公开(公告)号：US20170125418A1

公开(公告)日：2017-05-04

申请号：US15407598

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEYOUNG PARK ,  SUNGHO KANG ,  KICHUL KIM ,  Sunyoung LEE ,  HAN KI LEE ,  BONYOUNG KOO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L21/768 ,  H01L29/34 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C.

公开(公告)号：US20160301019A1

公开(公告)日：2016-10-13

申请号：US15093400

申请日：2016-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Yoonhyun KWAK ,  Bumwoo PARK

IPC: H01L51/00 ,  C09K11/02 ,  C07F15/00 ,  C09K11/06

CPC classification number: H01L51/0087 ,  C07F15/0093 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, M, A11 to A13, L11, R11 to R15, X11, Y11 to Y17, b13 to b15, and n11 are the same as described in the specification.

公开(公告)号：US20160204362A1

公开(公告)日：2016-07-14

申请号：US14931270

申请日：2015-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumwoo PARK ,  Yoonhyun KWAK ,  Hyun KOO ,  Jiwhan KIM ,  Sunyoung LEE ,  Jiyoun LEE

IPC: H01L51/00 ,  C09K11/06 ,  C07F15/00

CPC classification number: H01L51/0087 ,  C07F15/0026 ,  C07F15/004 ,  C07F15/0093 ,  C09K11/06 ,  C09K2211/185 ,  H01L51/0085 ,  H01L51/0088 ,  H01L51/5016

Abstract: An organometallic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as described in the specification.

公开(公告)号：US20160190484A1

公开(公告)日：2016-06-30

申请号：US14859895

申请日：2015-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungin LEE ,  Yoonhyun KWAK ,  Sunyoung LEE ,  Ohyun KWON ,  Seungyeon KWAK ,  Jiyoun LEE ,  Seokhwan HONG ,  Aram JEON

IPC: H01L51/00 ,  C09K11/06 ,  C07F15/00

CPC classification number: C09K11/06 ,  C07F15/0033 ,  C07F15/0086 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1096 ,  C09K2211/185 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5016

Abstract: An organometallic compound represented by Formula 1: M(L1)n1(L2)n2  Formula 1 wherein in Formula 1, M, L1, L2, n1, and n2 are the same as described in the specification.

公开(公告)号：US20150333273A1

公开(公告)日：2015-11-19

申请号：US14599724

申请日：2015-01-19

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd

Inventor： Sunyoung LEE ,  Soyeon KIM ,  Yoonhyun KWAK ,  Sangdong KIM ,  Sangyeob LEE

IPC: H01L51/00 ,  C07D519/00 ,  C07D487/06

CPC classification number: C07D487/06 ,  C07D519/00 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5024 ,  H01L51/5072 ,  H01L2251/5384

Abstract: A condensed cyclic compound represented by one of Formulae 1A to 1C, wherein Formulae 1A to 1C are disclosed in the detailed description.

Abstract translation: 由式1A至1C之一表示的缩合的环状化合物，其中式1A至1C在详细描述中公开。

公开(公告)号：US20150201267A1

公开(公告)日：2015-07-16

申请号：US14596454

申请日：2015-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhee CHANG ,  Sukgyong KIM ,  Taeeon KIM ,  Cheolyong PARK ,  Sunghoon JEONG ,  Juntai KIM ,  Sunyoung LEE

IPC: H04R1/10

CPC classification number: H04R1/1041 ,  H04R1/1091 ,  H04R3/12 ,  H04R5/04 ,  H04R29/00 ,  H04R2430/01 ,  H04R2460/03

Abstract: A headset includes a first speaker; a second speaker; a connector connecting the first speaker and the second speaker; and a switch configured to generate different electrical signals according to states in which the first speaker and the second speaker move close to and away from each other, wherein the electrical signals are used to selectively control an output of contents that is being output from the headset.

Abstract translation: 耳机包括第一扬声器; 第二个发言者 连接所述第一扬声器和所述第二扬声器的连接器; 以及开关，被配置为根据第一扬声器和第二扬声器彼此靠近和远离的状态产生不同的电信号，其中电信号用于选择性地控制正在从耳机输出的内容的输出 。

公开(公告)号：US20250071980A1

公开(公告)日：2025-02-27

申请号：US18755088

申请日：2024-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonyoung JEONG ,  Choonghyun LEE ,  Jooncheol KIM ,  Sunyoung LEE ,  Youngseung CHO

IPC: H10B12/00

Abstract: A semiconductor device may include a substrate including, lower bit line structures from a first region to a second region adjacent to the first region and extending in a second direction perpendicular to the first direction, a second gate structure on the second region of the substrate to be spaced apart from the lower bit line structure, a first offset spacer on a first sidewall corresponding to an end of each of the lower bit line structures in the second direction, a second offset spacer and a first spacer sequentially arranged on a sidewall of the second gate structure, an insulation liner layer at least disposed a surface of the first offset spacer, and a capping pattern covering the lower bit line structures and an upper portion of the second gate structure. The first offset spacer and the insulation liner layer include silicon nitride.

公开(公告)号：US20240237507A1

公开(公告)日：2024-07-11

申请号：US18406353

申请日：2024-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeoungin Yi ,  Seungyeon KWAK ,  Juhyun KIM ,  Sangho PARK ,  Sunyoung LEE ,  Jiyoun LEE ,  Yoonhyun KWAK ,  Hyun KOO ,  Sunghun LEE ,  Hyeonho CHOI

IPC: H10K85/30 ,  C07F15/00 ,  C09K11/06 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18

CPC classification number: H10K85/342 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1044 ,  C09K2211/185 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/171 ,  H10K50/18

Abstract: Provided is an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device.


M(L1)n1(L2)n2  



M, L1, L2, n1, and n2 in Formula 1 are the same as described in the present specification.

公开(公告)号：US20230287024A1

公开(公告)日：2023-09-14

申请号：US18198038

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Jungin LEE ,  Aram JEON ,  Kuyuyoung HWANG ,  Seungyeon KWAK ,  Ohyun KWON ,  Yuri CHO ,  Byoungki CHOI ,  Seokhwan HONG

IPC: C07F15/00 ,  C07B59/00 ,  C09K11/06 ,  H05B33/14 ,  H10K50/11 ,  H10K50/18 ,  H10K50/81 ,  H10K50/82 ,  H10K50/17 ,  H10K85/30

CPC classification number: C07F15/0086 ,  C07B59/004 ,  C09K11/06 ,  H05B33/14 ,  H10K50/11 ,  H10K50/18 ,  H10K50/81 ,  H10K50/82 ,  H10K50/171 ,  H10K85/346 ,  C07B2200/05 ,  H10K50/15

Abstract: An organometallic compound represented by Formula 1:






wherein, in Formula 1, groups and variables are the same as described in the specification.

公开(公告)号：US20230232372A1

公开(公告)日：2023-07-20

申请号：US18097667

申请日：2023-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunyoung LEE ,  Jinho Kim ,  Hongsik Yoon

IPC: H04W72/02 ,  H04W72/541 ,  H04L5/00

CPC classification number: H04W72/02 ,  H04W72/541 ,  H04L5/0051

Abstract: A base station device includes a communication circuit configured to receive a first signal from an external base station device and transmit a second signal to a user equipment, by using a plurality of antennas, and a processor configured to obtain resource allocation information of the external base station device based on the first signal, identify whether an interference cell occurs, and generate the second signal when the interference cell occurs, the second information including resource allocation information of the interference cell.