公开(公告)号：JP2013114441A

公开(公告)日：2013-06-10

申请号：JP2011259796

申请日：2011-11-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI

IPC: G06F12/08 ,  G06F12/16

CPC classification number: G06F12/0246 ,  G06F11/1064 ,  G06F11/1441 ,  G06F11/1666 ,  G06F12/0895 ,  G06F2212/222

Abstract: PROBLEM TO BE SOLVED: To enhance credibility of data stored in a power interrupted state when a non-volatile memory is used as a cache memory.SOLUTION: A non-volatile memory is used for storing cache data. In this case, as a preparation for a situation of power supply interruption, standby preparation processing is performed by generating standby state data and storing the standby state data in the non-volatile memory unit. Also, at a restart of power supply, restoration processing is performed on cache data stored in the non-volatile memory unit by using the standby state data.

Abstract translation: 要解决的问题：当非易失性存储器用作高速缓冲存储器时，为了增强存储在电力中断状态下的数据的可信度。 解决方案：非易失性存储器用于存储缓存数据。 在这种情况下，作为电源中断的情况的准备，通过产生待机状态数据并将待机状态数据存储在非易失性存储单元中来进行备用准备处理。 此外，在重新启动电源时，通过使用待机状态数据对存储在非易失性存储器单元中的高速缓存数据进行恢复处理。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012243933A

公开(公告)日：2012-12-10

申请号：JP2011112219

申请日：2011-05-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMORI HIROYUKI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI ,  ASAYAMA TETSUYA

IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

Abstract: PROBLEM TO BE SOLVED: To provide a storage element which has a high coercive force and can improve thermal stability without increasing a write current.SOLUTION: A storage element comprises: a storage layer holding information by a magnetization state of a magnetic substance; a magnetization fixed layer having magnetization which serves as reference for information stored in the storage layer; an intermediate layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer; a magnetic coupling layer provided on the opposite side to the intermediate layer; and a high coercive force layer provided adjacent to the magnetic coupling layer. The storage element stores information by inverting magnetization of the storage layer by utilizing spin torque magnetization reversal occurring in association with a current flowing in a lamination direction of a layer structure having the storage layer, the intermediate layer and the magnetization fixed layer, and the magnetization coupling layer is composed of a laminate structure of two layers.

Abstract translation: 要解决的问题：提供具有高矫顽力的存储元件，并且可以在不增加写入电流的情况下提高热稳定性。 解决方案：存储元件包括：通过磁性物质的磁化状态保持信息的存储层; 具有作为存储在存储层中的信息的参考的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的非磁性物质的中间层; 设置在与中间层相反的一侧的磁耦合层; 以及设置在磁耦合层附近的高矫顽力层。 存储元件通过利用与具有存储层，中间层和磁化固定层的层结构的层叠方向上流动的电流相关联的自旋转矩磁化反转以及磁化强度来反转存储层的磁化来存储信息 耦合层由两层的层压结构组成。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012199755A

公开(公告)日：2012-10-18

申请号：JP2011062227

申请日：2011-03-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAYAMA TETSUYA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI

IPC: H03K3/356 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H03K3/037

Abstract: PROBLEM TO BE SOLVED: To perform high speed activation of a microcomputer peripheral device in a semiconductor integrated circuit device.SOLUTION: A microcomputer peripheral device outputs a setting signal based on an initial setting command, which is received from a microcomputer, to a functional circuit part through registers and conducts the initial setting. The data of the setting signal in the registers is stored in a holding circuit using a nonvolatile memory element such as an MTJ element. When a power source is turned on again, the initial setting is conducted by using the data of the setting signal which is stored in the holding circuit.

Abstract translation: 要解决的问题：在半导体集成电路装置中执行微型计算机外围设备的高速激活。 解决方案：微机外围设备通过寄存器将基于从微计算机接收的初始设置命令的设置信号输出到功能电路部分，并进行初始设置。 寄存器中的设置信号的数据使用诸如MTJ元件的非易失性存储元件存储在保持电路中。 当再次接通电源时，通过使用存储在保持电路中的设置信号的数据来进行初始设置。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012133829A

公开(公告)日：2012-07-12

申请号：JP2010282820

申请日：2010-12-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI ,  ASAYAMA TETSUYA

IPC: G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11C11/1677 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/00

Abstract: PROBLEM TO BE SOLVED: To make information to be stored in a memory element while preventing destruction of the memory element in ST-MRAM, and also to improve write-in speed.SOLUTION: A plurality of pairs of memory blocks 1-1 and 1-2 and write-in control units 51-1 and 51-2 with respect thereto are provided, and such write-in control is independently performed that: information to be written into each memory element of the memory block 1-1 or 1-2 paired with the write-in control unit 51-1 or 51-2 is stored in a shift register 52; one information is output to the memory block 1-1 or 1-2 from the shift register 52; success or failure in the write-in of output information is determined, and when the failed write-in is determined, the same information is again output to the memory block 1-1 or 1-2, and when the succeeded write-in is determined, an address value is increased for selecting the memory element forming the write-in possible state in the memory block 1-1 or 1-2, and also next information is output to the memory block 1-1 or 1-2 from the shift register 52.

