as used e.g. in CT or NM imaging, comprises a block of a rigid foam material (4), where the foam material is essentially transparent to the electromagnetic radiation (2, 3), a first set of radiation absorbing lamellae (5), and a second set of radiation absorbing lamellae (6), the first and the second set of lamellae are arranged in the block of foam material so that a radiation transmission direction (T) is defined, the first set of lamellae and the second set of lamellae being arranged on top of each other with respect to the transmission direction (T). Such a grid arrangement is rigid due to the use of a carrier material, can be manufactured precisely and, furthermore, two-dimensional grids can be manufactured without the need to physically intersect the lamellae.

Abstract translation: 用于选择性吸收电磁辐射（2,3）的格栅（1） 在CT或NM成像中包括刚性泡沫材料块（4），其中泡沫材料对电磁辐射（2,3）基本上是透明的，第一组辐射吸收薄片（5）和第二组 的辐射吸收薄片（6），第一和第二组薄片布置在泡沫材料块中，从而定义辐射透射方向（T），第一组薄片和第二组薄片布置在 相对于传输方向（T）彼此相邻。 由于使用载体材料，这种格栅布置是刚性的，因此可以精确地制造，此外，可以制造二维格栅，而不需要物理地与薄片相交。

公开(公告)号：WO2007110799A3

公开(公告)日：2007-12-13

申请号：PCT/IB2007050914

申请日：2007-03-16

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  VOGTMEIER GEREON ,  STEADMAN ROGER ,  DORSCHEID RALF ,  JONKERS JEROEN

Inventor： VOGTMEIER GEREON ,  STEADMAN ROGER ,  DORSCHEID RALF ,  JONKERS JEROEN

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/131 ,  H01L2924/014

Abstract: It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection (610) extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.

Abstract translation: 描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接（610）。 第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。 第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。 前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。 在处理TWI期间，通孔可以首先用非金属材料填充，例如， 多晶硅。 在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

公开(公告)号：WO2007023422A3

公开(公告)日：2007-05-31

申请号：PCT/IB2006052825

申请日：2006-08-16

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  DORSCHEID RALF ,  VOGTMEIER GEREON ,  STEADMAN ROGER

Inventor： DORSCHEID RALF ,  VOGTMEIER GEREON ,  STEADMAN ROGER

IPC: G01R1/073

CPC classification number: G01R1/0735 ,  G01R31/2635 ,  G01R31/2889

Abstract: An inspection method for through- wafer interconnects of a through- wafer interconnects substrate (105) the substrate having a front-side and a back-side on which back-side at least one contact (218) is formed, comprises the steps of placing a multi-contact foil (108) on the back-side and contacting the multi-contact foil (108) with a contacting substrate (109). An inspection device (107) for a through-wafer interconnects substrate (105) comprising a multi-contact foil (108) contactable to a through-wafer interconnects substrate (105) and contacted to a contacting substrate (105).

Abstract translation: 一种用于贯穿晶片的晶片间互连的检查方法，其中，基片（105）具有形成有背侧至少一个触点（218）的前侧和后侧的基板，包括以下步骤： 在多个接触箔（108）上的多个接触箔（108）与接触衬底（109）接触。 一种用于贯穿晶片的检查装置（107），其包括可接触透晶片互连基板（105）并与接触基板（105）接触的多接触箔片（108）。