Abstract:
A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate, a gate line disposed on the substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the semiconductor and including a source electrode, a drain electrode disposed on the semiconductor and opposite to the source electrode, a color filter disposed on the gate insulating layer, the data line and the drain electrode, an overcoat disposed on the color filter and including an inorganic material, a contact hole defined in the color filter and the overcoat, where the contact hole exposes the drain electrode, and a pixel electrode disposed on the overcoat and connected through the contact hole to the drain electrode, in which a plane shape of the contact hole in the overcoat and a plane shape of the contact hole in the color filter are substantially the same as each other.
Abstract:
A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
Abstract:
A display panel includes: a plurality of first electrodes disposed on a via-layer and corresponding to a plurality of pixel areas, respectively; a pixel-defining layer disposed on the via-layer; first opening parts corresponding to central portions of the first electrodes and penetrating through the pixel-defining layer; electrode undercuts corresponding to edges of the first opening parts and provided as gaps between the first electrodes and the pixel-defining layer; a plurality of second opening parts corresponding to peripheries of the first electrodes, respectively, and penetrating through the pixel-defining layer; and via-grooves corresponding to the second opening parts and defined on an upper surface of the via-layer; via-undercuts provided by the pixel-defining layer around the second opening parts and the via-layer around the via-grooves.
Abstract:
A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.
Abstract:
A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
Abstract:
A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.
Abstract:
A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.
Abstract:
A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
Abstract:
An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
Abstract:
A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer.