公开(公告)号：JP2009141151A

公开(公告)日：2009-06-25

申请号：JP2007316329

申请日：2007-12-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SONE TAKESHI ,  ENDO KEITARO ,  SASAKI SATOSHI ,  KOUCHIYAMA AKIRA

IPC: H01L27/10 ,  G11C13/00

Abstract: PROBLEM TO BE SOLVED: To provide a memory element which has a larger number of times for repeatable operation than conventional ones, and exhibits a stable resistance varying switching characteristic. SOLUTION: The memory element 1A has a memory layer 17 and an upper electrode 18 on a lower electrode 14 and an insulating film 15. The memory layer 17 comprises the laminating-layer structure of a high-resistance layer and an ion-source layer. The high-resistance layer is formed out of the oxide film of Gd (gadolinium), and the ion-source layer contains such metal elements as Cu (copper), Zr (zirconium), Al (aluminum), and so forth together with such chalcogenide elements as S (sulfur), Se (selenium), Te (tellurium), and so forth. The insulation film 15 has a recessed portion 16, and the lower electrode 14 contacts with the memory layer 17 in the recessed portion 16. The depth of the recessed portion 16 is not smaller than 2 nm and not larger than 20 nm preferably, and is not smaller than 5 nm and not larger than 16 nm more preferably. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有比常规操作重复操作次数更多的存储元件，并且具有稳定的电阻变化开关特性。 存储元件1A在下电极14和绝缘膜15上具有存储层17和上电极18.存储层17包括高电阻层和离子交换层的层叠层结构， 源层。 高电阻层由Gd（钆）的氧化膜形成，离子源层与Cu（铜），Zr（锆），Al（铝）等金属元素一起包含 硫属元素作为S（硫），Se（硒），Te（碲）等。 绝缘膜15具有凹部16，下部电极14与凹部16中的记忆层17接触。凹部16的深度优选为2nm以上且20nm以下，并且为 不小于5nm且不大于16nm。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009135206A

公开(公告)日：2009-06-18

申请号：JP2007308916

申请日：2007-11-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA SHUICHIRO ,  ARAYA KATSUHISA ,  KOUCHIYAMA AKIRA ,  MIZUGUCHI TETSUYA ,  SASAKI SATOSHI

IPC: H01L27/10 ,  G11C13/00 ,  H01L45/00 ,  H01L49/00

CPC classification number: G11C13/0004 ,  G11C13/00 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146

Abstract: PROBLEM TO BE SOLVED: To provide a memory cell which applies a voltage required to change it into a high resistance state or a low resistance state, to a variable resistance element by suitably controlling the resistance value. SOLUTION: A memory device 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The memory device 10 has an inverse nonlinear current-voltage characteristic with respect to the nonlinear current-voltage characteristic of the MOS transistor 30, and it is changed into the high resistance state or the low resistance state according to the polarity of the applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic common to the nonlinear current-voltage characteristic of the memory device 10. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：通过适当地控制电阻值，提供一种将可变电阻元件改变为高电阻状态或低电阻状态所需的电压的存储单元。 解决方案：存储器件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储器件10具有相对于MOS晶体管30的非线性电流 - 电压特性的反非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻状态或低电阻状态。 非线性电阻元件20具有与存储器件10的非线性电流 - 电压特性相同的非线性电流 - 电压特性。版权所有（C）2009，JPO＆INPIT