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    METHOD OF INSPECTING DEFECTS
    21.
    发明申请
    METHOD OF INSPECTING DEFECTS 有权

    公开(公告)号：US20250014169A1

    公开(公告)日：2025-01-09

    申请号：US18644638

    申请日：2024-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bumjoo LEE ,  Jinwoo LEE ,  Suyoung LEE

    IPC: G06T7/00 ,  G06T5/20 ,  G06T5/70 ,  G06T7/11

    Abstract: A defect inspection method includes: recognizing image peaks that are reference positions of image patterns included an inspection image; performing filtering on a reference image including reference patterns, recognizing reference peaks, and then selecting some of the reference peaks as peak samples; calculating candidate correction constants by overlapping the filtered inspection image and the filtered reference image, and then selecting a primary correction constant among the candidate correction constants; applying the first correction constant to the reference image and selecting a secondary correction constant by matching the image peaks to the reference peaks included in a primary corrected reference image, and then applying the secondary correction constant to the primary corrected reference image and forming a secondary corrected reference image aligned with the inspection image; and performing a defect inspection on the inspection image by matching the image patterns to reference patterns included in the secondary corrected reference image.

    VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    22.
    发明公开
    VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240196763A1

    公开(公告)日：2024-06-13

    申请号：US18214755

    申请日：2023-06-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam HYUN ,  Jooheon KANG ,  Jinwoo LEE

    IPC: H10N70/00 ,  H10B63/00

    CPC classification number: H10N70/826 ,  H10B63/84 ,  H10N70/8833

    Abstract: A variable resistance memory device includes a pillar, a resistance change layer provided at a side surface of the pillar, a semiconductor layer provided at a side surface of the resistance change layer, a gate insulating layer provided at a side surface of the semiconductor layer, a plurality of isolating layers and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer, and an internal resistance layer between the resistance change layer and the semiconductor layer, where a resistance of the internal resistance layer is greater than a resistance of the semiconductor layer when the semiconductor layer includes conductor characteristics and the resistance of the internal resistance layer is less than the resistance of the semiconductor layer when the semiconductor layer includes insulator characteristics.

    MEMORY DEVICES
    25.
    发明申请
    MEMORY DEVICES 有权

    公开(公告)号：US20210313397A1

    公开(公告)日：2021-10-07

    申请号：US17019649

    申请日：2020-09-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinwoo LEE ,  Kwangmin PARK ,  Zhe WU

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A memory device including a first conductive line on a substrate and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction that is perpendicular to the first horizontal direction; and a memory cell between the first conductive line and the second conductive line, the memory cell including a variable resistance memory layer, a buffer resistance layer, and a switch material pattern, extending in a vertical direction that is perpendicular to the first horizontal direction and the second horizontal direction, and having a tapered shape with a decreasing horizontal width along the vertical direction, wherein at least a part of the variable resistance memory layer and at least a part of the buffer resistance layer of the memory cell are at a same vertical level.

    METHOD OF RECOGNIZING SITUATION REQUIRING TRANSLATION AND PERFORMING TRANSLATION FUNCTION, AND ELECTRONIC DEVICE IMPLEMENTING THE SAME
    27.
    发明申请
    METHOD OF RECOGNIZING SITUATION REQUIRING TRANSLATION AND PERFORMING TRANSLATION FUNCTION, AND ELECTRONIC DEVICE IMPLEMENTING THE SAME 有权
    识别需要翻译和执行翻译功能的情况的方法，以及实施其的电子设备

    公开(公告)号：US20150142416A1

    公开(公告)日：2015-05-21

    申请号：US14448297

    申请日：2014-07-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinwoo LEE ,  Chanwoo PARK ,  Byungsoo KIM ,  Jiyeon SEO ,  Myunghwan LEE

    IPC: G06F17/28

    CPC classification number: G06F17/289

    Abstract: Disclosed are a method of recognizing a translation situation and performing a translation function, and an electronic device implementing the same. The electronic device recognizes a situation involving translation and automatically performs a translation function, thereby improving user convenience. An electronic device includes an audio module configured to receive and output audio signal, and a processor. A language translation program is executed in response to detecting that an audio signal received through the audio module includes at least a first language and a second language, a portion of the audio signal that is in the second language is translated into the first language, and the translated portion is outputted through the audio module.

    Abstract translation: 公开了一种识别翻译情况和执行翻译功能的方法，以及实现该翻译功能的电子设备。 电子设备识别涉及翻译的情况并自动执行翻译功能，从而提高用户便利性。 电子设备包括被配置为接收和输出音频信号的音频模块以及处理器。 响应于检测到通过音频模块接收的音频信号至少包括第一语言和第二语言，执行语言翻译程序，将处于第二语言的音频信号的一部分转换为第一语言，以及 翻译部分通过音频模块输出。

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