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公开(公告)号:EP4182708A2
公开(公告)日:2023-05-24
申请号:EP21748737.0
申请日:2021-07-06
Applicant: QUALCOMM INCORPORATED
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22.
公开(公告)号:EP3105851A1
公开(公告)日:2016-12-21
申请号:EP15706999.8
申请日:2015-02-12
Applicant: Qualcomm Incorporated
Inventor: HASSAN, Muhammad , TANG, Yiwu , VAN ZALINGE, Klaas , WANG, Chuan , PAN, Dongling
CPC classification number: H04W52/0261 , H03F1/0205 , H03F3/189 , H03F3/191 , H03F3/193 , H03F2200/294 , H03F2200/451 , H03G3/00 , H04B1/40 , H04W88/06 , Y02D70/1242 , Y02D70/1262 , Y02D70/142 , Y02D70/144 , Y02D70/164
Abstract: A device includes a multi-mode low noise amplifier (LNA) having a first amplifier stage, and a second amplifier stage coupled to the first amplifier stage, the second amplifier stage having a plurality of amplification paths configured to amplify a plurality of carrier frequencies, the first amplifier stage configured to bypass the second amplifier stage when the first amplifier stage is configured to amplify a single carrier frequency.
Abstract translation: 一种器件包括具有第一放大级的多模低噪声放大器(LNA)和耦合到第一放大级的第二放大级,第二放大级具有多个放大路径,用于放大多个载波频率, 当第一放大器级被配置为放大单个载波频率时,第一放大器级被配置为绕过第二放大器级。
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