公开(公告)号：US20220171098A1

公开(公告)日：2022-06-02

申请号：US17459537

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin CHOI ,  Hyeonjin SHIN ,  Changseok LEE ,  Sangwon KIM

IPC: G02B1/113 ,  H01L27/146 ,  H01L21/027 ,  H01L31/0216 ,  H01L31/052 ,  H01L51/52 ,  G03F7/09

Abstract: Provided are an amorphous boron nitride film and an anti-reflection coating structure including the amorphous boron nitride film. The amorphous boron nitride film has an amorphous structure including an sp3 hybrid bond and an sp2 hybrid bond, in which a ratio of the sp3 hybrid bond in the amorphous boron nitride film is less than about 20%.

公开(公告)号：US20210410096A1

公开(公告)日：2021-12-30

申请号：US17362647

申请日：2021-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungki YOU ,  Changseok LEE ,  Sohmann KIM ,  Sukkyung YOON ,  Dongsuk JUNG ,  Seunghoon NAM ,  Jonghyun PARK ,  Kiyong LEE

IPC: H04W60/04 ,  H04W60/06 ,  H04W48/16 ,  H04W28/02

Abstract: Provided is a method and apparatus for providing call function continuity in an electronic device. The electronic device may include: a first communication circuit configured to support new radio (NR) communication and/or long-term evolution (LTE) communication, a second communication circuit configured to support wireless LAN communication, and at least one processor operatively connected to the first communication circuit and the second communication circuit, wherein the processor is configured to control the electronic device to: register with a network of the NR communication via the first communication circuit; connect a call to an external device using the wireless LAN communication based on being in a state of being registered with the network of the NR communication; based on the call connection to the external device using the wireless LAN communication, restrict use of the NR communication; and based on the restriction of the use of the NR communication, register with a network of the LTE communication via the first communication circuit.

公开(公告)号：US20210163296A1

公开(公告)日：2021-06-03

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Yeonchoo CHO

IPC: C01B32/186

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

公开(公告)号：US20210125930A1

公开(公告)日：2021-04-29

申请号：US17082530

申请日：2020-10-28

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE ,  Kyung-Eun BYUN ,  Hyeonsuk SHIN ,  Seokmo HONG

IPC: H01L23/532 ,  H01L27/108 ,  H01L23/522

Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.

公开(公告)号：US20210123161A1

公开(公告)日：2021-04-29

申请号：US17082502

申请日：2020-10-28

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok LEE ,  Hyeonsuk SHIN ,  Hyeonjin SHIN ,  Seokmo HONG ,  Minhyun LEE ,  Seunggeol NAM ,  Kyungyeol MA

IPC: C30B29/38 ,  H01L21/02

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

公开(公告)号：US20200294928A1

公开(公告)日：2020-09-17

申请号：US16884590

申请日：2020-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Keunwook SHIN ,  Yonghoon KIM ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Changseok LEE ,  Changhyun KIM ,  Yeonchoo CHO

IPC: H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US20240170562A1

公开(公告)日：2024-05-23

申请号：US18366366

申请日：2023-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Kyung-Eun BYUN ,  Changseok LEE ,  Minseok YOO

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a first two-dimensional (2D) material layer, a second 2D material layer, a first electrode, a second electrode, a third electrode, a first gate electrode. and a second gate electrode. A Fermi-level may be pinned on an interfacial surface between the first 2D material layer and the first electrode. The Fermi-level may be depinned on an interfacial surface between the second 2D material layer and the first electrode.

公开(公告)号：US20230272554A1

公开(公告)日：2023-08-31

申请号：US18298692

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok LEE ,  Hyeonsuk SHIN ,  Hyeonjin SHIN ,  Seokmo HONG ,  Minhyun LEE ,  Seunggeol NAM ,  Kyungyeol MA

IPC: C30B29/38 ,  H01L21/02

CPC classification number: C30B29/38 ,  H01L21/02172 ,  H01L21/02252 ,  H01L21/02293

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

公开(公告)号：US20230112883A1

公开(公告)日：2023-04-13

申请号：US17690376

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Keunwook SHIN ,  Junyoung KWON ,  Minseok YOO ,  Changseok LEE

IPC: H01L29/76 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Provided are a two-dimensional material structure, a semiconductor device including the two-dimensional material structure, and a method of manufacturing the semiconductor device. The two-dimensional material structure may include a first insulator including a first dielectric material; a second insulator on the first insulator and including a second dielectric material; a first two-dimensional material film on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films may include a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film may include more layers of the two-dimensional material than the first two-dimensional material film.

公开(公告)号：US20230079680A1

公开(公告)日：2023-03-16

申请号：US17829679

申请日：2022-06-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC: C01B32/186 ,  C01B32/188 ,  H01L29/41 ,  H01L29/40

Abstract: Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).