公开(公告)号：US10312661B2

公开(公告)日：2019-06-04

申请号：US15592704

申请日：2017-05-11

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/022 ,  G02B6/42 ,  H01L23/00 ,  G02B6/136 ,  G02B6/122 ,  G02B6/12 ,  H01S5/02

Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

公开(公告)号：US09991149B2

公开(公告)日：2018-06-05

申请号：US14933694

申请日：2015-11-05

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  John Spann ,  Stephen Krasulick

IPC: H01L21/683 ,  H01L21/027 ,  H01L23/00 ,  H01L21/762 ,  G02B6/42 ,  H01L21/20

CPC classification number: H01L21/6835 ,  G02B6/4201 ,  H01L21/0274 ,  H01L21/2007 ,  H01L21/683 ,  H01L21/76254 ,  H01L24/03 ,  H01L24/27 ,  H01L24/75 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0362 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/80201 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2225/06593 ,  H01L2924/01014 ,  H01L2924/1032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15738

Abstract: A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

公开(公告)号：US20180067343A1

公开(公告)日：2018-03-08

申请号：US15656137

申请日：2017-07-21

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Damien Lambert ,  Andrew Bonthron ,  Guoliang Li

IPC: G02F1/017 ,  G02F1/01 ,  H03H7/38

Abstract: A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

公开(公告)号：US09209142B1

公开(公告)日：2015-12-08

申请号：US14562169

申请日：2014-12-05

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  John Spann ,  Stephen Krasulick

IPC: H01L21/67 ,  H01L23/00 ,  H01L21/762 ,  H01L21/683 ,  H01L21/20

CPC classification number: H01L21/6835 ,  G02B6/4201 ,  H01L21/0274 ,  H01L21/2007 ,  H01L21/683 ,  H01L21/76254 ,  H01L24/03 ,  H01L24/27 ,  H01L24/75 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0362 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/80201 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2225/06593 ,  H01L2924/01014 ,  H01L2924/1032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15738

Abstract: A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

Abstract translation: 使用具有顺应性树脂的转印衬底将一个或多个芯片结合到目标晶片。 植入区域形成在转印衬底中。 转印衬底的一部分被蚀刻以形成提升器。 将合适的材料施加到转印基板上。 芯片被固定到柔性材料上，其中芯片被固定到提升管上方的柔性材料。 当芯片固定到顺应性材料时，芯片被结合到目标晶片。 从芯片上去除转印衬底和柔顺材料。 转印衬底对UV光是不透明的。

公开(公告)号：US20230358951A1

公开(公告)日：2023-11-09

申请号：US18179167

申请日：2023-03-06

Applicant: Skorpios Technologies, Inc.

Inventor： Paveen Apiratikul ,  Damien Lambert

IPC: G02B6/12 ,  G02B6/136 ,  G02B6/122

CPC classification number: G02B6/12004 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B6/1225

Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

公开(公告)号：US11307440B2

公开(公告)日：2022-04-19

申请号：US16843761

申请日：2020-04-08

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Damien Lambert ,  Andrew Bonthron ,  Guoliang Li

IPC: G02B6/26 ,  G02F1/01 ,  G02F1/017 ,  H03H7/38 ,  G02F1/015

Abstract: A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

公开(公告)号：US10895686B2

公开(公告)日：2021-01-19

申请号：US15968454

申请日：2018-05-01

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  Guoliang Li ,  John Zyskind ,  Stephen B. Krasulick

IPC: G02B6/13 ,  G02B6/14 ,  G02B6/122 ,  G02B6/136 ,  G02B6/132 ,  G02B6/30 ,  G02B6/12

Abstract: A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

公开(公告)号：US20200124797A1

公开(公告)日：2020-04-23

申请号：US16428193

申请日：2019-05-31

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/14 ,  G02B6/30 ,  G02B6/136 ,  G02B6/132 ,  G02B6/122

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US20180348432A1

公开(公告)日：2018-12-06

申请号：US15968454

申请日：2018-05-01

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  Guoliang Li ,  John Zyskind ,  Stephen B. Krasulick

IPC: G02B6/14 ,  G02B6/30 ,  G02B6/132 ,  G02B6/136 ,  G02B6/122 ,  G02B6/12

Abstract: A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

公开(公告)号：US10132996B2

公开(公告)日：2018-11-20

申请号：US15133920

申请日：2016-04-20

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: G02B6/136 ,  G02B6/12 ,  G02B6/132 ,  G02B6/125

Abstract: A method forms a vertical output coupler for a waveguide, formed of waveguide material and disposed within a layer stack on a top surface of a wafer. The method includes etching through a portion of the wafer to form a via that exposes the waveguide material, and etching the waveguide material to remove at least a first portion of the waveguide. The etching forms a tilted plane in the waveguide material. The method further includes coating the first tilted plane with one or more reflective layers, to form a tilted mirror in contact with the first tilted plane in the waveguide material. The tilted mirror forms the vertical output coupler such that light propagating through the waveguide is deflected by the tilted mirror, and exits the waveguide.