公开(公告)号：EP1339103A1

公开(公告)日：2003-08-27

申请号：EP02425088.8

申请日：2002-02-20

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Casagrande, Giulio ,  Bez, Roberto ,  Pellizzer, Fabio

IPC: H01L23/522 ,  H01L23/528 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: An electronic semiconductor device has a sublithographic contact area (45, 58) between a first conductive region (22) and a second conductive region (38). The first conductive region (22) is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first conductive region forms a first thin portion and has a first dimension in a first direction. The second conductive region (38) has a second thin portion (38a) having a second sublithographic dimension in a second direction (X) transverse to the first dimension. The first and the second conductive regions are in direct electrical contact at their thin portions and form the sublithographic contact area (45, 58). The elongated shape is chosen between rectangular and oval elongated in the first direction. Thereby, the dimensions of the contact area remain approximately constant even in presence of a small misalignment between the masks defining the conductive regions.

Abstract translation: 一种电子半导体器件具有第一导电区（22）和一个第二导电区（38）之间的亚光刻的接触面积（45，58）。 第一导电区（22）是杯形，并具有垂直壁延伸，在俯视图中，沿着细长形状的封闭线。 一个第一导电区域的壁的形成第一薄壁部，并且具有在第一方向上的第一尺寸。 第二导电区域（38）具有在第二方向上的第二亚光刻尺寸（X）横向于第一尺寸的第二薄壁部（38A）。 所述第一和第二导电区域在其薄的部分直接电接触，并形成亚光刻接触区域（45，58）。 细长形状在第一方向上的矩形和椭圆形的细长之间选择。 因此，接触区域的尺寸，即使在掩模之间的小的未对准的存在保持大致恒定，限定导电区域。