Abstract translation: 要解决的问题：使信息存储在存储元件中，同时防止ST-MRAM中的存储元件的破坏，并且还提高写入速度。 解决方案：提供多对存储块1-1和1-2以及相对于其的写入控制单元51-1和51-2，并且这种写入控制被独立地执行：信息 被写入与写入控制单元51-1或51-2配对的存储块1-1或1-2的每个存储元件被存储在移位寄存器52中; 一个信息从移位寄存器52输出到存储块1-1或1-2; 确定输出信息的写入成功或失败，并且当确定失败的写入时，相同的信息再次输出到存储器块1-1或1-2，并且当成功的写入是 确定了增加存储块1-1或1-2中形成写入可能状态的存储元件的地址值，并且下一个信息从存储块1-1或1-2输出到存储器块1-1或1-2中 移位寄存器52.版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012059879A

公开(公告)日：2012-03-22

申请号：JP2010200984

申请日：2010-09-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  YAMANE ICHIYO ,  UCHIDA HIROYUKI

IPC: H01L27/105 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1675

Abstract: PROBLEM TO BE SOLVED: To provide a storage element and a memory unit which improve heat stability and reduce a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15, and a cap layer 18 provided on a face of the storage layer 17 on the side opposite to the insulation layer 16 side. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. At least a face of the cap layer 18 contacting the storage layer 17 is formed of a Ta film.

Abstract translation: 要解决的问题：提供一种提高热稳定性并减少写入电流的存储元件和存储单元。 解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在 存储层17，设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16以及设置在与绝缘层16侧相反的一侧的存储层17的表面上的盖层18 。 信息由存储层17的磁化方向记录，通过在层叠方向注入电子自旋极化而变化。 这里，施加到存储层17的有效抗磁场的大小被调整为小于存储层17的饱和磁化强度的大小。至少形成了与存储层17接触的盖层18的表面 的电影。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012059878A

公开(公告)日：2012-03-22

申请号：JP2010200983

申请日：2010-09-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  YAMANE ICHIYO ,  UCHIDA HIROYUKI

IPC: H01L27/105 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11C11/16 ,  G11C11/161

Abstract: PROBLEM TO BE SOLVED: To provide a spin injection type magnetic memory that improves heat stability and reduces a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. Each of the storage layer 17 and the magnetization fixed layer 15 has a film thickness so as to make interface magnetic anisotropy energy larger than diamagnetic field energy.

Abstract translation: 要解决的问题：提供一种提高热稳定性并降低写入电流的自旋注入型磁性存储器。 解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在 存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠方向上注入电子自旋极化而变化 。 这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。存储层17和磁化固定层15中的每一个具有膜厚度 以使界面磁各向异性能量大于抗磁场能量。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012028798A

公开(公告)日：2012-02-09

申请号：JP2011200892

申请日：2011-09-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： BESSHO KAZUHIRO

IPC: H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11C11/1673

Abstract: PROBLEM TO BE SOLVED: To provide a memory which can essentially reduce errors caused by interference between reading and writing of information by a memory element and comparatively easily achieve high reliability.SOLUTION: The memory comprises a memory element 10 in which a storage layer 5 is disposed under an interlayer 4 and a magnetization fixed layer 3 is disposed on the interlayer 4, and information is stored in the storage layer 5 such that a magnetization direction of the storage layer 5 is changed by a flow of a current in a lamination direction, and current supply means flows a current in a lamination direction in the memory element 10. When information stored in the storage layer 5 is read, a current is flown into the memory element 10 from the storage layer 5 side to the magnetization fixed layer 3 side through the current supply means.

Abstract translation: 要解决的问题：提供一种能够基本上减少由存储元件读取和写入信息之间的干扰引起的误差并且相对容易实现高可靠性的存储器。 解决方案：存储器包括存储元件10，其中存储层5设置在中间层4的下方，并且磁化固定层3设置在中间层4上，并且信息被存储在存储层5中，使得磁化 存储层5的方向通过层叠方向的电流流动而变化，电流供给单元在存储元件10中沿层叠方向流动电流。当存储在存储层5中的信息被读取时，电流为 通过电流供给装置从存储层5侧向磁化固定层3侧流入存储元件10。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012015312A

公开(公告)日：2012-01-19

申请号：JP2010150179

申请日：2010-06-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMANE ICHIYO ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  UCHIDA HIROYUKI

IPC: H01L27/105 ,  H01L21/8246 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To reduce current required to cause magnetization reversal by spin injection without degrading an information retention characteristic.SOLUTION: A magnetic storage element comprises: a reference layer 26 on which a magnetization direction is fixed to a specific direction; a recording layer 28 in which the magnetization direction is changed by spin injection; an intermediate layer 27 that separates the recording layer 28 from the reference layer 26; and a heating unit 33 that heats the recording layer 28. The material of the recording layer 28 is constituted by a magnetic body, in which the magnetization quantity at 150°C is 50% or more than that at a room temperature and the magnetization quantity at the range of 150 to 200°C is 10 to 80% of that at a room temperature.

