公开(公告)号：US09691853B2

公开(公告)日：2017-06-27

申请号：US14600888

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taeho Kim ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/10 ,  H01L29/16 ,  H01L27/12 ,  H01L27/144 ,  H01L29/267 ,  H01L29/778 ,  H01L29/06 ,  H01L27/15 ,  H01L33/00 ,  H01L29/786 ,  H01L33/06 ,  H01L33/34

CPC classification number: H01L29/1033 ,  H01L27/1222 ,  H01L27/1443 ,  H01L27/156 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/778 ,  H01L29/78681 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/1136 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  Y02E10/547

Abstract: According to example embodiments, an electronic device includes channel layer including a graphene layer electrically contacting a quantum dot layer including a plurality of quantum dots, a first electrode and a second electrode electrically connected to the channel layer, respectively, and a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer. A gate insulating layer may be between the gate electrode and the channel layer.

公开(公告)号：US20170117430A1

公开(公告)日：2017-04-27

申请号：US15085100

申请日：2016-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/028 ,  H01L31/032

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US12278261B2

公开(公告)日：2025-04-15

申请号：US17564699

申请日：2021-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euncheol Do ,  Byunghoon Na ,  Kiyoung Lee

IPC: H10B12/00 ,  H01G4/33 ,  H01L49/02

Abstract: Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

公开(公告)号：US12166066B2

公开(公告)日：2024-12-10

申请号：US17370361

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION

Inventor： Kiyoung Lee ,  Kookrin Char ,  Byunghoon Na ,  Hahoon Lee ,  Dowon Song

IPC: H01G4/12 ,  H01G4/30 ,  H01L49/02

Abstract: A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3   wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.

公开(公告)号：US12015073B2

公开(公告)日：2024-06-18

申请号：US17984877

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  C01G35/00 ,  H10B51/00 ,  H10B53/00

CPC classification number: H01L29/516 ,  C01G23/006 ,  C01G35/006 ,  H10B51/00 ,  H10B53/00 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/77 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US11532722B2

公开(公告)日：2022-12-20

申请号：US16779863

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  C01G23/00 ,  H01L27/11585 ,  H01L27/11502 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US11367799B2

公开(公告)日：2022-06-21

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  H01L31/0304 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US11239274B2

公开(公告)日：2022-02-01

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Eunkyu Lee ,  Seongjun Park ,  Kiyoung Lee ,  Jinseong Heo

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264 ,  B82Y15/00

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US11222953B2

公开(公告)日：2022-01-11

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US10680066B2

公开(公告)日：2020-06-09

申请号：US14635576

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/16 ,  H01L29/778 ,  H01L33/26 ,  H01L29/267 ,  H01L29/08 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L45/00 ,  H01L31/028 ,  H01L31/113 ,  H01L29/417 ,  H01L33/04 ,  H01L33/34

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.