公开(公告)号：US11360667B2

公开(公告)日：2022-06-14

申请号：US17012501

申请日：2020-09-04

Applicant: STMICROELECTRONICS S.r.l. ,  STMicroelectronics International N.V.

Inventor： Nitin Chawla ,  Giuseppe Desoli ,  Anuj Grover ,  Thomas Boesch ,  Surinder Pal Singh ,  Manuj Ayodhyawasi

IPC: G06F3/06 ,  G06N3/08

Abstract: A memory array arranged as a plurality of memory cells. The memory cells are configured to operate at a determined voltage. A memory management circuitry coupled to the plurality of memory cells tags a first set of the plurality of memory cells as low-voltage cells and tags a second set of the plurality of memory cells as high-voltage cells. A power source provides a low voltage to the first set of memory cells and provides a high voltage to the second set of memory cells based on the tags.