Abstract translation: 要解决的问题：减少通过自旋注入引起磁化反转所需的电流，而不降低信息保持特性。 解决方案：磁存储元件包括：参考层26，其上的磁化方向固定在特定方向上; 记录层28，其中磁化方向通过旋转喷射而改变; 将记录层28与基准层26分离的中间层27; 以及加热记录层28的加热单元33.记录层28的材料由磁性体构成，其中150℃的磁化量为室温的50％以上，磁化量为 在150〜200℃的范围内，为室温下的10〜80％。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2008283173A

公开(公告)日：2008-11-20

申请号：JP2008099563

申请日：2008-04-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OBA KAZUHIRO ,  KANO HIROSHI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  YAMAMOTO TETSUYA ,  MIZUGUCHI TETSUYA

IPC: H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  H01F10/13 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic memory device which includes a magnetoresistance effect element having excellent magnetic characteristics and has excellent writing characteristics, by suppressing a reduction in the rate of change of magnetic resistance, the reduction being caused by heat treatment. SOLUTION: A pair of ferromagnetic layers (a magnetization fixing layer 5 and a magnetization free layer 7) are opposed to each other via an intermediate layer 6, and a magnetic resistance is changed by passing a current perpendicularly to a film surface. At least one of the pair of ferromagnetic layers 5 and 7 is predominantly composed of Fe, Co and Ni and contains at least one of C, P, Al, Ge, Ti, Nb, Ta, Zr and Mo as added elements for amorphizing. The magnetic memory device includes a magnetoresistance effect element 1 which contains an amorphous ferromagnetic material having a crystallization temperature of 623 K or higher, and a bit line and a word line by which the magnetoresistance effect element 1 is sandwiched in the thickness direction. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：为了提供一种磁存储器件，其包括具有优异的磁特性并且具有优异的写入特性的磁阻效应元件，通过抑制磁阻变化率的降低，由热处理引起的减小 。 解决方案：一对铁磁层（磁化固定层5和磁化自由层7）经由中间层6彼此相对，并且通过使电流垂直于膜表面而改变磁阻。 一对铁磁层5和7中的至少一个主要由Fe，Co和Ni组成，并且包含作为非晶化的添加元素的C，P，Al，Ge，Ti，Nb，Ta，Zr和Mo中的至少一种。 磁存储器件包括具有结晶温度为623K或更高的非晶态铁磁材料的磁阻效应元件1，以及磁阻效应元件1在厚度方向夹持的位线和字线。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006155719A

公开(公告)日：2006-06-15

申请号：JP2004342583

申请日：2004-11-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： BESSHO KAZUHIRO

IPC: G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: G11C11/16 ,  H01L27/228

Abstract: PROBLEM TO BE SOLVED: To provide a memory capable of integrating memory cells with high density while reducing the size of each memory cell including a selection transistor to the irreducibley minimum by suppressing an influence of the asymmetry of a write-in current.
SOLUTION: A magnetizing fixed layer 4 is formed through an intermediate layer 3 on a storage layer 2 for holding information by the magnetizing state of a magnetic body, and each memory cell is constituted in a manner of providing a storage element 10 by which the information is recorded to a storage layer 2 with the changing of magnetizing direction of the storage layer 2 by bringing a current to flow in the laminating direction, and the selection transistor, then such memory is constituted that current polarity requiring more currents for recording the information to the storage element 10 and current polarity capable of flowing furthermore saturated currents to the selection transistor have the same polarities.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够以高密度积分存储单元的存储器，同时通过抑制写入电流的不对称性的影响，将包括选择晶体管的每个存储单元的尺寸减小到不可约最小值。 解决方案：磁化固定层4通过存储层2上的中间层3形成，用于通过磁体的磁化状态保持信息，并且每个存储单元以以下方式构成：存储元件10由 通过使电流沿层叠方向流动而使存储层2的磁化方向变化而将信息记录到存储层2以及选择晶体管，则这样的存储器被构成为需要更多电流记录的电流极性 存储元件10的信息和能够进一步向选择晶体管饱和电流的电流极性具有相同的极性。 版权所有（C）2006，JPO＆NCIPI